Solid-state imaging device and electronic instrument
To reduce the number of wirings through which transmission and reception are made between chips. The solid-state imaging device includes a first substrate including a pixel array unit in which a plurality of pixels is arranged, each of the plurality of pixels including a photoelectric conversion unit, and the first substrate includes a first wiring through which an imaging pixel signal is transmitted, the imaging pixel signal being read from two or more of the pixels arranged in a first direction in the pixel array unit, a second wiring through which a reset voltage for initializing the first wiring is supplied, and a first switching circuit configured to switch whether or not to short-circuit the first wiring and the second wiring.
1. A solid-state imaging device, comprising:
a first substrate that includes a pixel array unit, wherein
the pixel array unit includes a plurality of pixels,
the plurality of pixels includes a plurality of photoelectric conversion units,
each of the plurality of pixels corresponds to a respective photoelectric conversion unit of the plurality of photoelectric conversion units, and
the first substrate includes:
a plurality of first wirings, wherein
each of the plurality of first wirings is configured to transmit a first imaging pixel signal,
the first imaging pixel signal is read from a first set of at least two pixels,
the first set of at least two pixels is in a first direction in the pixel array unit, and
the plurality of pixels includes the first set of at least two pixels;
a plurality of second wirings that corresponds to the plurality of first wirings, wherein each of the plurality of second wirings is configured to transmit a reset voltage to initialize each of the plurality of the first wirings;
a first switching circuit configured to switch whether or not to short-circuit a first wiring of the plurality of first wirings and a second wiring of the plurality of second wirings;
a plurality of third wirings that corresponds to the plurality of first wirings and the plurality of second wirings, wherein the plurality of third wirings is set at a reference voltage; and
a plurality of second switching circuits configured to switch whether or not to short-circuit the plurality of second wirings and the plurality of third wirings that corresponds to the plurality of second wirings.
2. The solid-state imaging device according to claim 1 , wherein
the plurality of pixels in the pixel array unit is in the first direction and in a second direction,
each of the plurality of the first wirings extends in the first direction,
each of the plurality of the first wirings is at intervals in the second direction,
the first substrate further includes a plurality of first switching circuits,
the plurality of first switching circuits includes the first switching circuit, and
the plurality of first switching circuits is configured to switch whether or not to short-circuit the plurality of first wirings and the plurality of second wirings that corresponds to the plurality of first wirings.
3. The solid-state imaging device according to claim 2 , wherein
one of the plurality of first wirings is connected to each pixel column of the pixel array unit,
the each pixel column includes the first set of at least two pixels in the first direction, and
one of the plurality of first switching circuits and one of the plurality of second switching circuits are connected to one of the plurality of first wirings.
4. The solid-state imaging device according to claim 2 , wherein
the plurality of first wirings is connected to each pixel column of the pixel array unit,
the each pixel column includes the first set of at least two pixels,
the first set of at least two pixels is in the first direction, and
the plurality of first switching circuits and the plurality of second switching circuits are connected to the plurality of first wirings.
5. The solid-state imaging device according to claim 4 , wherein
each of the plurality of first switching circuits and the plurality of second switching circuits is outside an arrangement region of the plurality of pixels, and
the plurality of pixels is on the first substrate.
6. The solid-state imaging device according to claim 2 , wherein
the plurality of first switching circuits includes a plurality of first transistors,
each of the plurality of first transistors is configured to switch whether or not to short-circuit the plurality of first wirings and the plurality of second wirings that corresponds to the plurality of first wirings,
the plurality of second switching circuits includes a plurality of second transistors, and
each of the plurality of second transistors is configured to switch whether or not to short-circuit the plurality of second wirings and the plurality of third wirings that corresponds to the plurality of second wirings.
7. The solid-state imaging device according to claim 2 , wherein
each of the plurality of first switching circuits includes:
a first photoelectric conversion unit of the plurality of photoelectric conversion units;
a first floating diffusion;
a third transistor configured to select one of the plurality of pixels;
a fourth transistor configured to amplify a voltage level of the first floating diffusion; and
a fifth transistor configured to switch whether or not to short-circuit one of the plurality of first wirings and one of the plurality of second wirings, and
each of the plurality of second switching circuits includes:
a second photoelectric conversion unit of the plurality of photoelectric conversion units;
a second floating diffusion;
a sixth transistor configured to select one of the plurality of pixels;
a seventh transistor configured to amplify a voltage level of the second floating diffusion; and
an eighth transistor configured to switch whether or not to short-circuit one of the plurality of second wirings and one of the plurality of the third wirings.
