Granted Patent B2

US 12,448,704 · App. 17/420,593 · Granted Oct 21, 2025

Inventor: Haruhiko Udono (Hitachi, JP)

Assignees: JX ADVANCED METALS CORPORATION; IBARAKI UNIVERSITY

C30B29/52C30B11/02H10F77/12

Abstract

Claims (12)

1. A Mg 2 Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°, and

the single crystal comprises at least one of B, Li, Al, P, and As as a dopant.

2. The Mg 2 Si single crystal according to claim 1 , wherein the variation in crystal orientation as measured by XRD is in a range of ±0.016°.

3. A Mg 2 Si single crystal substrate, comprising the Mg 2 Si single crystal according to claim 1 .

4. A Mg 2 Si single crystal substrate according to claim 3 , wherein the substrate has a size of 25 mm to 150 mm.

5. An infrared light receiving element, comprising the Mg 2 Si single crystal according to claim 1 .

6. A method for producing the Mg 2 Si single crystal according to claim 1 , the method comprising the following steps (1) to (5):

(1) a raw material preparation step of preparing a raw material comprising at least Mg and Si;

(2) a raw material filling step of filling the raw material prepared in the step (1) in a pBN crucible, at least an inner surface of the pBN crucible being coated with BN;

(3) a synthesis step of heating the entire crucible to cause a melting chemical reaction of the raw material filled in the crucible in the step (2);

(4) a step of cooling a melt produced in the step (3) to deposit a Mg 2 Si single crystal; and

(5) a step of removing the Mg 2 Si single crystal deposited in the step (4) from the crucible.

Assignments (3)

Priority Claims (1)

Continuity (1)

References Cited (33)