Edge interface placements to enable chiplet rotation into multi-chiplet cluster
A chiplet-based system comprises a substrate including conductive interconnect and multiple chiplets arranged on the interposer and interconnected using the conductive interconnect of the substrate. A chiplet includes multiple columns of multiple input-output (I/O) channels and the I/O channels are connected to a block of I/O pads and each side of the chiplet includes multiple blocks of the I/O pads. The multiple blocks of I/O pads on the side of the chiplet are arranged symmetrically relative to a centerline of the chiplet and each block of I/O pads on the side of the chiplet is at a common distance from any adjacent block of I/O pads on the side.
1. A method comprising:
forming an interposer, the interposer including a substrate and one or more layers of conductive interconnect;
forming multiple chiplets, each chiplet including multiple edges and multiple blocks of input/output (I/O) pads on each of the multiple edges including a first edge of the chiplet and an adjacent edge of the chiplet adjacent to the first edge, wherein the multiple blocks of I/O pads on an edge of the chiplet are arranged symmetrically relative to a centerline of the chiplet and each block of I/O pads on the edge of the chiplet is at a common distance from any adjacent block of I/O pads on the edge, and the multiple blocks of I/O pads of the first edge of the chiplet are each attached to a principal I/O channel, and the multiple blocks of I/O pads of the adjacent edge are each attached to a subordinate I/O channel; and
disposing the multiple chiplets on the interposer so that the multiple blocks of I/O pads of a chiplet are aligned with multiple blocks of I/O pads of another chiplet and are interconnected using the one or more layers of conductive interconnect.
2. The method of claim 1 , wherein a block of I/O pads is arranged on its corresponding edge of the chiplet at a distance from the centerline of the chiplet equal to one half of the distance between the multiple blocks of I/O pads on the corresponding edge.
3. The method of claim 1 , wherein forming multiple chiplets includes forming a chiplet to have an even number of blocks of I/O pads on an edge of the chiplet, and each of the blocks of I/O pads on the edge is placed a distance from the centerline of the chiplet equal to the one half of the distance between adjacent blocks of I/O pads.
4. The method of claim 1 , wherein forming multiple chiplets includes forming a chiplet to have an odd number of blocks of I/O pads on a side of the chiplet, including a center block of I/O pads; and wherein the center block of I/O pads is centered on the center line of the chiplet and the other blocks of I/O pads are placed at the distance from the centerline of the chiplet equal to one half of the distance between the other blocks of I/O pads.
5. The method of claim 1 , wherein forming an interposer includes forming an interposer to include a chiplet mesh network in the interconnect of the interposer.
6. The method of claim 1 , wherein forming multiple chiplets includes forming a memory controller chiplet and a memory device chiplet, and arranging the memory controller chiplet and the memory device chiplet on the interposer.
7. The method of claim 1 , wherein forming an interposer includes forming an interposer that as a silicon substrate included in a chip on wafer silicon substrate package.
8. The method of claim 1 , wherein forming an interposer includes forming an interposer that includes an embedded multi-die interconnect bridge (EMIB).
9. The method of claim 1 , wherein forming an interposer includes forming an interposer that includes an organic substrate.
10. The method of claim 1 , wherein forming multiple chiplets includes:
forming a memory controller chiplet having multiple I/O channels and another chiplet;
forming multiple I/O micro-bump blocks on each side of the memory controller chiplet that are connected to the multiple I/O channels; wherein an I/O micro-bump block is disposed at a periphery of the chiplet at a distance from a centerline of the chiplet equal to one half of the distance between I/O micro-bump blocks on a side of the chiplet; and
arranging the memory controller chiplet on the interposer.
11. The method of claim 10 ,
wherein the forming multiple I/O micro-bump blocks includes:
forming an even number of I/O micro-bump blocks; and
disposing the I/O micro-bump blocks at the periphery of the memory controller chiplet at a distance from a centerline of the memory controller chiplet equal to the one half of the distance between adjacent I/O micro-bump blocks; and
wherein the forming the other chiplet includes:
forming an even number of I/O micro-bump blocks connected to advanced interface bus (AIB) channels; and
disposing the other chiplet on the interposer such that a facing side of the other chiplet includes an even number of I/O micro-bumps aligned with the micro-bump blocks of the memory controller chiplet.
12. The method of claim 11 ,
wherein the forming multiple I/O micro-bump blocks includes:
forming an odd number of I/O micro-bump blocks including a center I/O micro-bump block; and
disposing the I/O micro-bump blocks at the periphery of the memory controller chiplet such that the center I/O micro-bump block is centered on the center line of the memory controller chiplet and the other I/O micro-bump blocks are placed at are distance from the centerline of the chiplet equal to one half of the distance between the other I/O micro-bump blocks; and
wherein the forming the other chiplet includes:
forming an odd number of I/O micro-bump blocks connected to advanced interface bus (AIB) channels; and
disposing the other chiplet on the interposer such that a facing side of the other chiplet includes an odd number of I/O micro-bumps aligned with the I/O micro-bump blocks of the memory controller chiplet.