Granted Patent B2

US 12,432,980 · App. 17/781,773 · Granted Sep 30, 2025

Inventors: Lizhong Wang (Beijing, CN); Guangcai Yuan (Beijing, CN); Ce Ning (Beijing, CN); Nianqi Yao (Beijing, CN); Hehe Hu (Beijing, CN); Liping Lei (Beijing, CN); Dongfang Wang (Beijing, CN); Dapeng Xue (Beijing, CN); Shuilang Dong (Beijing, CN); Zhengliang Li (Beijing, CN)

Assignee: BOE TECHNOLOGY GROUP CO., LTD.

H10D30/6755H10D30/6739H10D30/6757

Abstract

Claims (31)

1. An oxide thin film transistor, comprising:

a base substrate;

an oxide semiconductor layer provided on the base substrate, and

an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate;

wherein the insulating layer is made of oxide; the insulating layer comprises a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer;

the insulating layer further comprises a third insulating layer, the third insulating layer is provided on a side of the first insulating layer close to the base substrate;

the oxide semiconductor layer and the insulating layer are in contact with each other in a region between a source electrode and a drain electrode;

a gate electrode is provided between a layer where the source electrode and the drain electrode are located and the oxide semiconductor layer; the insulating layer further comprises a fourth insulating layer provided between the first insulating layer and the second insulating layer; and the gate electrode is provided between the fourth insulating layer and the first insulating layer.

2. The oxide thin film transistor according to claim 1 , wherein the oxide semiconductor layer is a metal oxide semiconductor layer, and the insulating layer is made of non-metallic oxide.

3. The oxide thin film transistor according to claim 1 , wherein materials of the first insulating layer and the second insulating layer at least comprise O atom and Si atom.

4. The oxide thin film transistor according to claim 1 , wherein a density of the third insulating layer is greater than the density of the first insulating layer; and the third insulating layer is in contact with the oxide semiconductor layer.

5. The oxide thin film transistor according to claim 4 , wherein a difference between an etching rate of the first insulating layer and an etching rate of the second insulating layer is 20 Å/s to 40 Å/s; and a difference between the etching rate of the first insulating layer and an etching rate of the third insulating layer is 10 Å/s to 20 Å/s.

6. The oxide thin film transistor according to claim 4 , wherein an etching solution used for etching the first insulating layer, the second insulating layer and the third insulating layer is a mixed solution of NH 3 F and HF; in the mixed solution of NH 3 F and HF, mass percentages of NH 3 F and HF are respectively 29.8% to 30.2% and 5.9% to 6.1%.

7. The oxide thin film transistor according to claim 4 , wherein under a temperature condition of 200° C. to 350° C., an oxygen release amount of the second insulating layer, the first insulating layer and the third insulating layer which are stacked is less than a sum of oxygen release amounts of the second insulating layer, the first insulating layer and the third insulating layer as single layers within a same temperature range.

8. The oxide thin film transistor according to claim 1 , wherein the oxide semiconductor layer comprises a first oxide semiconductor layer and a second oxide semiconductor layer which are stacked; a density of the second oxide semiconductor layer is greater than a density of the first oxide semiconductor layer; and the second oxide semiconductor layer is farther away from the base substrate than the first oxide semiconductor layer.

9. The oxide thin film transistor according to claim 1 , wherein the insulating layer further comprises a fifth insulating layer provided between the first insulating layer and the fourth insulating layer; a density of the fifth insulating layer is greater than a density of the first insulating layer; and both a material of the fifth insulating layer and a material of the first insulating layer comprise Si and O.

10. The oxide thin film transistor according to claim 1 , wherein a difference between an etching rate of the first insulating layer and an etching rate of the second insulating layer is 20 Å/s to 40 Å/s.

11. A display device, comprising the oxide thin film transistor according to claim 1 .

12. A preparation method of an oxide thin film transistor, comprising:

providing a base substrate;

forming an oxide semiconductor layer on the base substrate;

forming a first insulating layer on a side of the oxide semiconductor layer away from the base substrate; and

forming a second insulating layer on a side of the first insulating layer away from the base substrate;

forming a third insulating layer on a side of the first insulating layer close to the base substrate;

forming a fourth insulating layer between the first insulating layer and the second insulating layer;

wherein a density of the second insulating layer is greater than a density of the first insulating layer; the oxide semiconductor layer and the third insulating layer are in contact with each other in a region between a source electrode and a drain electrode, a gate electrode is formed between a layer where the source electrode and the drain electrode are located and the oxide semiconductor layer, and the gate electrode is provided between the fourth insulating layer and the first insulating layer.

13. The preparation method according to claim 12 , a density of the third insulating layer is greater than the density of the first insulating layer.

14. The preparation method according to claim 12 , wherein the forming an oxide semiconductor layer comprises:

applying a first oxide semiconductor layer thin film and performing a patterning process to form the first oxide semiconductor layer;

applying a second oxide semiconductor layer thin film on the first oxide semiconductor layer and performing a patterning process to form a second oxide semiconductor layer;

wherein a density of the second oxide semiconductor layer is greater than a density of the first oxide semiconductor layer.

Assignments (1)

Continuity (1)

References Cited (60)