8. The solid-state imaging device according to claim 2 , further comprising circuitry configured to:
generate a drive signal to drive a pixel row of the pixel array unit, wherein
the pixel row includes a second set of at least two pixels of the plurality of pixels,
the second set of at least two pixels is in the second direction, and
the second set of at least two pixels is different from the first set of at least two pixels;
output a first switching control signal to switch control of the plurality of first switching circuits; and
output a second switching control signal to switch control of the plurality of second switching circuits.
9. The solid-state imaging device according to claim 2 , further comprising a differential amplifier, wherein
the pixel array unit includes a reference pixel,
the reference pixel is configured to output a reference pixel signal,
each of the plurality of photoelectric conversion units is configured to generate a pixel signal based on a photoelectric conversion,
the plurality of pixels includes a plurality of source follower circuits,
each of the plurality of pixels is configured to generate the first imaging pixel signal based on the pixel signal,
the plurality of source follower circuits is configured to generate a second imaging pixel signal different from the first imaging pixel signal,
at least one of the plurality of pixels is configured to transmit, in a first imaging mode of the solid-state imaging device, the second imaging pixel signal to the plurality of first wirings,
the differential amplifier is configured to compare the pixel signal and the reference pixel signal to generate a third imaging pixel signal different from the second imaging pixel signal,
at least one of the plurality of pixels is further configured to transmit, in a second imaging mode of the solid-state imaging device, the third imaging pixel signal to the plurality of first wirings, and
the first imaging mode and the second imaging mode are alternatively selected.
10. The solid-state imaging device according to claim 9 , wherein
each of the plurality of first switching circuits, the plurality of second switching circuits, and a plurality of third switching circuits is configured to perform a first switching operation and a second switching operation,
the first switching operation is performed in the first imaging mode,
the second switching operation is performed in the second imaging mode, and
the second switching operation is different from the first switching operation.
11. The solid-state imaging device according to claim 10 , wherein
the plurality of first switching circuits is further configured to interrupt, in the first imaging mode, a connection between the plurality of first wirings and the plurality of second wirings that corresponds to the plurality of first wirings,
the plurality of second switching circuits is configured to short-circuit, in the first imaging mode, the plurality of first wirings and the plurality of third wirings that corresponds to the plurality of first wirings,
the plurality of first switching circuits is further configured to short-circuit, in the second imaging mode, the plurality of first wirings and the plurality of second wirings that corresponds to the plurality of first wirings, and
the plurality of second switching circuits is further configured to interrupt, in the second imaging mode, a connection between the plurality of first wirings and the plurality of third wirings that corresponds to the plurality of first wirings.
12. A solid-state imaging device, comprising:
a first substrate that includes a pixel array unit, wherein
the pixel array unit includes a plurality of pixels,
the plurality of pixels includes a plurality of photoelectric conversion units,
each of the plurality of pixels corresponds to a respective photoelectric conversion unit of the plurality of photoelectric conversion units, and
the pixel array unit is configured to output a first imaging pixel signal; and
a second substrate stacked on the first substrate, wherein
the second substrate is configured to perform a signal processing process on the first imaging pixel signal,
the first substrate further includes:
a plurality of first wirings that does not interfere with a circuit operation at a time of short-circuit of each of the plurality of first wirings; and
a first bonding part that is less in number than the plurality of first wirings, wherein the first bonding part is electrically connected to the plurality of first wirings, and
the second substrate includes:
a plurality of second wirings that does not interfere with the circuit operation at a time of short-circuit of each of the plurality of second wirings; and
a second bonding part that is equal in number to the first bonding part, wherein
the second bonding part is bonded to the first bonding part, and
the second bonding part is electrically connected to the plurality of second wirings.
13. The solid-state imaging device according to claim 12 , wherein
the plurality of pixels is in a first direction and in a second direction,
the plurality of pixels is on the first substrate,
the solid-state imaging device further comprises circuitry configured to generate a drive signal to drive a pixel row of the pixel array unit,
the pixel row includes a set of at least two pixels of the plurality of pixels,
the set of at least two pixels is in the second direction, and
the circuitry includes a first output wiring that is electrically connected to the first bonding part and the second bonding part.
14. The solid-state imaging device according to claim 13 , wherein
the circuitry is in the second substrate, and
the first substrate further includes:
a first connection region in the first direction, wherein
the first connection region includes the first bonding part and a third bonding part, and
the third bonding part is connected to the circuitry; and
a second connection region in the second direction, wherein
the second connection region includes a fourth bonding part,
the fourth bonding part is between the first substrate and the second substrate, and
the fourth bonding part is configured to:
transmit a signal; and
receive the signal.
