IP Library Granted Patent US 12,444,726
Granted Patent B2
US 12,444,726 · App. 18/076,688 · Granted Oct 14, 2025

Active phased array antenna comprising a pseudo wafer including multiple feeders

Inventors: Kengo Kawasaki (Tokyo, JP); Akihito Hirai (Tokyo, JP); Shinya Yokomizo (Tokyo, JP); Masaomi Tsuru (Tokyo, JP)
Assignee: MITSUBISHI ELECTRIC CORPORATION
H01L25/18H01L23/5389H01L25/0652H01L25/105H01Q1/2283H01L23/49816
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,444,726
App. No.
18/076,688
Granted
Oct 14, 2025
Kind
B2
Abstract

There is provided an active phased array antenna in which power to an Si wafer is separated from power to compound semiconductor chips. An active phased array antenna is an active phased array antenna including a substrate having a plurality of antenna elements; a pseudo wafer containing a group of semiconductor chips including a plurality of semiconductor chips made of compound semiconductors; and a silicon wafer made of silicon, the substrate, the pseudo wafer, and the silicon wafer being stacked on top of each other in this order, and the pseudo wafer includes first feeders for supplying power to the group of semiconductor chips from the substrate; and a second feeder for supplying power to the silicon wafer from the substrate, the second feeder passing through the pseudo wafer in a thickness direction of the pseudo wafer.

Claims (33)

1. An active phased array antenna comprising:

a substrate having a plurality of antenna elements;

a pseudo wafer containing a group of semiconductor chips including a plurality of semiconductor chips made of compound semiconductors; and

a silicon wafer made of silicon, the substrate, the pseudo wafer, and the silicon wafer being stacked on top of each other in this order, wherein

the pseudo wafer includes:

first feeders to supply power to the group of semiconductor chips from the substrate; and

a second feeder to supply power to the silicon wafer from the substrate, the second feeder passing through the pseudo wafer in a thickness direction of the pseudo wafer.

2. The active phased array antenna according to claim 1 , wherein

an area of the silicon wafer is greater than or equal to a sum of areas of antenna planes of two adjacent elements among the plurality of antenna elements, and

an area of one semiconductor chip among the plurality of semiconductor chips is smaller than an area of an antenna plane of one antenna element among the plurality of antenna elements.

3. The active phased array antenna according to claim 1 , wherein the plurality of semiconductor chips includes a semiconductor chip having input and output terminals formed on both front and rear surfaces of the semiconductor chip.

4. The active phased array antenna according to claim 2 , wherein the plurality of semiconductor chips includes a semiconductor chip having input and output terminals formed on both front and rear surfaces of the semiconductor chip.

5. The active phased array antenna according to claim 1 , wherein the plurality of semiconductor chips includes a semiconductor chip having input and output terminals formed only on one surface of the semiconductor chip, and

the pseudo wafer has multilayer redistribution to connect the input and output terminals of the semiconductor chip to input and output terminals of the silicon wafer.

6. The active phased array antenna according to claim 2 , wherein the plurality of semiconductor chips includes a semiconductor chip having input and output terminals formed only on one surface of the semiconductor chip, and

the pseudo wafer has multilayer redistribution to connect the input and output terminals of the semiconductor chip to input and output terminals of the silicon wafer.

7. The active phased array antenna according to claim 1 , wherein the pseudo wafer has a thermal via to thermally connect, instead of electrically connect, a surface of the pseudo wafer facing the substrate to any one of the semiconductor chips included in the group of semiconductor chips.

8. An active phased array antenna comprising:

a substrate having a plurality of antenna elements formed thereon;

a first pseudo wafer containing a first group of semiconductor chips including a plurality of semiconductor chips made of compound semiconductors;

a second pseudo wafer containing one or more silicon wafers made of silicon; and

a third pseudo wafer containing a second group of semiconductor chips including a plurality of semiconductor chips made of compound semiconductors, the substrate, the first pseudo wafer, the second pseudo wafer, and the third pseudo wafer being stacked on top of each other in this order, wherein

the first pseudo wafer includes:

first feeders to supply power to the first group of semiconductor chips from the substrate;

a second feeder to supply power to the one or more silicon wafers from the substrate, the second feeder passing through the first pseudo wafer in a thickness direction of the first pseudo wafer; and

a third feeder to supply power to the second group of semiconductor chips from the substrate, the third feeder passing through the first pseudo wafer in the thickness direction of the first pseudo wafer.

9. The active phased array antenna according to claim 8 , wherein the plurality of semiconductor chips includes a semiconductor chip having input and output terminals formed on both front and rear surfaces of the semiconductor chip.

10. The active phased array antenna according to claim 8 , wherein the plurality of semiconductor chips includes a semiconductor chip having input and output terminals formed only on one surface of the semiconductor chip, and

the first pseudo wafer has multilayer redistribution to connect the input and output terminals of the semiconductor chip to input and output terminals of the silicon wafer.

11. The active phased array antenna according to claim 8 , wherein the first pseudo wafer has a thermal via to thermally connect, instead of electrically connect, a surface of the first pseudo wafer facing the substrate to any one of the semiconductor chips included in the first group of semiconductor chips.

12. The active phased array antenna according to claim 9 , wherein the first pseudo wafer has a thermal via to thermally connect, instead of electrically connect, a surface of the first pseudo wafer facing the substrate to any one of the semiconductor chips included in the first group of semiconductor chips.

13. The active phased array antenna according to claim 10 , wherein the first pseudo wafer has a thermal via to thermally connect, instead of electrically connect, a surface of the first pseudo wafer facing the substrate to any one of the semiconductor chips included in the first group of semiconductor chips.

14. The active phased array antenna according to claim 8 , wherein the third feeder passes through the second pseudo wafer in a thickness direction of the second pseudo wafer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2022
From: KAWASAKI, KENGO; HIRAI, AKIHITO; YOKOMIZO, SHINYA; TSURU, MASAOMI
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 062027/0383 →
Continuity (2)
Continuation PCTJP2020029486 · Jul 31, 2020
Related Publication 20230099900A1 · Mar 30, 2023
References Cited (11)
US 20020064906A1 · Enquist · 2002 [cited by applicant]
US 20020164839A1 · Enquist · 2002 [cited by applicant]
US 20030119279A1 · Enquist · 2003 [cited by applicant]
US 20200212537A1 · Chuang et al. · 2020 [cited by applicant]
US 20200258924A1 · Takachi · 2020 [cited by examiner]
US 20230104551A1 · Chuang et al. · 2023 [cited by applicant]
DE 102019124237A1 · 2020 [cited by applicant]
JP 201584421A · 2015 [cited by applicant]
European Communication pursuant to Article 94(3) EPC for European Application No. 20 947 073.1, dated Feb. 15, 2024. [cited by applicant]
International Search Report, issued in PCT/JP2020/029486, PCT/ISA/210, dated Oct. 6, 2020. [cited by applicant]
Written Opinion of the International Searching Authority, issued in PCT/JP2020/029486, PCT/ISA/237, dated Oct. 6, 2020. [cited by applicant]