Semiconductor package
A semiconductor package includes a wiring board and a semiconductor element mounted on the wiring board. The wiring board includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring. The metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.
1. A semiconductor package comprising:
a wiring board; and
a semiconductor element mounted on the wiring board;
wherein the wiring board comprises:
a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less;
a metal wiring provided on the surface of the first insulating material layer; and
a second insulating material layer provided to cover the metal wiring, wherein
the metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and
a nickel content rate of the metal layer is 0.25 to 20% by mass.
2. The semiconductor package according to claim 1 , wherein the nickel content rate of the metal layer is 3 to 20% by mass.
3. The semiconductor package according to claim 1 , wherein the nickel content rate of the metal layer is 0.25 to 3% by mass.
4. The semiconductor package according to claim 1 , wherein the first insulating material layer is composed of a cured product of a thermosetting resin composition.
5. The semiconductor package according to claim 1 , wherein the first insulating material layer is composed of a cured product of a photosensitive resin composition.
6. The semiconductor package according to claim 1 , further comprising a support substrate the first insulating layer being formed on,
wherein the support substrate is wafer-shaped and has a diameter of 200 mm, 300 mm or 450 mm.
7. The semiconductor package according to claim 1 , further comprising a support substrate the first insulating layer being formed on,
wherein the support substrate is rectangular panel-shaped and has a side of 300 to 700 mm.
8. The semiconductor package according to claim 1 , wherein the first insulating layer has a thermal expansion coefficient of 80×10 −6 /K or less.