Top electrodes and dielectric spacer layers for bulk acoustic wave resonators
Bulk acoustic wave (BAW) resonators and particularly top electrodes with step arrangements for BAW resonators are disclosed. Top electrodes on piezoelectric layers are disclosed that include a border (BO) region with a dual-step arrangement where an inner step and an outer step are formed with increasing heights toward peripheral edges of the top electrode. Dielectric spacer layers may be provided between the outer steps and the piezoelectric layer. Passivation layers are disclosed that extend over the top electrode either to peripheral edges of the piezoelectric layer or that are inset from peripheral edges of the piezoelectric layer. Piezoelectric layers may be arranged with reduced thickness portions in areas that are uncovered by top electrodes. BAW resonators as disclosed herein are provided with high quality factors and suppression of spurious modes while also providing weakened BO modes that are shifted farther away from passbands of such BAW resonators.
1. A bulk acoustic wave (BAW) resonator comprising:
a bottom electrode;
a piezoelectric layer over the bottom electrode;
a top electrode over the piezoelectric layer, the top electrode defining a central region and a border (BO) region that extends about a periphery of the central region, the BO region comprising an outer BO region and an inner BO region that is between the outer BO region and the central region; and
a dielectric spacer layer arranged between the top electrode and the piezoelectric layer at the BO region, the dielectric spacer layer being in contact with the piezoelectric layer under the outer BO region and the inner BO region.
2. The BAW resonator of claim 1 , wherein the dielectric spacer layer comprises silicon dioxide.
3. The BAW resonator of claim 1 , wherein a height profile of the top electrode relative to the piezoelectric layer decreases from the outer BO region to the inner BO region, and the height profile further decreases from the inner BO region to the central region.
4. The BAW resonator of claim 3 , wherein the top electrode further defines an inner region that extends about a periphery of the central region such that the inner region is between the central region and the BO region, wherein the height profile of the top electrode decreases from the inner BO region to the inner region and the height profile of the top electrode increases from the inner region to the central region.
5. The BAW resonator of claim 4 , wherein the inner region is spaced from the inner BO region by a gap portion of the top electrode, wherein the height profile of the top electrode decreases from the inner BO region to the gap portion, and the height profile of the top electrode decreases from the gap portion to the inner region.
6. The BAW resonator of claim 1 , further comprising a substrate and at least one layer below the bottom electrode such that the at least one layer is between the bottom electrode and the substrate.
7. The BAW resonator of claim 1 , wherein the inner BO region is an inner BO ring about the periphery of the central region, and the outer BO region is an outer BO ring about a periphery of the inner BO ring.
8. The BAW resonator of claim 7 , wherein the inner BO ring is a first mass loading portion of the top electrode, and the outer BO ring is a second mass loading portion of the top electrode.
9. The BAW resonator of claim 1 , wherein a lateral dimension of the bottom electrode along a bottom of the piezoelectric layer is greater than a lateral dimension of the top electrode along a top of the piezoelectric layer.
10. The BAW resonator of claim 1 , further comprising a passivation layer over the top electrode.
11. A method of fabricating a bulk acoustic wave (BAW) resonator, the method comprising:
providing a bottom electrode below a piezoelectric layer;
providing a dielectric spacer layer on a portion of the piezoelectric layer such that the piezoelectric layer is between the bottom electrode and the dielectric spacer layer; and
providing a top electrode over the dielectric spacer layer and the piezoelectric layer, the top electrode forming a central region and a border (BO) region that extends about a periphery of the central region, the BO region forming an outer BO region and an inner BO region that is between the outer BO region and the central region, and the dielectric spacer layer being in contact with the piezoelectric layer under the outer BO region and the inner BO region.
12. The method of claim 11 , wherein a height profile of the top electrode relative to the piezoelectric layer decreases from the outer BO region to the inner BO region, and the height profile further decreases from the inner BO region to the central region.
13. The method of claim 11 , wherein the inner BO region is a first mass loading portion of the top electrode, and the outer BO region is a second mass loading portion of the top electrode.
14. The method of claim 11 , wherein the dielectric spacer layer comprises silicon dioxide, silicon nitride, or aluminum nitride.
15. The method of claim 11 , wherein a lateral dimension of the bottom electrode along a bottom of the piezoelectric layer is greater than a lateral dimension of the top electrode along a top of the piezoelectric layer.
16. A wireless device comprising,
one or more bulk acoustic wave (BAW) resonators, wherein at least one of the one or more BAW resonators comprises:
a bottom electrode;
a piezoelectric layer over the bottom electrode;
a top electrode over the piezoelectric layer, the top electrode defining a central region and a border (BO) region that extends about a periphery of the central region, the BO region comprising an outer BO region and an inner BO region that is between the outer BO region and the central region; and
a dielectric spacer layer arranged between the BO region and the piezoelectric layer, the dielectric spacer layer being in contact with the piezoelectric layer under the outer BO region and the inner BO region.
17. The wireless device of claim 16 , wherein the dielectric spacer layer comprises silicon dioxide.
18. The wireless device of claim 16 , wherein a height profile of the top electrode relative to the piezoelectric layer decreases from the outer BO region to the inner BO region, and the height profile further decreases from the inner BO region to the central region.
19. The wireless device of claim 16 , further comprising a substrate and at least one layer below the bottom electrode such that the at least one layer is between the bottom electrode and the substrate.
20. The wireless device of claim 19 , wherein the at least one layer comprises at least one layer of silicon dioxide.