Multichip interconnect package
An interconnected semiconductor subassembly structure includes an interconnect structure; a first semiconductor die bonded to a first portion of a top surface of the interconnect structure; a second semiconductor die bonded to a second portion of the top surface of the interconnect structure; and a resin layer located within at least a first portion of a gap between the first semiconductor die and the second semiconductor die, wherein at least one of a top surface and a bottom surface of the resin layer located within the at least first portion of the gap has a concave meniscus shape.
1. An interconnected semiconductor subassembly structure, comprising:
an interconnect structure;
a first semiconductor die bonded to a first portion of a top surface of the interconnect structure;
a second semiconductor die bonded to a second portion of the top surface of the interconnect structure; and
a resin layer located within at least a first portion of a gap between the first semiconductor die and the second semiconductor die, wherein a top surface and a bottom surface of the resin layer located within the at least first portion of the gap each have a concave meniscus shape.
2. The interconnected semiconductor subassembly structure of claim 1 , wherein:
the gap between the first semiconductor die and the second semiconductor die comprises a third gap;
a first gap is located between a bottom surface of the first semiconductor die and the first portion of the top surface of the interconnect structure; and
a second gap is located between the bottom surface of the second semiconductor die and the second portion of the top surface of the interconnect structure;
further comprising capillary underfill located within at least a portion of the first gap and at least a portion of the second gap.
3. The interconnected semiconductor subassembly structure of claim 2 , wherein a gap length of the third gap located between the first and second semiconductor dies is greater than a gap height of the first and second gaps located between the first and second semiconductor dies and the interconnect structure, respectively.
4. The interconnected semiconductor subassembly structure of claim 3 , wherein a gap height of the first and second gaps located between the first and second semiconductor dies and the interconnect structure, respectively, is greater than or equal to 5 μm and less than or equal to 100 μm, and the third gap is greater than or equal to 50 μm and less than or equal to 500 μm.
5. The interconnected semiconductor subassembly structure of claim 2 , wherein the first and second semiconductor dies are bonded to the interconnect structure by a plurality of micro metal joints.
6. The interconnected semiconductor subassembly structure of claim 1 , further comprising:
a package substrate; and
a plurality of solder bumps electrically connected between the package substrate and the first semiconductor die and between the package substrate and the second semiconductor die.
7. The interconnected semiconductor subassembly structure of claim 6 , further comprising at least one wicking enhancer positioned to enhance wicking in at least one of the first gap, the second gap, and the third gap,
wherein the at least one wicking enhancer comprises at least one stud located at least partially within the first portion of the third gap, the at least one stud being attached to at least one of the interconnect structure, the first semiconductor die, and the second semiconductor die.
8. The interconnected semiconductor subassembly structure of claim 7 , wherein the at least one stud comprises a vertical post attached to the interconnect structure.
9. The interconnected semiconductor subassembly structure of claim 8 , wherein the at least one stud does not touch the first semiconductor die or the second semiconductor die.
10. The interconnected semiconductor subassembly structure of claim 7 , wherein the at least one stud is attached to at least one of the first semiconductor die and the second semiconductor die.
11. The interconnected semiconductor subassembly structure of claim 7 , wherein the at least one stud comprises a rectangular prism attached edge-on to the interconnect structure and having a long axis running between the first semiconductor die and the second semiconductor die.
12. The interconnected semiconductor subassembly structure of claim 7 , wherein the at least one stud comprises a first dummy bump on the interconnect structure touching a corner of the first semiconductor die adjacent the third gap and a second dummy bump on the interconnect structure touching a corner of the second semiconductor die adjacent the third gap.
13. The interconnected semiconductor subassembly structure of claim 7 , further comprising a permanent reservoir located in at least one of the first semiconductor die and the second semiconductor die in communication with the third gap.
14. A method of forming an interconnected semiconductor subassembly structure, comprising:
bonding a first semiconductor die to a first portion of a top surface of an interconnect structure;
bonding a second semiconductor die to a second portion of the top surface of the interconnect structure; and
via capillary action, forming a resin layer within at least a first portion of a gap between the first semiconductor die and the second semiconductor die, at least one of a top surface and a bottom surface of the resin layer having a concave meniscus shape,
wherein the step of forming the resin layer within the at least first portion of the gap between the first semiconductor die and the second semiconductor die via capillary action is carried out prior to bonding the first semiconductor die to the first portion of the top surface of the interconnect structure and bonding the second semiconductor die to the second portion of the top surface of the interconnect structure.
15. The method of claim 14 , wherein:
the gap between the first semiconductor die and the second semiconductor die comprises a third gap;
the bonding of the first semiconductor die to the first portion of the interconnect structure defines a first gap located between a bottom surface of the first semiconductor die and the first portion of the top surface of the interconnect structure; and
the bonding of the second semiconductor die to the second portion of the interconnect structure defines a second gap located between a bottom surface of the second semiconductor die and the second portion of the top surface of the interconnect structure;
further comprising dispensing capillary underfill within at least a portion of the first gap and at least a portion of the second gap.
16. The method of claim 15 , wherein, in the steps of bonding the first and second semiconductor dies, a gap length of the third gap located between the first and second semiconductor dies is greater than a gap height of the first and second gaps located between the first and second semiconductor dies and the interconnect structure, respectively.
17. The method of claim 15 , further comprising:
prior to forming the resin layer, positioning the first semiconductor die on a first portion of a top surface of a carrier;
prior to forming the resin layer, positioning the second semiconductor die on a second portion of the top surface of the carrier; and
forming the resin layer within the at least first portion of the gap between the first semiconductor die and the second semiconductor die via the capillary action, while the first and second semiconductor dies are positioned on the carrier, with both the top surface and the bottom surface of the resin layer having the concave meniscus shape.
18. The method of claim 17 , wherein the interconnect structure comprises a bridge facing the bottom surface of the resin layer.
19. The method of claim 17 , further comprising joining the first semiconductor die and the second semiconductor die to a laminate packaging substrate.
20. The method of claim 14 , wherein the interconnect structure is selected from the group consisting of a bridge, an interposer, and a redistribution layer (RDL).
21. The interconnected semiconductor subassembly structure of claim 1 , wherein the interconnect structure is selected from the group consisting of a bridge, an interposer, and a redistribution layer (RDL).
22. An interconnected semiconductor subassembly structure comprising:
an interconnect structure;
a first semiconductor die bonded to a first portion of a top surface of the interconnect structure;
a second semiconductor die bonded to a second portion of the top surface of the interconnect structure;
a resin layer located within at least a first portion of a gap between the first semiconductor die and the second semiconductor die; and
a chip binding layer formed on top of the resin layer formed within the first portion of the gap located between the first semiconductor die and the second semiconductor die, wherein a top surface of the chip binding layer has a concave meniscus shape and is located below a top surface of the first and second semiconductor dies, respectively.