Adjustable de-chucking voltage
Aspects of the present disclosure generally relate to apparatus and methods for an adjustable de-chucking voltage associated with an electrostatically charged substrate in a processing chamber. An example method of de-chucking a substrate disposed in a process chamber includes processing a substrate in a chamber body, the substrate being coupled to a substrate support comprising a chucking electrode. The method further includes monitoring a property associated with a lift pin assembly movable relative to the chucking electrode via an actuator. The method further includes adjusting a first voltage level applied to the chucking electrode in response to the property associated with the lift pin assembly satisfying one or more criteria.
1. A method of de-chucking a substrate disposed in a process chamber, comprising:
processing a substrate in a chamber body, the substrate being coupled to a substrate support comprising a chucking electrode;
monitoring a property associated with a lift pin assembly movable relative to the chucking electrode via an actuator;
adjusting a first voltage level applied to the chucking electrode in response to the property associated with the lift pin assembly satisfying one or more criteria; and
monitoring a second voltage level associated with a heater element of the substrate support, wherein adjusting the first voltage level comprises adjusting the first voltage level based at least in part on the second voltage level.
2. The method of claim 1 , wherein:
monitoring the property comprises monitoring a torque being applied to the lift pin assembly via the actuator; and
the property associated with the chucking electrode satisfies the one or more criteria when the torque is greater than or equal to a threshold.
3. The method of claim 1 , wherein the property comprises:
a displacement of the lift pin assembly relative to the chucking electrode,
a force being applied to the lift pin assembly,
a torque being applied to the lift pin assembly,
a voltage level being applied to the actuator,
a current level being applied to the actuator, or
any combination thereof.
4. The method of claim 1 , wherein the property associated with the lift pin assembly satisfies the one or more criteria when the property is greater than or equal to a threshold.
5. The method of claim 1 , wherein adjusting the first voltage level comprises adjusting the first voltage level until the property is less than or equal to a threshold.
6. The method of claim 1 , further comprising de-chucking the substrate from the substrate support using the lift pin assembly.
7. The method of claim 1 , wherein the substrate comprises aluminum nitride (AlN), silicon oxide (SiO x ), or a combination thereof.
8. A method of de-chucking a substrate disposed in a process chamber, comprising:
processing a substrate in a chamber body, the substrate being coupled to a substrate support comprising a chucking electrode;
monitoring a property associated with a lift pin assembly movable relative to the chucking electrode via an actuator; and
adjusting a first voltage level applied to the chucking electrode in response to the property associated with the lift pin assembly satisfying one or more criteria; and
monitoring a second voltage level associated with a heater element of the substrate support, wherein adjusting the first voltage level comprises:
determining a de-chucking voltage for the substrate based at least in part on the second voltage level; and
adjusting the first voltage level to the de-chucking voltage.
9. A process chamber, comprising:
a lid assembly;
a substrate support disposed within a process volume, wherein the substrate support comprises a chucking electrode, a lift pin assembly, and a heater element, wherein the lift pin assembly is movable relative to the chucking electrode via an actuator;
a power source electrically coupled to the chucking electrode;
a memory; and
a processor coupled to the memory, the processor being configured to:
monitor a property associated with the lift pin assembly,
adjust a first voltage level applied to the chucking electrode via the power source in response to the property associated with the lift pin assembly satisfying one or more criteria,
monitor a second voltage level associated with the heater element of the substrate support, and
adjust the first voltage level based at least in part on the second voltage level.
10. The process chamber of claim 9 , wherein:
to monitor the property, the processor is further configured to monitor a torque being applied to the lift pin assembly via the actuator; and
the property associated with the chucking electrode satisfies the one or more criteria when the torque is greater than or equal to a threshold.
11. The process chamber of claim 9 , wherein the property comprises:
a displacement of the lift pin assembly relative to the chucking electrode,
a force being applied to the lift pin assembly,
a torque being applied to the lift pin assembly,
a voltage level being applied to the actuator,
a current level being applied to the actuator, or
any combination thereof.
12. The process chamber of claim 9 , wherein the property associated with the chucking electrode satisfies the one or more criteria when the property is greater than or equal to a threshold.
13. The process chamber of claim 9 , wherein to adjust the first voltage level, the processor is further configured to adjust the first voltage level until the property is less than or equal to a threshold.
14. A process chamber, comprising:
a lid assembly;
a substrate support disposed within a process volume, wherein the substrate support comprises a chucking electrode, a lift pin assembly, and a heater element, wherein the lift pin assembly is movable relative to the chucking electrode via an actuator;
a power source electrically coupled to the chucking electrode;
a memory; and
a processor coupled to the memory, the processor being configured to:
monitor a property associated with the lift pin assembly,
adjust a first voltage level applied to the chucking electrode via the power source in response to the property associated with the lift pin assembly satisfying one or more criteria;
monitor a second voltage level associated with the heater element of the substrate support;
determine a de-chucking voltage for a substrate based at least in part on the second voltage level; and
adjust the first voltage level to the de-chucking voltage.
15. A process chamber, comprising:
a lid assembly;
a chamber body coupled to the lid assembly by a spacer, the spacer and the chamber body defining a process volume;
a substrate support disposed and movable within the process volume, wherein the substrate support comprises a chucking electrode, a heater element, and a lift pin assembly, wherein the lift pin assembly is movable relative to the chucking electrode via an actuator;
a power source electrically coupled to the chucking electrode;
a memory; and
a processor coupled to the memory, the processor being configured to:
monitor a property associated with the lift pin assembly,
monitor a first voltage level associated with the heater element, and
adjust a second voltage level applied to the chucking electrode via the power source based at least in part on the first voltage level in response to the property associated with the lift pin assembly satisfying one or more criteria.
16. The process chamber of claim 15 , wherein:
the actuator is configured to output a torque being applied to the lift pin assembly;
to monitor the property, the processor is further configured to monitor the torque being applied to the lift pin assembly via the actuator; and
the property associated with the chucking electrode satisfies the one or more criteria when the torque is greater than or equal to a threshold.
17. The process chamber of claim 15 , wherein the processor is further configured to:
determine a de-chucking voltage for a substrate based at least in part on the first voltage level; and
adjust the second voltage level to the de-chucking voltage.
18. The process chamber of claim 15 , wherein to adjust the second voltage level, the processor is further configured to adjust the second voltage level until the property is less than or equal to a threshold.