15. The solid-state imaging device according to claim 14 , wherein
the circuitry includes first circuitry and second circuitry,
each of the first circuitry and the second circuitry is in the second direction,
the first circuitry includes a second output wiring,
the second circuitry includes a third output wiring,
the first bonding part is electrically connected to the first circuitry through the second output wiring, and
the third bonding part is electrically connected to the second circuitry through the third output wiring.
16. The solid-state imaging device according to claim 14 , wherein
the second connection region includes two connection regions,
the two connection regions are on the first substrate in the second direction, and
the two connection regions include the first bonding part and the third bonding part.
17. The solid-state imaging device according to claim 12 , further comprising a differential amplifier, wherein
the pixel array unit includes a reference pixel,
the reference pixel is configured to output a reference pixel signal,
each of the plurality of photoelectric conversion units is configured to generate a pixel signal based on a photoelectric conversion,
the plurality of pixels includes a plurality of source follower circuits,
each of the plurality of pixels is configured to generate the first imaging pixel signal based on the pixel signal,
the plurality of source follower circuits is configured to generate a second imaging pixel signal different from the first imaging pixel signal,
at least one of the plurality of pixels is configured to transmit, in a first imaging mode of the solid-state imaging device, the second imaging pixel signal to the plurality of first wirings,
the differential amplifier is configured to compare the pixel signal and the reference pixel signal to generate a third imaging pixel signal different from the second imaging pixel signal,
at least one of the plurality of pixels is further configured to transmit, in a second imaging mode of the solid-state imaging device, the third imaging pixel signal to the plurality of first wirings,
the first imaging mode and the second imaging mode are alternatively selected,
the plurality of first wirings is one of
a plurality of wirings set at a first reference voltage, or
a plurality of wirings configured to equalize a reference voltage level in the first substrate and a reference voltage in the second substrate,
the equalization of the reference voltage is in the second imaging mode at a specific timing,
the plurality of first wirings is connected to the differential amplifier in the second imaging mode, and
the plurality of first wirings is disconnected from the differential amplifier in the first imaging mode.
18. An electrical instrument, comprising:
a solid-state imaging device configured to output an imaging pixel signal; and
a signal processing device configured to perform a signal processing process based on the imaging pixel signal, wherein
the solid-state imaging device includes a first substrate,
the first substrate includes a pixel array unit,
the pixel array unit includes a plurality of pixels,
each of the plurality of pixels includes a photoelectric conversion unit, and
the first substrate includes:
a plurality of first wirings, wherein
each of the plurality of first wirings is configured to transmit the imaging pixel signal,
the imaging pixel signal is read from a set of at least two pixels of the plurality of pixels,
the set of at least two pixels is in a first direction in the pixel array unit, and
the plurality of pixel includes the set of at least two pixels;
a plurality of second wirings, wherein each of the plurality of second wirings is configured to transmit a reset voltage to initialize each of the plurality of the first wirings;
a first switching circuit configured to switch whether or not to short-circuit a first wiring of the plurality of first wirings and a second wiring of the plurality of second wirings;
a plurality of third wirings that corresponds to the plurality of first wirings and the plurality of second wirings, wherein the plurality of third wirings is set at a reference voltage; and
a plurality of second switching circuits configured to switch whether or not to short-circuit the plurality of second wirings and the plurality of third wirings that corresponds to the plurality of second wirings.
19. An electronic instrument, comprising:
a solid-state imaging device configured to output an imaging pixel signal; and
a signal processing device configured to perform a first signal processing process based on the imaging pixel signal, wherein
the solid-state imaging device includes:
a first substrate that includes a pixel array unit, wherein
the pixel array unit includes a plurality of pixels,
each of the plurality of pixels includes a photoelectric conversion unit, and
the pixel array unit is configured to output the imaging pixel signal; and
a second substrate stacked on the first substrate, wherein
the second substrate is configured to perform a second signal processing process on the imaging pixel signal,
the first substrate further includes:
a plurality of first wirings that does not interfere with a circuit operation at a time of short-circuit of each of the plurality of first wirings; and
a first bonding part that is less in number than the plurality of first wirings, wherein the first bonding part is electrically connected to the plurality of first wirings, and
the second substrate includes:
a plurality of second wirings that does not interfere with the circuit operation at a time of short-circuit of each of the plurality of second wirings; and
a second bonding part that is equal in number to the first bonding part, wherein
the second bonding part is bonded to the first bonding part, and
the second bonding part is electrically connected to the plurality of second wirings.