IP Library › Granted Patent US 12,448,283
Granted Patent B2
US 12,448,283 · App. 18/594,647 · Granted Oct 21, 2025

Micro-device structures with etch holes

Inventor: Pierluigi Rubino (Cork, IE)
Assignee: X-Celeprint Limited
B81C1/00039B81C1/00523B81C1/00555B81C2201/0105B81C2201/013
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,448,283
App. No.
18/594,647
Granted
Oct 21, 2025
Kind
B2
Abstract

A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

Claims (20)

1. A micro-device structure, comprising:

a target substrate;

a micro-device disposed on or over the target substrate, the micro-device (i) having a top side and a bottom side opposite the top side and adjacent to the target substrate and (ii) comprising an etch hole that extends through the micro-device from the top side to the bottom side; and

at least a portion of a broken or separated tether physically connected to the micro-device,

wherein the micro-device is non-native to the target substrate and the tether is external to the micro-device and the etch hole.

2. The micro-device structure of claim 1 , wherein the micro-device comprises one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

3. The micro-device structure of claim 1 , wherein the etch hole is at a geometric center of the micro-device.

4. The micro-device structure of claim 1 , wherein the etch hole and the micro-device are both rectangular, the etch hole has an etch-hole edge, the micro-device has a micro-device edge, and the etch-hole edge is substantially parallel to the micro-device edge.

5. A micro-device structure, comprising:

a target substrate;

a micro-device disposed on or over the target substrate, the micro-device (i) having a top side and a bottom side opposite the top side and adjacent to the target substrate and (ii) comprising an etch hole that extends through the micro-device from the top side to the bottom side; and

at least a portion of a broken or separated tether physically connected to the micro-device,

wherein the micro-device has a crystalline structure and a micro-device edge direction is oriented at an angle from 30 to 60 degrees with respect to a {110} crystal plane of the crystalline structure.

6. The micro-device structure of claim 5 , wherein the micro-device comprises a micro-device edge having a direction oriented at an angle of substantially 45 degrees with respect to the {110} crystal plane.

7. A micro-device structure, comprising:

a target substrate;

a micro-device disposed on or over the target substrate, the micro-device (i) having a top side and a bottom side opposite the top side and adjacent to the target substrate and (ii) comprising an etch hole that extends through the micro-device from the top side to the bottom side; and

at least a portion of a broken or separated tether physically connected to the micro-device,

wherein the etch hole is rectangular and has an etch-hole width, the tether has a tether width, and the etch-hole width is no less than the tether width.

