Semiconductor device
An object of the present invention is to provide a semiconductor device capable of suppressing loss in a switching element at high temperature without increasing radiation noise of the switching element. A semiconductor device includes an IGBT including a gate to which a gate signal is input, a temperature detection element that detects temperature of the IGBT, and a capacitance adjustment unit that is arranged between the gate of the IGBT and a reference potential terminal and that adjusts a capacitance between the gate and an emitter of the IGBT according to a detection temperature detected by the temperature detection element.
1. A semiconductor device comprising:
a switching element including a control signal input terminal where a switching control signal is input;
a temperature detection element configured to detect temperature of the switching element to output a detection temperature; and
a capacitance adjustment unit arranged between the control signal input terminal and a reference potential terminal and configured to adjust a capacitance between a gate and an emitter of the switching element according to the detection temperature, wherein a capacitor is arranged between the capacitance adjustment unit and the reference potential terminal.
2. The semiconductor device according to claim 1 , wherein the capacitance adjustment unit includes a switch circuit configured to disconnect a connection between the control signal input terminal and the capacitor when the detection temperature is equal to or higher than a predetermined comparison temperature, and connects the control signal input terminal and the capacitor when the detection temperature is lower than the comparison temperature.
3. The semiconductor device according to claim 2 , wherein the switch circuit serves to switch to a circuit configuration for discharging electric charge of the capacitor when the detection temperature is equal to or higher than the comparison temperature.
4. The semiconductor device according to claim 2 , wherein the switch circuit includes a disconnection switch provided to be able to disconnect the connection between the control signal input terminal and the capacitor.
5. The semiconductor device according to claim 4 , wherein the disconnection switch disconnects the connection between the control signal input terminal and the capacitor when the detection temperature is equal to or higher than the comparison temperature, and connects the control signal input terminal to the capacitor when the detection temperature is lower than the comparison temperature.
6. The semiconductor device according to claim 4 , wherein the switch circuit includes a connection switch provided to able to discharge the electric charge of the capacitor.
7. The semiconductor device according to claim 6 , wherein the connection switch connects the reference potential terminal to the capacitor when the detection temperature is equal to or higher than the comparison temperature, and disconnects the reference potential terminal from the capacitor when the detection temperature is lower than the comparison temperature.
8. The semiconductor device according to claim 6 , wherein the disconnection switch and the connection switch include a complementary configuration in which the switches are connected in series between the control signal input terminal and the reference potential terminal.
9. The semiconductor device according to claim 6 , wherein the capacitance adjustment unit includes a comparator portion configured to compare a detection voltage input from the temperature detection element and corresponding to the detection temperature with a comparison voltage corresponding to the comparison temperature, in which
when the comparator portion outputs a signal indicating that the detection voltage is equal to or lower than the comparison voltage, the disconnection switch disconnects the connection between the capacitor and the control signal input terminal, and the connection switch connects the capacitor to the reference potential terminal, and
when the comparator portion outputs a signal indicating that the detection voltage is higher than the comparison voltage, the disconnection switch does not disconnect the connection between the capacitor and the control signal input terminal, and the connection switch disconnects the capacitor from the reference potential terminal.
10. The semiconductor device according to claim 2 , comprising:
a plurality of the capacitance adjustment units; and
a plurality of the capacitors respectively associated with the capacitance adjustment units that are any one of the plurality of capacitance adjustment units and that are different from each other,
wherein the plurality of capacitance adjustment units compares the comparison temperatures including mutually different values with the detection temperature to control the switch circuit.
11. The semiconductor device according to claim 1 , wherein the capacitor is a variable capacitance capacitor.