Light-emitting structure and light-emitting device including the same
Disclosed is a light-emitting structure including a light-emitting diode and a connecting unit. The light-emitting diode includes an epitaxial laminate, a first electrode, and a second electrode. The epitaxial laminate includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The connecting unit is connected to the epitaxial laminate.
1. A light-emitting structure, comprising:
a light-emitting diode including:
an epitaxial laminate having an upper surface and a recess extending inwardly from said upper surface, said epitaxial laminate including
a first type semiconductor layer,
a second type semiconductor layer, and
a light-emitting layer interposed between said first type semiconductor layer and said second type semiconductor layer,
a first electrode electrically connected to said first type semiconductor layer, and
a second electrode electrically connected to said second type semiconductor layer; and
a connecting unit connected to said epitaxial laminate,
wherein said epitaxial laminate further has a lower surface opposite to said upper surface, said lower surface having a first surface portion located at said first type semiconductor layer, a second surface portion located at said second type semiconductor layer, and a shoulder surface portion interconnecting said first surface portion and said second surface portion, said recess being misaligned with said first surface portion in a longitudinal direction transverse to said upper surface of said epitaxial laminate.
2. The light-emitting structure according to claim 1 , wherein said connecting unit is connected to said upper surface of said epitaxial laminate.
3. The light-emitting structure according to claim 1 , wherein said epitaxial laminate further has a lower surface opposite to said upper surface, and a lateral surface transverse to and interconnecting said upper and lower surfaces, said connecting unit being connected to said lateral surface of said epitaxial laminate.
4. The light-emitting structure according to claim 1 , wherein said connecting unit includes at least two connecting members.
5. The light-emitting structure according to claim 4 , wherein said connecting members are misaligned with said recess of said epitaxial laminate.
6. The light-emitting structure according to claim 1 , wherein said connecting unit is made of a dielectric material selected from the group consisting of SiO 2 , SiN, AlN, Al 2 O 3 , and combinations thereof.
7. The light-emitting structure according to claim 4 , wherein each of said connecting members includes a first end portion proximate to said recess and connected to said epitaxial laminate, and a second end portion distal from said recess and formed with a broken surface.
8. The light-emitting structure according to claim 1 , wherein a shortest distance between said first surface portion and a bottom of said recess is up to 4 μm.
9. The light-emitting structure according to claim 1 , wherein said recess has a roughened surface.
10. The light-emitting structure according to claim 1 , wherein said recess has an opening with a center which is misaligned with a chip center in a longitudinal direction transverse to said upper surface of said epitaxial laminate.
11. The light-emitting structure according to claim 10 , wherein said center of said opening of said recess is misaligned with a center of said upper surface of said epitaxial laminate in the longitudinal direction.
12. The light-emitting structure according to claim 1 , wherein said recess has a depth ranging from 0.1 μm to 1.0 μm.
13. The light-emitting structure according to claim 1 , wherein said recess extends convergingly from said upper surface of said epitaxial laminate.
14. The light-emitting structure according to claim 1 , wherein said first and second electrodes are disposed on a same surface of said epitaxial laminate.
15. The light-emitting structure according to claim 1 , which said light-emitting diode is a micro light-emitting diode having a chip size of up to 100 μm×100 μm.
16. The light-emitting structure according to claim 10 , wherein said opening of said recess has an area ranging from 30% to 50% of an area of said upper surface of said epitaxial laminate.
17. A light-emitting device, comprising:
an outer support member having
an upper surface with an opening, and
a receiving space extending inwardly from said opening; and
the light-emitting structure according to claim 1 , wherein
said light-emitting diode of said light-emitting structure is received in said receiving space and spaced apart from said outer support member, and
said connecting unit is disposed on said upper surface of said outer support member to interconnect said light-emitting diode and said outer support member so as to permit said light-emitting diode to be suspended in said receiving space.
18. The light-emitting device according to claim 17 , wherein said light-emitting diode is spaced apart from said outer support member in a longitudinal direction transverse to said upper surface of said epitaxial laminate by a distance which is equal to at least a thickness of said connecting unit.
19. The light-emitting device according to claim 17 , further comprising a substrate disposed beneath said outer support member.