8. The micro-device structure of claim 7 , wherein the etch-hole width is measured in a direction parallel to the tether width.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2024
From: RUBINO, PIERLUIGI
To: X-CELEPRINT LIMITED
Reel/Frame 066652/0984 →
Continuity (2)
Division 17066448 · Oct 8, 2020
Related Publication 20240199413A1 · Jun 20, 2024
References Cited (92)
US 6142358A · Cohn et al. · 2000 [cited by applicant]
US 7195733B2 · Rogers et al. · 2007 [cited by applicant]
US 7354801B2 · Sugiyama et al. · 2008 [cited by applicant]
US 7521292B2 · Rogers et al. · 2009 [cited by applicant]
US 7557367B2 · Rogers et al. · 2009 [cited by applicant]
US 7622367B1 · Nuzzo et al. · 2009 [cited by applicant]
US 7662545B2 · Nuzzo et al. · 2010 [cited by applicant]
US 7704684B2 · Rogers et al. · 2010 [cited by applicant]
US 7799699B2 · Nuzzo et al. · 2010 [cited by applicant]
US 7932123B2 · Rogers et al. · 2011 [cited by applicant]
US 7943491B2 · Nuzzo et al. · 2011 [cited by applicant]
US 7972875B2 · Rogers et al. · 2011 [cited by applicant]
US 8039847B2 · Nuzzo et al. · 2011 [cited by applicant]
US 8333860B1 · Bibl et al. · 2012 [cited by applicant]
US 8470701B2 · Rogers et al. · 2013 [cited by applicant]
US 8558243B2 · Bibl et al. · 2013 [cited by applicant]
US 8722458B2 · Rogers et al. · 2014 [cited by applicant]
US 8791474B1 · Bibl et al. · 2014 [cited by applicant]
US 8794501B2 · Bibl et al. · 2014 [cited by applicant]
US 8835940B2 · Hu et al. · 2014 [cited by applicant]
US 8865489B2 · Rogers et al. · 2014 [cited by applicant]
US 8877648B2 · Bower et al. · 2014 [cited by applicant]
US 8889485B2 · Bower · 2014 [cited by applicant]
US 8934259B2 · Bower et al. · 2015 [cited by applicant]
US 8941215B2 · Hu et al. · 2015 [cited by applicant]
US 8987765B2 · Bibl et al. · 2015 [cited by applicant]
US 9049797B2 · Menard et al. · 2015 [cited by applicant]
US 9087764B2 · Chan et al. · 2015 [cited by applicant]
US 9105714B2 · Hu et al. · 2015 [cited by applicant]
US 9111464B2 · Bibl et al. · 2015 [cited by applicant]
US 9139425B2 · Vestyck · 2015 [cited by applicant]
US 9153171B2 · Sakariya et al. · 2015 [cited by applicant]
US 9161448B2 · Menard et al. · 2015 [cited by applicant]
US 9165989B2 · Bower et al. · 2015 [cited by applicant]
US 9166114B2 · Hu et al. · 2015 [cited by applicant]
US 9178123B2 · Sakariya et al. · 2015 [cited by applicant]
US 9217541B2 · Bathurst et al. · 2015 [cited by applicant]
US 9240397B2 · Bibl et al. · 2016 [cited by applicant]
US 9252375B2 · Bibl et al. · 2016 [cited by applicant]
US 9355854B2 · Meitl et al. · 2016 [cited by applicant]
US 9358775B2 · Bower et al. · 2016 [cited by applicant]
US 9367094B2 · Bibl et al. · 2016 [cited by applicant]
US 9412727B2 · Menard et al. · 2016 [cited by applicant]
US 9478583B2 · Hu et al. · 2016 [cited by applicant]
US 9484504B2 · Bibl et al. · 2016 [cited by applicant]
US 9520537B2 · Bower et al. · 2016 [cited by applicant]
US 9555644B2 · Rogers et al. · 2017 [cited by applicant]
US 9583533B2 · Hu et al. · 2017 [cited by applicant]
US 9589944B2 · Higginson et al. · 2017 [cited by applicant]
US 9601356B2 · Bower et al. · 2017 [cited by applicant]
US 9640715B2 · Bower et al. · 2017 [cited by applicant]
US 9716082B2 · Bower et al. · 2017 [cited by applicant]
US 9761754B2 · Bower et al. · 2017 [cited by applicant]
US 9765934B2 · Rogers et al. · 2017 [cited by applicant]
US 9865832B2 · Bibl et al. · 2018 [cited by applicant]
US 9929053B2 · Bower et al. · 2018 [cited by applicant]
US 11952266B2 · Rubino · 2024 [cited by applicant]
US 12006205B2 · Trindade et al. · 2024 [cited by applicant]
US 20020086540A1 · Lebouitz · 2002 [cited by examiner]
US 20030141570A1 · Chen et al. · 2003 [cited by applicant]
