Imaging lens assembly, camera module and electronic device
An imaging lens assembly includes a first optical element and a low-reflection layer. The first optical element has a central opening, and includes a first surface, a second surface and a first outer diameter surface. The first outer diameter surface is connected to the first surface and the second surface. The low-reflection layer is located on at least one of the first surface and the second surface, and includes a carbon black layer, a nano-microstructure and a coating layer. The nano-microstructure is directly contacted with and connected to the carbon black layer, and the nano-microstructure is farther from the first optical element than the carbon black layer from the first optical element. The coating layer is directly contacted with and connected to the nano-microstructure, and the coating layer is farther from the first optical element than the nano-microstructure from the first optical element.
1. An imaging lens assembly, comprising:
an optical element, which is for accommodating at least one optical lens element, comprising:
a first surface facing towards one side of an object side and an image side of the imaging lens assembly; and
a second surface facing towards the other side of the object side and the image side of the imaging lens assembly; and
a low-reflection layer located on at least one of the first surface and the second surface, and comprising:
a carbon black layer, an appearance thereof being black, and directly contacted with and connected to the at least one of the first surface and the second surface;
a nano-microstructure, being a porous structure form, directly contacted with and connected to the carbon black layer, and the nano-microstructure farther from the optical element than the carbon black layer from the optical element; and
a coating layer directly contacted with and connected to the nano-microstructure, and the coating layer farther from the optical element than the nano-microstructure from the optical element;
wherein a reflectivity of the low-reflection layer at a wavelength of 400 nm is R40, a reflectivity of the low-reflection layer at a wavelength of 800 nm is R80, and the following conditions are satisfied:
R40≤0.40%; and
R80≤0.40%.
2. The imaging lens assembly of claim 1 , wherein a reflectivity of the low-reflection layer at a wavelength of 380 nm is R38, and the following condition is satisfied:
R38≤0.40%.
3. The imaging lens assembly of claim 2 , wherein the reflectivity of the low-reflection layer at the wavelength of 380 nm is R38, and the following condition is satisfied:
R38≤0.30%.
4. The imaging lens assembly of claim 3 , wherein the reflectivity of the low-reflection layer at the wavelength of 380 nm is R38, and the following condition is satisfied:
R38≤0.20%.
5. The imaging lens assembly of claim 1 , wherein a grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
5 nm≤GP≤200 nm.
6. The imaging lens assembly of claim 5 , wherein the grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
22 nm≤GP≤200 nm.
7. The imaging lens assembly of claim 5 , wherein the grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
10 nm≤GP≤130 nm.
8. The imaging lens assembly of claim 7 , wherein the grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
22 nm≤GP≤95 nm.
9. The imaging lens assembly of claim 1 , wherein a reflectivity of the low-reflection layer at a wavelength of 680 nm is R68, and the following condition is satisfied:
R68≤0.40%.
10. The imaging lens assembly of claim 9 , wherein the reflectivity of the low-reflection layer at the wavelength of 680 nm is R68, and the following condition is satisfied:
R68≤0.30%.
11. The imaging lens assembly of claim 10 , wherein the reflectivity of the low-reflection layer at the wavelength of 680 nm is R68, and the following condition is satisfied:
R68≤0.20%.
12. The imaging lens assembly of claim 1 , wherein the reflectivity of the low-reflection layer at the wavelength of 400 nm is R40, the reflectivity of the low-reflection layer at the wavelength of 800 nm is R80, and the following conditions are satisfied:
R40≤0.30%; and
R80≤0.30%.
13. The imaging lens assembly of claim 12 , wherein the reflectivity of the low-reflection layer at the wavelength of 400 nm is R40, the reflectivity of the low-reflection layer at the wavelength of 800 nm is R80, and the following conditions are satisfied:
R40≤0.20%; and
R80≤0.20%.
