IP Library › Granted Patent US 12,426,168
Granted Patent B2
US 12,426,168 · App. 18/062,739 · Granted Sep 23, 2025

Circuit board structure and method for forming the same

Inventors: Ming-Hao Wu (Taoyuan, TW); Chia-Ching Wang (Taoyuan, TW)
Assignee: UNIMICRON TECHNOLOGY CORP.
H05K3/429H05K1/115H05K2201/09509H05K2203/0207
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Quick Facts
Patent No.
US 12,426,168
App. No.
18/062,739
Granted
Sep 23, 2025
Kind
B2
Abstract

A circuit board structure is provided. The circuit board structure includes a via hole, a conductive layer, and an alternate stacking of a plurality of circuit layers and a plurality of insulating layers. The via hole penetrates through the plurality of circuit layers and the plurality of insulating layers. The lateral ends of the plurality of insulating layers form the sidewall of the via hole. The conductive layer is conformally disposed within the via hole. The conductive layer exposes the first region of the sidewall and covers the second region of the sidewall. The sidewall extends in the longitudinal direction of the via hole and has no misalignments in the radial direction.

Claims (11)

1. A circuit board structure, comprising:

an alternate stacking of a plurality of circuit layers and a plurality of insulating layers, wherein the alternate stacking does not comprise any plating-resist material;

a via hole penetrating through the plurality of circuit layers and the plurality of insulating layers, wherein lateral ends of the plurality of insulating layers form a sidewall of the via hole, wherein the via hole is a blind via with one end covered by an additional insulating layer; and

a conductive layer conformally disposed within the via hole, exposing a first region of the sidewall and covering a second region of the sidewall, wherein the first region of the sidewall has a first-sub region that is in direct contact with the plurality of circuit layers and a second-sub region that is not in direct contact with the plurality of circuit layers, and a material of the first-sub region is the same as a material of the second-sub region,

wherein the sidewall extends in a longitudinal direction of the via hole and has no misalignments in a radial direction,

wherein the first region and the second region are disposed alternately along the longitudinal direction, and a portion of the first region is sandwiched within the second region,

wherein a diameter of the first region of the sidewall of the via hole is substantially equal to a diameter of the second region of the sidewall of the via hole.

2. The circuit board structure as claimed in claim 1 , wherein a portion of the second region is sandwiched within the first region.

3. The circuit board structure as claimed in claim 1 , wherein a portion of the second region is adjacent to an edge between the via hole and an outer surface of the alternate stacking.

4. The circuit board structure as claimed in claim 1 , wherein the conductive layer is electrically connected to at least some of the plurality of circuit layers.

5. The circuit board structure as claimed in claim 1 , wherein a portion of the plurality of circuit layers are exposed at the first region of the sidewall.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2022
From: WU, MING-HAO; WANG, CHIA-CHING
To: UNIMICRON TECHNOLOGY CORP.
Reel/Frame 062027/0350 →
Priority Claims (1)
TW 111137017 · Sep 29, 2022 · national
Continuity (1)
Related Publication 20240114632A1 · Apr 4, 2024
References Cited (16)
US 7337537B1 · Smetana, Jr. · 2008 [cited by examiner]
US 9781844B2 · Iketani · 2017 [cited by examiner]
US 10201085B2 · Iketani · 2019 [cited by applicant]
US 20070246252A1 · Buchwalter · 2007 [cited by examiner]
US 20190159346A1 · Thomas et al. · 2019 [cited by applicant]
US 20200275548A1 · Imayoshi · 2020 [cited by applicant]
US 20210307173A1 · Lenhardt et al. · 2021 [cited by applicant]
US 20220015225A1 · Sinha · 2022 [cited by examiner]
US 20220408553A1 · Takeuchi · 2022 [cited by examiner]
US 20230199958A1 · Trelford · 2023 [cited by examiner]
CN 101861057A · 2010 [cited by applicant]
TW 201626512A · 2016 [cited by applicant]
TW 201940321A · 2019 [cited by applicant]
WO WO2014196911A1 · 2014 [cited by examiner]
WO WO2019188344A1 · 2019 [cited by examiner]
WO 2019/188344 A1; English Translation (Year: 2019). [cited by examiner]