US 20040248376A1 · Kiihamaki · 2004 [cited by examiner]
US 20070173034A1 · Tsurume et al. · 2007 [cited by applicant]
US 20100176465A1 · Yama · 2010 [cited by examiner]
US 20100306993A1 · Mayyas et al. · 2010 [cited by applicant]
US 20130277770A1 · Tsai et al. · 2013 [cited by applicant]
US 20130300812A1 · Bibl et al. · 2013 [cited by applicant]
US 20130309792A1 · Tischler et al. · 2013 [cited by applicant]
US 20130316487A1 · de Graff et al. · 2013 [cited by applicant]
US 20140159043A1 · Sakariya et al. · 2014 [cited by applicant]
US 20160093600A1 · Bower et al. · 2016 [cited by applicant]
US 20170338374A1 · Zou et al. · 2017 [cited by applicant]
US 20170358717A1 · Cok et al. · 2017 [cited by applicant]
US 20180174910A1 · Bower · 2018 [cited by examiner]
US 20220112073A1 · Trindade et al. · 2022 [cited by applicant]
US 20250042717A1 · Trindade et al. · 2025 [cited by applicant]
Flader et al. (“Micro-Tethering for Fabrication of Encapsulated Inertial Sensors With High Sensitivity,” Journal of Microelectromechanical Systems, vol. 28, No. 3, Jun. 2019) (Year: 2019). [cited by examiner]
Bower, C. A. et al., Micro-Transfer-Printing: Heterogeneous Integration of Microscale Semiconductor Devises using Elastomer Stamps, IEEE Conference, (2014). [cited by applicant]
Bower, C. A. et al., Transfer Printing: An Approach for Massively Parallel Assembly of Microscale Devices, IEEE, Electronic Components and Technology Conference, (2008). [cited by applicant]
Bower, C. A. et al., Emissive displays with transfer-printed assemblies of 8 μm×15 μm inorganic light-emitting diodes, Photonics Research, 5(2):A23-A29, (2017). [cited by applicant]
Cok, R. S. et al., 60.3: AMOLED Displays Using Transfer-Printed Integrated Circuits, Society for Information Display, 10:902-904, (2010). [cited by applicant]
Cok, R. S. et al., AMOLED displays with transfer-printed integrated circuits, Journal of SID, 19(4):335-341, (2011). [cited by applicant]
Cok, R. S. et al., Inorganic light-emitting diode displays using micro-transfer printing, Journal of the SID, 25(10):589-609, (2017). [cited by applicant]
Feng, X. et al., Competing Fracture in Kinetically Controlled Transfer Printing, Langmuir, 23(25):12555-12560, (2007). [cited by applicant]
Gent, A.N., Adhesion and Strength of Viscoelastic Solids. Is There a Relationship between Adhesion and Bulk Properties, American Chemical Society, Langmuir, 12(19):4492-4496, (1996). [cited by applicant]
Kim, Dae-Hyeong et al., Optimized Structural Designs for Stretchable Silicon Integrated Circuits, Small, 5(24):2841-2847, (2009). [cited by applicant]
Kim, Dae-Hyeong et al., Stretchable and Foldable Silicon Integrated Circuits, Science, 320:507-511, (2008). [cited by applicant]
Kim, S. et al., Microstructured elastomeric surfaces with reversible adhesion and examples of their use in deterministic assembly by transfer printing, PNAS, 107(40):17095-17100 (2010). [cited by applicant]
Kim, T. et al., Kinetically controlled, adhesiveless transfer printing using microstructured stamps, Applied Physics Letters, 94(11):113502-1-113502-3, (2009). [cited by applicant]
Meitl, M. A. et al., Transfer printing by kinetic control of adhesion to an elastomeric stamp, Nature Material, 5:33-38, (2006). [cited by applicant]
Michel, B. et al., Printing meets lithography: Soft approaches to high-resolution patterning, J. Res. & Dev. 45(5):697-708, (2001). [cited by applicant]
Trindade, A.J. et al., Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes, Crown, pp. 217-218, (2012). [cited by applicant]
Haobing, L. et al., Layout controlled one-step dry etch and release of MEMS using deep RIE on SOI wafer, Journal of Microelectromechanical Systems, 15(3):541-547 (2006). [cited by applicant]