IP Library › Granted Patent US 12,438,068
Granted Patent B2
US 12,438,068 · App. 17/577,879 · Granted Oct 7, 2025

Stacked module arrangement

Inventors: Peter Luniewski (Poing, DE); Ivan Nikitin (Regensburg, DE); Bernd Schmoelzer (Radenthein, AT)
Assignee: Infineon Technologies Austria AG
H01L23/49568H01L23/055H01L23/3114H01R12/585H01R12/7064H05K2201/1059
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Quick Facts
Patent No.
US 12,438,068
App. No.
17/577,879
Granted
Oct 7, 2025
Kind
B2
Abstract

A stacked module arrangement includes: a first molded electronic module; a second molded electronic module; and an interface by which the first molded electronic module and the second molded electronic module are physically and electrically connected to one another in a stacked configuration. The first molded electronic module is a power electronic module having a maximum breakdown voltage of at least 40V and a maximum DC current of at least 10 A.

Claims (27)

1. A stacked module arrangement, comprising:

a first molded electronic module;

a second molded electronic module; and

an interface by which the first molded electronic module and the second molded electronic module are physically and electrically connected to one another in a stacked configuration,

wherein the first molded electronic module is a power electronic module having a maximum breakdown voltage of at least 40V and a maximum DC current of at least 10 A, and

wherein the interface is a press-fit interface that comprises a plurality of press-fit connectors protruding through a molded body of the first molded electronic module and received by a corresponding plurality of openings in a molded body of the second molded electronic module.

2. The stacked module arrangement of claim 1 , wherein at least some of the press-fit connectors extend through the molded body of the second molded electronic module to provide a connection interface at a side of the second molded electronic module facing away from the first molded electronic module.

3. The stacked module arrangement of claim 2 , further comprising one or more bus bars connected to the connection interface.

4. The stacked module arrangement of claim 2 , further comprising a circuit board connected to the connection interface.

5. The stacked module arrangement of claim 1 , further comprising a circuit board interposed between the first molded electronic module and the second molded electronic module.

6. The stacked module arrangement of claim 5 , wherein at least some of the press-fit connectors extend through the circuit board and into a molded body of the second molded electronic module.

7. The stacked module arrangement of claim 1 , wherein the interface comprises a solder joint between leads of the first and molded electronic modules.

8. The stacked module arrangement of claim 1 , wherein the second molded electronic module is a power electronic module having a maximum breakdown voltage of at least 40V and a maximum DC current of at least 10 A, and wherein the first molded electronic module and the second molded electronic module form a power converter or inverter circuit.

9. The stacked module arrangement of claim 8 , further comprising a circuit board and/or a bus bar connected to the interface and interposed between the first molded electronic module and the second molded electronic module.

10. The stacked module arrangement of claim 8 , further comprising:

a first cooling device thermally coupled to a side of the first molded electronic module facing away from the interface; and

a second cooling device thermally coupled to a side of the second molded electronic module facing away from the interface.

11. The stacked module arrangement of claim 8 , wherein the first molded electronic module includes a first half-bridge, wherein the second molded electronic module includes a second half-bridge, and wherein the first half-bridge and the second half-bridge are stacked on one another via the interface.

12. The stacked module arrangement of claim 1 , wherein the first molded electronic module includes a transistor die, wherein the second molded electronic module includes a diode die, and wherein the interface electrically connects the diode die and the transistor die in an anti-parallel configuration.

13. The stacked module arrangement of claim 1 , wherein the first molded electronic module includes a power converter or inverter, and wherein the second molded electronic module includes a controller for the power converter or inverter.

14. The stacked module arrangement of claim 1 , wherein the first molded electronic module includes a power converter or inverter, and wherein the second molded electronic module includes a rectifier.

15. The stacked module arrangement of claim 1 , wherein the second molded electronic module is a logic module that includes a controller and/or a gate driver for the first molded electronic module.

16. The stacked module arrangement of claim 1 , further comprising one or more circuit boards physically and electrically connected to the interface and interposed between the first molded electronic module and the second molded electronic module.

17. The stacked module arrangement of claim 1 , further comprising one or more bus bars connected to the interface and interposed between the first molded electronic module and the second molded electronic module.

18. The stacked module arrangement of claim 1 , further comprising a third molded electronic module, wherein the third molded electronic module is a power electronic module having a maximum breakdown voltage of at least 40V and a maximum DC current of at least 10 A, and wherein the interface physically and electrically connects the third molded electronic module and the second molded electronic module to one another as part of the stacked configuration.

19. The stacked module arrangement of claim 18 , wherein the first molded electronic module includes a single power switch die, wherein the third molded electronic module includes a single power switch die, wherein the single power switch die included in the first molded electronic module and the single power switch die included in the third molded electronic module are electrically connected in a half-bridge configuration by the interface, and wherein the second molded electronic module is configured to drive both the single switch die included in the first molded electronic module and the single switch die included in the third molded electronic module.

20. The stacked module arrangement of claim 1 , wherein the maximum breakdown voltage is in a range of 750V to 1200V.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2022
From: SCHMOELZER, BERND; NIKITIN, IVAN; LUNIEWSKI, PETER
To: INFINEON TECHNOLOGIES AUSTRIA AG
Reel/Frame 058680/0346 →
Continuity (1)
Related Publication 20230230905A1 · Jul 20, 2023
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