Structures and processes for void-free hybrid bonding
An apparatus for bonding a first substrate to a second substrate includes a heatable mounting stage configured to accommodate a first semiconductor substrate on an upward-facing surface and a first stack of semiconductor materials on the first semiconductor substrate; a heatable bond head configured to accommodate a second semiconductor substrate on a downward-facing surface and a second stack of semiconductor materials on the second semiconductor substrate; and a collet disposed on the downward-facing surface of the heatable bond head and configured to receive the second semiconductor substrate and the second stack of semiconductor materials. The heatable bond head is configured to have a vacuum applied thereto to deformably accommodate the second semiconductor substrate and the second stack of semiconductor materials against the collet. The heatable bond head is configured to be pressed against the heatable mounting stage to bond the semiconductor materials.
1. An apparatus for bonding a first substrate to a second substrate, the apparatus comprising:
a heatable mounting stage configured to accommodate a first semiconductor substrate on an upward-facing surface and a first stack of semiconductor materials on the first semiconductor substrate;
a heatable bond head configured to accommodate a second semiconductor substrate on a downward-facing surface and a second stack of semiconductor materials on the second semiconductor substrate; and
a collet disposed on the downward-facing surface of the heatable bond head and configured to receive the second semiconductor substrate and the second stack of semiconductor materials;
wherein the heatable bond head is configured to have a vacuum applied thereto to deformably accommodate the second semiconductor substrate and the second stack of semiconductor materials against the collet;
wherein the heatable bond head is configured to be pressed against the heatable mounting stage to bond the second stack of semiconductor materials to the first stack of semiconductor materials; and
wherein the heatable bond stage is configured to have a vacuum applied thereto to flatten and secure the first semiconductor substrate during bonding.
2. The apparatus of claim 1 , wherein the collet is mounted in a center portion of the downward-facing surface of the heatable bond head and extends 5 micrometers to 50 micrometers from the downward-facing surface.
3. The apparatus of claim 1 , wherein at least one of the heatable mounting stage and the heatable bond head are configured to be heated to 25 degrees C. to 100 degrees C.
4. The apparatus of claim 1 , wherein a pressure applied by the heatable bond head against the heatable mounting stage is 0.1 grams to 1000 grams.
5. The apparatus of claim 1 , wherein a downward facing surface of the collet is curved.