IP Library › Granted Patent US 12,463,150
Granted Patent B2
US 12,463,150 · App. 18/637,539 · Granted Nov 4, 2025

Bonding structures in semiconductor packaged device and method of forming same

Inventors: Hao Chun Liu (Hsinchu, TW); Ching-Wen Hsiao (Hsinchu, TW); Kuo-Ching Hsu (Chung-Ho, TW); Mirng-Ji Lii (Sinpu Township, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01L23/562H01L21/563H01L21/78H01L23/3185H01L23/585H01L24/11H01L24/13H01L24/16H01L24/81H01L2224/1146H01L2224/11849H01L2224/13026H01L2224/16227H01L2224/81815H01L2924/35121
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Quick Facts
Patent No.
US 12,463,150
App. No.
18/637,539
Granted
Nov 4, 2025
Kind
B2
Abstract

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a die structure including a plurality of die regions and a plurality of first seal rings. Each of the plurality of first seal rings surrounds a corresponding die region of the plurality of die regions. The semiconductor device further includes a second seal ring surrounding the plurality of first seal rings and a plurality of connectors bonded to the die structure. Each of the plurality of connectors has an elongated plan-view shape. A long axis of the elongated plan-view shape of each of the plurality of connectors is oriented toward a center of the die structure.

Claims (35)

1 . A device comprising:

a substrate, the substrate having a center region at an intersection of diagonals of the substrate in a plan view; and

a plurality of die structures attached to the substrate, each of the plurality of die structures comprising a plurality of connectors bonded to the substrate, each of the plurality of connectors having an elongated plan-view shape, a long axis of the elongated plan-view shape of each of the plurality of connectors being oriented toward the center region of the substrate, wherein the center region of the substrate is offset from at least one of the die structures of the plurality of die structures.

2 . The device of claim 1 , wherein a first die of the plurality of die structures overlaps the center region of the substrate in the plan view.

3 . The device of claim 1 , wherein the plurality of die structures comprise a first die and a second die adjacent the first die, wherein the long axis of the elongated plan-view shape of the plurality of connectors of the first die intersects the long axis of the elongated plan-view shape of the plurality of connectors of the second die at a location outside a perimeter of the first die and a perimeter of the second die in the plan view.

4 . The device of claim 1 , wherein one or more of the die structures of the plurality of die structures each comprise a seal ring.

5 . The device of claim 1 , wherein none of the plurality of die structures overlaps the center region of the substrate in the plan view.

6 . The device of claim 1 , wherein each of the plurality of connectors comprises:

a conductive pillar; and

a solder layer over the conductive pillar.

7 . The device of claim 1 , wherein the plurality of die structures comprises a first die and a second die, wherein the first die is larger than the second die in the plan view.

8 . A device comprising:

a substrate, the substrate having a center region at an intersection of diagonals of the substrate in a plan view; and

a die structure attached to the substrate, the die structure comprising a plurality of die regions, each of the die regions comprising a plurality of connectors attached to the substrate, each of the connectors having an elongated plan-view shape, a long axis of the elongated plan-view shape of each of the plurality of connectors being oriented toward the center region of the substrate, wherein the center region of the substrate is offset from a center region of the die structure.

9 . The device of claim 8 , further comprising:

a semiconductor device attached to the substrate adjacent to the die structure.

10 . The device of claim 8 , wherein the center region of the substrate is spaced apart from the die structure in the plan view.

11 . The device of claim 8 , wherein the die structure further comprises:

a plurality of first seal rings, each first seal ring of the plurality of first seal rings extending along a perimeter of a corresponding die region of the plurality of die regions.

12 . The device of claim 11 , wherein the die structure further comprises:

a second seal ring extending along a perimeter of the die structure.

13 . The device of claim 12 , wherein the second seal ring encircles the plurality of first seal rings in the plan view.

14 . A device comprising:

a first substrate, the first substrate having a center region at an intersection of diagonals of the first substrate in a plan view; and

a die structure attached to the first substrate, the die structure comprising:

a second substrate,

a plurality of die regions on the second substrate,

first seal rings on the second substrate, each of the first seal rings surrounding a corresponding one of the die regions in the plan view,

a second seal ring surrounding the first seal rings in the plan view, and

a plurality of connectors attached to the first substrate, each of the connectors having an elongated plan-view shape, a long axis of the elongated plan-view shape of each of the plurality of connectors being oriented toward the center region of the first substrate, the center region of the first substrate being offset from a center region of the second substrate in the plan view.

15 . The device of claim 14 , wherein each connector of the plurality of connectors comprises a conductive pillar.

16 . The device of claim 15 , wherein the die structure is coupled to the first substrate using solder connections.

17 . The device of claim 14 , wherein the die structure overlaps the center region of the first substrate in the plan view.

18 . The device of claim 14 , further comprising a semiconductor device attached to the first substrate, wherein the die structure is spaced apart from the semiconductor device.

19 . The device of claim 14 , wherein the plurality of die regions comprises die regions of different sizes.

Continuity (4)
Continuation 17813069 · Jul 18, 2022
Division 16265136 · Feb 1, 2019
Provisional Application 62737531 · Sep 27, 2018
Related Publication 20240266304A1 · Aug 8, 2024
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