14. The imaging lens assembly of claim 1 , wherein the coating layer is made of a silicon oxide.
15. The imaging lens assembly of claim 1 , wherein the coating layer is made of a metal oxide.
16. The imaging lens assembly of claim 1 , wherein the coating layer is made of a titanic oxide.
17. A camera module, comprising:
the imaging lens assembly of claim 1 .
18. An electronic device, comprising:
the camera module of claim 17 ; and
an image sensor disposed on an image surface of the camera module.
19. A camera module, comprising:
an imaging lens assembly, comprising:
a first optical element, comprising:
a first surface facing towards one side of an object side and an image side of the imaging lens assembly; and
a second surface facing towards the other side of the object side and the image side of the imaging lens assembly;
a low-reflection layer located on at least one of the first surface and the second surface, and comprising:
a carbon black layer, an appearance thereof being black, and directly contacted with and connected to the at least one of the first surface and the second surface;
a nano-microstructure, being a porous structure form, directly contacted with and connected to the carbon black layer, and the nano-microstructure farther from the first optical element than the carbon black layer from the first optical element; and
a coating layer directly contacted with and connected to the nano-microstructure, and the coating layer farther from the first optical element than the nano-microstructure from the first optical element; and
a second optical element, which is for accommodating at least one optical lens element, the second optical element and the first optical element assembled to each other along a direction parallel to an optical axis, and the first optical element facing towards the second optical element;
wherein a reflectivity of the low-reflection layer at a wavelength of 400 nm is R40, a reflectivity of the low-reflection layer at a wavelength of 800 nm is R80, and the following conditions are satisfied:
R40≤0.40%; and
R80≤0.40%.
20. The camera module of claim 19 , wherein a reflectivity of the low-reflection layer at a wavelength of 380 nm is R38, and the following condition is satisfied:
R38≤0.40%.
21. The camera module of claim 20 , wherein the reflectivity of the low-reflection layer at the wavelength of 380 nm is R38, and the following condition is satisfied:
R38≤0.30%.
22. The camera module of claim 21 , wherein the reflectivity of the low-reflection layer at the wavelength of 380 nm is R38, and the following condition is satisfied:
R38≤0.20%.
23. The camera module of claim 19 , wherein a grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
5 nm≤GP≤200 nm.
24. The camera module of claim 23 , wherein the grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
22 nm≤GP≤200 nm.
25. The camera module of claim 23 , wherein the grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
10 nm≤GP≤130 nm.
26. The camera module of claim 25 , wherein the grain pitch of the nano-microstructure is GP, and the following condition is satisfied:
22 nm≤GP≤95 nm.
27. The camera module of claim 19 , wherein a reflectivity of the low-reflection layer at a wavelength of 680 nm is R68, and the following condition is satisfied:
R68≤0.40%.
28. The camera module of claim 27 , wherein the reflectivity of the low-reflection layer at the wavelength of 680 nm is R68, and the following condition is satisfied:
R68≤0.30%.
29. The camera module of claim 28 , wherein the reflectivity of the low-reflection layer at the wavelength of 680 nm is R68, and the following condition is satisfied:
R68≤0.20%.
30. The camera module of claim 19 , wherein the reflectivity of the low-reflection layer at the wavelength of 400 nm is R40, the reflectivity of the low-reflection layer at the wavelength of 800 nm is R80, and the following conditions are satisfied:
R40≤0.30%; and
R80≤0.30%.
31. The camera module of claim 30 , wherein the reflectivity of the low-reflection layer at the wavelength of 400 nm is R40, the reflectivity of the low-reflection layer at the wavelength of 800 nm is R80, and the following conditions are satisfied:
R40≤0.20%; and
R80≤0.20%.
32. The camera module of claim 19 , wherein the coating layer is made of a silicon oxide.
33. The camera module of claim 19 , wherein the coating layer is made of a metal oxide.
34. The camera module of claim 19 , wherein the coating layer is made of a titanic oxide.