Indium precursors for vapor depositions
Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 μ-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.
1. A method for forming an indium(III)-containing film on a substrate, the method comprising the steps of:
exposing the substrate to a vapor of a film forming composition that contains an indium(III)-containing precursor; and
depositing at least part of the indium(III)-containing precursor onto the substrate to form the indium(III)-containing film on the substrate through a vapor deposition process,
wherein the indium(III)-containing precursor is selected from
2. The method of claim 1 , wherein the vapor deposition process is an ALD or a CVD process.
3. The method of claim 1 , further comprising the step of exposing the substrate to a co-reactant.
4. The method of claim 3 , wherein the co-reactant is selected from O 3 , O 2 , H 2 O, NO, N 2 O, NO 2 , H 2 O 2 , O radicals and combinations thereof.
5. The method of claim 3 , wherein the co-reactant is selected from NH 3 , NO, N 2 O, hydrazines, N 2 plasma, N 2 /H 2 plasma, NH 3 plasma, amines and combinations thereof.
6. The method of claim 1 , wherein the indium(III)-containing film is an indium oxide film, or a binary, ternary and quaternary indium alloy film.
7. The method of claim 1 , wherein the indium(III)-containing film is InGaAs, In x O y (x=0.5 to 1.5, y=0.5 to 1.5), InSnO (ITO), InGaZnO (IGZO), InN, InP, InAs, InSb, In 2 S 3 , or In(OH) 3 .
8. A method for forming an indium(III)-containing film on a substrate, the method comprising the steps of:
forming a chemisorbed and/or physisorbed film of an indium(III)-containing precursor on the surface of the substrate, wherein the indium(III)-containing precursor is selected from
9. The method of claim 8 , further comprising the step of chemically reacting the chemisorbed and/or physisorbed film comprising the indium(III)-containing precursor with a co-reactant.
10. The method of claim 9 , wherein the co-reactant is selected from O 3 , O 2 , H 2 O, NO, N 2 O, NO 2 , H 2 O 2 , O radicals and combinations thereof.
11. The method of claim 9 , wherein the co-reactant is selected from NH 3 , NO, N 2 O, hydrazines, N 2 plasma, N 2 /H 2 plasma, NH 3 plasma, amines and combinations thereof.