Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes: a Si substrate; a back electrode provided below the Si substrate; a SiC layer provided above the Si substrate; a nitride semiconductor layer provided above the SiC layer; a source electrode and a drain electrode provided above the nitride semiconductor layer; a gate electrode in contact with the nitride semiconductor layer; an intermediate layer provided in an opening that creates an opening in the SiC layer and the nitride semiconductor layer; a metal layer provided above the opening so as to cover the intermediate layer; and a conductor that is provided inside a through via that penetrates the intermediate layer and the Si substrate and is electrically connected with the back electrode and the metal layer. The intermediate layer is a metal nitride layer or a silicon oxide layer.
1. A semiconductor device comprising:
a Si substrate;
a back electrode provided below the Si substrate;
a SiC layer provided above the Si substrate;
a semiconductor layer provided above the SiC layer and made of a group III nitride semiconductor;
a source electrode and a drain electrode provided above the semiconductor layer;
a gate electrode in contact with the semiconductor layer;
an intermediate layer provided in an opening that is formed in at least the SiC layer;
a metal layer provided above the opening; and
a conductor provided inside a through via that passes through the intermediate layer and the Si substrate, and electrically connected with the back electrode and the metal layer, wherein
the metal layer covers the through via,
the intermediate layer is provided between the SiC layer and the conductor,
the intermediate layer is a metal nitride layer or a silicon oxide layer,
the opening has a bottom from which the Si substrate is exposed, and
the intermediate layer is separated from the back electrode.
2. The semiconductor device according to claim 1 , wherein
a side surface of the through via inclines with respect to a normal direction of the substrate, and
a top area of the through via in contact with the metal layer is smaller than a bottom area of the through via in contact with the back electrode.
3. The semiconductor device according to claim 1 , wherein the intermediate layer includes a group III nitride semiconductor.
4. The semiconductor device according to claim 3 , wherein
the intermediate layer has an upper surface that is substantially flush with an upper surface of the semiconductor layer.
5. The semiconductor device according to claim 1 , wherein
the metal layer contains at least one metal selected from among Cu, Au, Pt, Ni, and Mo.
6. The semiconductor device according to claim 1 , wherein
the metal layer contains at least one metal selected from among W, Ti, and Ta.
7. The semiconductor device according to claim 1 , wherein
the metal layer and the source electrode are electrically connected.
8. The semiconductor device according to claim 1 , wherein
the source electrode is provided above a source area in the semiconductor layer, and
the through via is provided in the source area.
9. The semiconductor device according to claim 1 , wherein
the metal layer has a lowermost surface whose width is greater than an opening width in an uppermost surface of the through via.
10. The semiconductor device according to claim 1 , further comprising:
a metal diffusion prevention film that covers a side surface of the conductor and directly contacts the conductor, the intermediate layer and the substrate.