Semiconductor devices and data storage systems including the same
A semiconductor device includes a substrate having a first region and a second region, a first stack structure in the first region, a first channel structure penetrating through the first stack structure and in contact with the substrate, and a second stack structure on the first stack structure and the first channel structure. The device includes a second channel structure penetrating through the second stack structure and connected to the first channel structure, a first molding structure in the second region, a first alignment structure penetrating through the first molding structure and in contact with the substrate, and a second molding structure on the first molding structure and the first alignment structure. The device includes a second alignment structure penetrating through the second molding structure and connected to the first alignment structure, and a protective layer between the first molding structure and the second molding structure.
1. A semiconductor device comprising:
a substrate having a first region and a second region;
a first stack structure in the first region, the first stack structure including lower gate electrodes spaced apart from each other and stacked in a first direction, the first direction perpendicular to an upper surface of the substrate;
a first channel structure penetrating through the first stack structure and in contact with the substrate;
a second stack structure on the first stack structure and the first channel structure, the second stack structure including upper gate electrodes spaced apart from each other and stacked in the first direction;
a second channel structure penetrating through the second stack structure and connected to the first channel structure;
a first molding structure in the second region, the first molding structure including lower horizontal sacrificial layers spaced apart from each other and stacked in the first direction;
a first alignment structure penetrating through the first molding structure and in contact with the substrate;
a second molding structure on the first molding structure and the first alignment structure, the second molding structure including upper horizontal sacrificial layers spaced apart from each other and stacked in the first direction;
a second alignment structure penetrating through the second molding structure and connected to the first alignment structure; and
a protective layer between the first molding structure and the second molding structure,
wherein among the upper horizontal sacrificial layers, a lowermost first horizontal sacrificial layer has an upper surface on a first level on the first alignment structure, a second level on the first molding structure of a periphery of the first alignment structure, and a third level on the protective layer, the second level is lower than the first level, and the third level is higher than the first level.
2. The semiconductor device of claim 1 , wherein the first region is a memory cell region including memory cells, and the second region is an alignment key region including alignment keys.
3. The semiconductor device of claim 1 , wherein the lowermost first horizontal sacrificial layer covers a portion of an upper surface of the first alignment structure and a portion of a side surface of the first alignment structure.
4. The semiconductor device of claim 1 , wherein
at least one of the upper horizontal sacrificial layers has a key pattern portion on an upper surface thereof, and
the key pattern portion is recessed to correspond to the first alignment structure.
5. The semiconductor device of claim 1 , wherein the lowermost first horizontal sacrificial layer has a recessed portion along the periphery of the first alignment structure.
6. The semiconductor device of claim 5 , wherein the protective layer is on a periphery of the recessed portion.
7. The semiconductor device of claim 1 , wherein the protective layer is spaced apart from the first alignment structure and the second alignment structure in a second direction, perpendicular to the first direction.
8. The semiconductor device of claim 1 , wherein the first molding structure has an uppermost surface lower than the first level and higher than the second level.
9. The semiconductor device of claim 1 , wherein the first alignment structure has an upper surface on a same level as an uppermost surface of the first molding structure.
10. The semiconductor device of claim 1 , wherein
the first channel structure is on a same level as the first alignment structure, and
the second channel structure is on a same level as the second alignment structure.
11. The semiconductor device of claim 1 , wherein
the first channel structure and the second channel structure are connected to each other to define a channel structure,
the first alignment structure and the second alignment structure are connected to each other to define an alignment structure, and
the channel structure and the alignment structure have a same internal structure.
12. The semiconductor device of claim 1 , wherein among the upper gate electrodes, a lowermost first gate electrode has a planar upper surface in the first region.
13. The semiconductor device of claim 1 , wherein among the upper gate electrodes, a lowermost first gate electrode has an upper surface on the third level, in the first region.
14. A semiconductor device comprising:
a substrate having a first region and a second region;
a first stack structure in the first region, the first stack structure including lower gate electrodes spaced apart from each other and stacked in a first direction, the first direction perpendicular to an upper surface of the substrate;
a first channel structure penetrating through the first stack structure and in contact with the substrate;
a second stack structure on the first stack structure and the first channel structure, the second stack structure including upper gate electrodes spaced apart from each other and stacked in the first direction;
a second channel structure penetrating through the second stack structure and connected to the first channel structure;
a first molding structure in the second region, the first molding structure including lower horizontal sacrificial layers spaced apart from each other and stacked in the first direction;
a first alignment structure penetrating through the first molding structure and in contact with the substrate;
a second molding structure on the first molding structure and the first alignment structure, the second molding structure including upper horizontal sacrificial layers spaced apart from each other and stacked in the first direction, and the second molding structure having a key pattern portion recessed downwardly on the first alignment structure; and
a protective layer between the first molding structure and the second molding structure.
15. The semiconductor device of claim 14 , wherein
the second molding structure further includes interlayer insulating layers stacked alternately with the upper horizontal sacrificial layers, and
each of the upper horizontal sacrificial layers and the interlayer insulating layers has the key pattern portion.
16. The semiconductor device of claim 14 , wherein the second molding structure covers an entire upper surface of the first alignment structure.
17. The semiconductor device of claim 14 , wherein among interlayer insulating layers of the second molding structure, a lowermost interlayer insulating layer is in contact with the first alignment structure.
18. The semiconductor device of claim 14 , wherein the second molding structure is disposed to partially recess the first molding structure from an upper surface of the first molding structure on a periphery of the first alignment structure.
19. A data storage system comprising:
a semiconductor storage device including a substrate having a first region and a second region, circuit devices on one side of the substrate, and an input/output pad electrically connected to the circuit devices; and
a controller electrically connected to the semiconductor storage device through the input/output pad and configured to control the semiconductor storage device,
wherein the semiconductor storage device further includes
a first stack structure in the first region, the first stack structure including lower gate electrodes spaced apart from each other and stacked in a first direction, the first direction perpendicular to an upper surface of the substrate;
a first channel structure penetrating through the first stack structure and in contact with the substrate;
a second stack structure on the first stack structure and the first channel structure, the second stack structure including upper gate electrodes spaced apart from each other and stacked in the first direction;
a second channel structure penetrating through the second stack structure and connected to the first channel structure;
a first molding structure in the second region, the first molding structure including lower horizontal sacrificial layers spaced apart from each other and stacked in the first direction;
a first alignment structure penetrating through the first molding structure and in contact with the substrate;
a second molding structure on the first molding structure and the first alignment structure, the second molding structure including upper horizontal sacrificial layers spaced apart from each other and stacked in the first direction, and the second molding structure having a key pattern portion recessed downwardly on the first alignment structure; and
a protective layer between the first molding structure and the second molding structure.
20. The data storage system of claim 19 , wherein the protective layer does not overlap the first alignment structure in the first direction.