Apparatus and method of manufacturing a semiconductor device
To reduce the occurrence of current alarms in a semiconductor etching or deposition process, a controller determines an offset in relative positions of a cover ring and a shield over a wafer within a vacuum chamber. The controller provides a position alarm and/or adjusts the position of the cover ring or shield when the offset is greater than a predetermined value or outside a range of acceptable values.
1. An apparatus, comprising:
a chamber;
a wafer support stage inside the chamber for supporting a wafer;
a shield disposed over the wafer support stage, the shield having a first opening exposing at least a portion of the wafer support stage;
a cover ring disposed over the shield, the cover ring having a second opening exposing the portion of the wafer support stage;
a position sensor for determining whether the shield and the cover ring are aligned such that a radial offset of the cover ring with respect to the shield is less than an established value, wherein the established value is between 0 millimeters (mm) and 0.3 mm, and a signal from the position sensor triggers an alarm when the radial offset is greater than the established value;
a position adjustment mechanism; and
a controller programmed to:
determine the radial offset using the position sensor;
compare the radial offset to the established value stored in an electronic memory; and
instruct the position adjustment mechanism to adjust a position of at least one of the shield and the cover ring when the radial offset is greater than the established value.
2. The apparatus of claim 1 , wherein the position sensor is configured to determine whether the shield and the cover ring are aligned by measuring a distance between an outer periphery of the shield and an edge of the second opening.
3. The apparatus of claim 1 , wherein the controller is further programmed to instruct the position adjustment mechanism to re-align the shield and the cover ring based on the radial offset determined by the position sensor.
4. The apparatus of claim 1 , where the apparatus is at least one of a material deposition apparatus and an etching apparatus.
5. The apparatus of claim 1 , where the apparatus is a physical vapor deposition apparatus.
6. The apparatus of claim 1 , further comprising a deposition ring disposed between the cover ring and the wafer support stage within the chamber.
7. The apparatus of claim 6 , wherein the position sensor is configured to further determine whether the deposition ring and at least one of the shield and the cover ring are aligned such that the radial offset is less than the established value.
8. A deposition apparatus, comprising:
a vacuum chamber;
an electrostatic chuck disposed inside the vacuum chamber;
a shield having a first opening exposing a portion of the electrostatic chuck disposed over the electrostatic chuck;
a cover ring having a second opening exposing the portion of the electrostatic chuck disposed over the shield;
a position sensor; and
a controller programmed to:
control the position sensor to determine relative positions of the shield with respect to the cover ring, of the cover ring with respect to the electrostatic chuck, and of the shield with respect to the electrostatic chuck;
determine whether offsets in alignment of the shield with respect to the cover ring, of the cover ring with respect to the electrostatic chuck, and of the shield with respect to the electrostatic chuck are within a tolerance range, wherein the tolerance range is between 0 millimeters (mm) and 0.3 mm; and
adjust a position of the shield, cover ring, or the electrostatic chuck when the offsets in alignment of the shield with respect to the cover ring, of the cover ring with respect to the electrostatic chuck, and of the shield with respect to the electrostatic chuck are not within the tolerance range.
9. The deposition apparatus of claim 8 , wherein the position sensor is configured to determine whether the shield and the cover ring are aligned by measuring a distance between an outer periphery of the shield and an edge of the second opening.
10. The deposition apparatus of claim 9 , further comprising a deposition ring disposed between the cover ring and the electrostatic chuck within the vacuum chamber.
11. The deposition apparatus of claim 10 , wherein the position sensor is further configured to determine whether the deposition ring and at least one of the shield and the cover ring are aligned such that the offsets are less than an established value.
12. The deposition apparatus of claim 11 , wherein the position sensor is further configured to generate a signal to trigger an alarm when the offsets are greater than the established value.
13. The deposition apparatus of claim 8 , further comprising an adjustment mechanism controlled by the controller for re-aligning the shield and the cover ring based on the offsets determined by the position sensor.
14. The deposition apparatus of claim 8 , wherein the deposition apparatus is a physical vapor deposition apparatus.
15. A deposition apparatus, comprising:
a vacuum chamber;
a wafer support stage disposed inside the vacuum chamber;
a shield having a first opening exposing a portion of an electrostatic chuck disposed over the wafer support stage;
a cover ring having a second opening exposing the portion of the electrostatic chuck disposed over the shield;
a position sensor;
a position adjustment mechanism; and
a controller programmed to:
determine an offset in a relative position of the cover ring with respect to the shield using the position sensor;
determine whether the offset is within a tolerance range, wherein the tolerance range is between 0 millimeters (mm) and 0.3 mm; and
control the position adjustment mechanism to correct a position of at least one of the shield and the cover ring when the offset is outside the tolerance range.
16. The deposition apparatus of claim 15 , wherein the position sensor is configured to determine whether the shield and the cover ring are aligned by measuring a distance between an outer periphery of the shield and an edge of the second opening.
17. The deposition apparatus of claim 16 , further comprising a deposition ring disposed between the cover ring and the wafer support stage within the vacuum chamber.
18. The deposition apparatus of claim 17 , wherein the position sensor is further configured to determine whether the deposition ring and at least one of the shield and the cover ring are aligned such that the offset is less than an established value.
19. The deposition apparatus of claim 18 , wherein the position sensor is further configured to generate a signal to trigger an alarm when the offset is greater than the established value.
20. The deposition apparatus of claim 15 , wherein the deposition apparatus is a physical vapor deposition apparatus.