IP Library › Granted Patent US 12,424,929
Granted Patent B2
US 12,424,929 · App. 18/305,797 · Granted Sep 23, 2025

Electronic control of protection parameters for a semiconductor switch

Inventors: Muhammad Hussain Alvi (Troy, MI); Junghoon Kim (Ann Arbor, MI); Chunhao J. Lee (Troy, MI); Brian A. Welchko (Oakland Township, MI); Eric Bernard Gach (Clarkston, MI)
Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
H02M1/32B60L3/003H02H5/041H02M1/325B60L2210/42H02M7/53871
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Quick Facts
Patent No.
US 12,424,929
App. No.
18/305,797
Granted
Sep 23, 2025
Kind
B2
Abstract

A system includes an electronic device including a circuit having a semiconductor switch, and a controller configured to control a gate driver connected to the semiconductor switch via a protection circuit. The controller is configured to set a protection parameter including a voltage threshold representing a selected value of a voltage across the semiconductor switch, the protection parameter configured to cause the semiconductor switch to be deactivated in response to an overcurrent condition, the protection parameter selected based on a mathematical model of the semiconductor switch, the mathematical model representing a physical property of at least one of the electronic device and the semiconductor switch.

Claims (28)

1. A system comprising:

an electronic device including a circuit having a semiconductor switch;

a controller configured to control a gate driver connected to the semiconductor switch via a protection circuit, the controller configured to set a protection parameter including a voltage threshold representing a selected value of a voltage across the semiconductor switch, the protection parameter configured to cause the semiconductor switch to be deactivated in response to an overcurrent condition, the protection parameter selected based on a mathematical model of the semiconductor switch, the mathematical model representing a physical property of at least one of the electronic device and the semiconductor switch, wherein the mathematical model includes a physics-based semiconductor model, the semiconductor model prescribing a value of the protection parameter based on a temperature of the semiconductor switch, a phase of current applied to the semiconductor switch for controlling the semiconductor switch, and a ripple current.

2. The system of claim 1 , wherein the electronic device is disposed in a vehicle, and the system is configured to wirelessly transmit the protection parameter to an external location for remote monitoring of the electronic device.

3. The system of claim 1 , wherein the mathematical model includes a thermal model of a junction temperature of the semiconductor switch, and a torque speed model including a torque speed operating point.

4. The system of claim 1 , wherein the controller is configured to update the protection parameter at each of a plurality of switching cycles.

5. The system of claim 1 , wherein the protection parameter includes a blanking time.

6. The system of claim 5 , wherein the controller is configured to select the blanking time by controlling at least one of a charging current and a capacitance of a capacitor.

7. The system of claim 1 , wherein the protection parameter includes a threshold desaturation voltage of the protection circuit.

8. The system of claim 1 , wherein the controller is configured to adjust the voltage threshold by controlling at least one of a charging current, a resistance of a variable resistor and an internal comparator threshold.

9. A method comprising:

controlling a semiconductor switch of an electronic device during a switching cycle by a gate driver connected to the semiconductor switch via a protection circuit;

monitoring a voltage across the semiconductor switch during the switch cycle, and comparing the voltage across the semiconductor switch to a protection parameter, the protection parameter including a voltage threshold representing a selected value of a voltage across the semiconductor switch;

based on an overcurrent condition causing the voltage of the semiconductor switch to exceed the voltage threshold, deactivating the semiconductor switch, wherein the protection parameter is selected based on a mathematical model of the semiconductor switch, the mathematical model representing a physical property of at least one of the electronic device and the semiconductor switch, wherein the mathematical model is a physics-based semiconductor model, the semiconductor model prescribing a value of the protection parameter based on a temperature of the semiconductor switch, a phase of current applied to the semiconductor switch for controlling the semiconductor switch, and a ripple current.

10. The method of claim 9 , wherein the electronic device is disposed in a vehicle, and the mathematical model includes at least one of a torque model and a power inverter loss model.

11. The method of claim 9 , wherein the mathematical model includes a thermal model of a junction temperature of the semiconductor switch, and a torque speed model including a torque speed operating point.

12. The method of claim 9 , further comprising updating the protection parameter at each of a plurality of switching cycles.

13. The method of claim 9 , wherein the protection parameter includes a blanking time, the blanking time selected by controlling at least one of a charging current and a capacitance of a capacitor.

14. The method of claim 9 , wherein the protection parameter includes a threshold desaturation voltage of the protection circuit.

15. The method of claim 9 , wherein the electronic device is disposed in a vehicle, and the method further comprising wirelessly transmitting the protection parameter to an external location for remote monitoring of the electronic device.

16. A system of a vehicle, comprising:

an electronic device including a circuit having a semiconductor switch;

a gate driver connected to the semiconductor switch via a protection circuit; and

a controller configured to control the gate driver and set a protection parameter including a voltage threshold representing a selected value of a voltage across the semiconductor switch, the protection parameter configured to cause the semiconductor switch to be deactivated in response to an overcurrent condition, the protection parameter selected based on a mathematical model of the semiconductor switch, the mathematical model representing a physical property of at least one of the electronic device and the semiconductor switch, wherein the mathematical model is a physics-based semiconductor model, the semiconductor model prescribing a value of the protection parameter based on a temperature of the semiconductor switch, a phase of current applied to the semiconductor switch for controlling the semiconductor switch, and a ripple current.

17. The system of claim 16 , wherein the electronic device is disposed in a vehicle, and the mathematical model includes at least one of a torque model and a power inverter loss model.

18. The system of claim 16 , wherein the mathematical model includes a thermal model of a junction temperature of the semiconductor switch, and a torque speed model including a torque speed operating point.

19. The system of claim 16 , wherein the protection parameter includes a blanking time, and the controller is configured to select the blanking time by controlling at least one of a charging current and a capacitance of a capacitor.

20. The system of claim 16 , wherein the protection parameter includes a threshold desaturation voltage of the protection circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2023
From: ALVI, MUHAMMAD HUSSAIN; KIM, JUNGHOON; LEE, CHUNHAO J.; WELCHKO, BRIAN A.; GACH, ERIC BERNARD
To: GM GLOBAL TECHNOLOGY OPERATIONS LLC
Reel/Frame 063419/0373 →
Continuity (1)
Related Publication 20240356458A1 · Oct 24, 2024
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