IP Library › Granted Patent US 12,442,788
Granted Patent B2
US 12,442,788 · App. 17/626,255 · Granted Oct 14, 2025

Multi-gate OECT based sensor

Inventors: Anna Shirinskaya (Orsay Ville, FR); Yvan Bonnassieux (Paris, FR)
Assignee: ECOLE POLYTECHNIQUE; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
G01N27/4145
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Quick Facts
Patent No.
US 12,442,788
App. No.
17/626,255
Granted
Oct 14, 2025
Kind
B2
Abstract

An organo electro chemical transistor based sensor including at least one set of source and drain electrodes, a plurality of gate electrodes for this set, at least one channel connected to the source and drain electrodes of the at least one set; and at least two gate electrodes being differently functionalized.

Claims (21)

1. A detection device comprising an Organic Electro-Chemical Transistor (OECT) based sensor, comprising:

at least one set of source and drain electrodes;

a plurality of gate electrodes for said at least one set;

at least one channel connected to the source and drain electrodes of the at least one set;

at least one depolarizing electrode, the at least one depolarizing electrode extending on a substrate parallel the at least one channel, wherein the plurality of gate electrodes are situated on the substrate between the at least one depolarizing electrode and the at least one channel; and

wherein at least two gate electrodes of said plurality of gate electrodes are differently functionalized and said detection device is configured for applying a predefined potential on the at least one depolarizing electrode for de-doping said at least one channel before addressing a gate electrode of said plurality of gate electrodes.

2. The detection device of claim 1 , the source and drain electrodes of the at least one set being coplanar on the substrate.

3. The detection device of claim 1 , the plurality of gate electrodes being coplanar on the substrate with the source and drain electrodes of the at least one set.

4. The detection device of claim 1 , the plurality of gate electrodes on one end of the substrate and the source and drain electrodes of the at least one set on another end of the substrate extending in respective parallel planes.

5. The detection device of claim 1 , the at least two gate electrodes being made of different materials.

6. The detection device of claim 1 , wherein the at least two gate electrodes of said plurality of gate electrodes that are differently functionalized are selectively sensitive to different concentrations of a same analyte.

7. A method for producing the OECT based sensor according to claim 1 , comprising:

ink jet printing the source and drain electrodes of the at least one set and the plurality of gate electrodes, and

functionalizing differently at least two gate electrodes of the plurality of gate electrodes.

8. A method of detecting at least one analyte in a medium, using the detection device of claim 1 , comprising:

selecting a gate electrode of the plurality of gate electrodes,

applying a predefined potential to the selected gate electrode, and

determining a concentration of an analyte based on a current measured between the source and drain electrodes of the at least one set during application of the predefined potential to the selected gate electrode.

9. The method of claim 8 , wherein a specific potential is applied on the at least one depolarizing electrode between measurements, said method comprising applying the specific potential on the at least one depolarizing electrode for de-doping the at least one channel before applying the predefined potential to the selected gate electrode.

10. The method of claim 8 , further comprising the following step:

grounding all gate electrodes of the plurality of gate electrodes that are not selected.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2022
From: SHIRINSKAYA, ANNA; BONNASSIEUX, YVAN
To: ECOLE POLYTECHNIQUE; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Reel/Frame 059483/0695 →
Priority Claims (1)
EP 19305930 · Jul 11, 2019 · regional
Continuity (1)
Related Publication 20220276199A1 · Sep 1, 2022
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