Spin-orbit readout using transition metal dichalcogenides and proximitized graphene
In one embodiment, an integrated circuit die includes: a first layer comprising a magnetoelectric material; a second layer comprising a monolayer transition metal dichalcogenide (TMD); a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy; a first conductive trace coupled to the first layer; and a second conductive trace coupled to the magnet.
1. An integrated circuit die, comprising:
a first layer comprising a magnetoelectric material;
a second layer comprising a monolayer transition metal dichalcogenide (TMD);
a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy;
a first conductive trace coupled to the first layer; and
a second conductive trace coupled to the magnet.
2. The integrated circuit die of claim 1 , wherein the second layer has two output legs, wherein the output legs extend from different sides of the second layer and are substantially perpendicular to a remainder of the second layer.
3. The integrated circuit die of claim 2 , wherein:
the first conductive trace is further coupled to an input voltage terminal;
the second conductive trace is further coupled to a supply voltage terminal;
the second layer is coupled to ground; and
the output legs are coupled to differential output voltage terminals.
4. The integrated circuit die of claim 3 , wherein:
the output legs comprise a first output leg and a second output leg;
the differential output voltage terminals comprise a positive output voltage terminal and a negative output voltage terminal; and
the first output leg is coupled to the positive output voltage terminal and the second output leg is coupled to the negative output voltage terminal.
5. The integrated circuit die of claim 3 , wherein:
the first layer is to convert an input charge current on the first conductive trace into a spin current on the magnet; and
the second layer is to convert the spin current on the magnet into an output charge current on the output legs.
6. The integrated circuit die of claim 1 , wherein the monolayer TMD comprises a p-type monolayer TMD.
7. The integrated circuit die of claim 1 , wherein the monolayer TMD comprises:
tungsten and selenium; or
tungsten and sulfur.
8. The integrated circuit die of claim 1 , wherein the magnet comprises:
cobalt, iron, boron, magnesium, and oxygen;
cobalt and platinum;
cobalt and palladium;
cobalt and nickel; or
gallium and tellurium.
9. The integrated circuit die of claim 1 , wherein the magnetoelectric material comprises:
bismuth, iron, and oxygen;
lanthanum, bismuth, iron, and oxygen;
lutetium, iron, and oxygen;
bismuth, titanium, and oxygen;
terbium, manganese, and oxygen;
iron and gallium;
terbium, dysprosium, and iron;
iron and rhodium;
chromium and oxygen; or
iron, tellurium, and oxygen.
10. The integrated circuit die of claim 1 , further comprising a magnetoelectric spin-orbit (MESO) device, wherein the MESO device comprises the first layer, the second layer, the magnet, the first conductive trace, and the second conductive trace.
11. An electronic device, comprising:
processing circuitry;
memory circuitry; or
communication circuitry;
wherein the processing circuitry, the memory circuitry, or the communication circuitry comprises one or more magnetoelectric spin-orbit (MESO) devices, wherein individual MESO devices comprise:
a first layer comprising a magnetoelectric material;
a second layer comprising a monolayer transition metal dichalcogenide (TMD);
a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy;
a first conductive trace coupled to the first layer; and
a second conductive trace coupled to the magnet.
12. The electronic device of claim 11 , wherein the second layer has two output legs, wherein the output legs extend from different sides of the second layer and are substantially perpendicular to a remainder of the second layer.
13. The electronic device of claim 12 , wherein:
the first conductive trace is further coupled to an input voltage terminal;
the second conductive trace is further coupled to a supply voltage terminal;
the second layer is coupled to ground; and
the output legs are coupled to differential output voltage terminals.
14. The electronic device of claim 11 , wherein the monolayer TMD comprises a p-type monolayer TMD.
15. The electronic device of claim 14 , wherein the p-type monolayer TMD comprises:
tungsten and selenium; or
tungsten and sulfur.
16. The electronic device of claim 11 , wherein:
the magnet comprises:
cobalt, iron, boron, magnesium, and oxygen;
cobalt and platinum;
cobalt and palladium;
cobalt and nickel; or
gallium and tellurium; and
the magnetoelectric material comprises:
bismuth, iron, and oxygen;
lanthanum, bismuth, iron, and oxygen;
lutetium, iron, and oxygen;
bismuth, titanium, and oxygen;
terbium, manganese, and oxygen;
iron and gallium;
terbium, dysprosium, and iron;
iron and rhodium;
chromium and oxygen; or
iron, tellurium, and oxygen.
17. A method of fabricating a magnetoelectric spin-orbit device, comprising:
forming a first conductive trace;
forming a first layer above the first conductive trace, wherein the first layer comprises a magnetoelectric material;
forming a magnet above the first layer, wherein the magnet has perpendicular magnetic anisotropy;
forming a second layer above the magnet, wherein the second layer comprises a monolayer transition metal dichalcogenide (TMD); and
forming a second conductive trace above the magnet.
18. The method of claim 17 , wherein forming the second layer above the magnet comprises:
forming a body of the second layer above the magnet; and
forming two output legs on different sides of the body, wherein the output legs are substantially perpendicular to the body.
19. The method of claim 17 , wherein the monolayer TMD comprises a p-type monolayer TMD.
20. The method of claim 19 , wherein the p-type monolayer TMD comprises:
tungsten and selenium; or
tungsten and sulfur.