Nanowire light emitting devices
An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm 2 ), which is over one order of magnitude lower than that of previously reported blue laser diodes.
1 . A light emitting device including a plurality of nanowires, the nanowires comprising:
a n-doped gallium nitride (n-GaN) cladding layer;
a heterostructure region comprising a semipolar plane disposed on the n-GaN cladding layer; and
a p-doped gallium nitride (p-GaN) cladding layer disposed on the heterostructure region;
wherein the plurality of nanowires have a photonic crystalline structure with a reciprocal latter comprising six equivalent and coupled Brillouin zone gamma points; and
wherein the plurality of nanowires have predetermined size and spacing.
2 . The light emitting device of claim 1 , wherein the heterostructure region comprises an indium gallium nitride (InGaN) and aluminum gallium nitride (AlGaN) core-shell heterostructure.
3 . The light emitting device of claim 2 , wherein the indium gallium nitride (InGaN) and aluminum gallium nitride (AlGaN) core-shell heterostructure comprises a plurality of InGaN quantum disks.
4 . The light emitting device of claim 3 , wherein an aluminum rich AlGaN shell layer is disposed on sidewalls of the plurality of InGaN quantum disks.
5 . The light emitting device of claim 1 , wherein the heterostructure region comprises aluminum gallium nitride (AlGaN) shell layers and indium gallium nitride (InGaN) quantum disks, and wherein the InGaN quantum disks are interleaved with the AlGaN shell layers.
6 . The light emitting device of claim 1 , wherein the plurality of nanowires are arranged in a triangular lattice.
7 . The light emitting device of claim 1 , wherein the plurality of nanowires have a hexagonal shape.
8 . The light emitting device of claim 1 , wherein the semipolar plane comprises a gallium polarity (Ga-polarity).
9 . The light emitting device of claim 1 , wherein the plurality of nanowires are operable for emitting stimulated emission light having a wavelength in a range of 520-560 nanometers at a current density that is at least an order of magnitude less than ten kiloamperes per square centimeter (10 kA/cm 2 ).
10 . The light emitting device of claim 1 , wherein the heterostructure is cone-shaped and is narrower as distance from the n-GaN cladding layer increases.
11 . A light emitting device comprising:
a substrate; and
a plurality of nanowires, wherein the plurality of nanowires comprise;
a first cladding layer having a first doping type;
a heterostructure region comprising a semipolar plane disposed on the first cladding layer; and
a second cladding layer having a second doping type disposed on the heterostructure;
wherein the plurality of nanowires have a photonic crystalline structure with a reciprocal latter comprising six equivalent and coupled Brillouin zone gamma points; and
wherein the plurality of nanowires have a predetermined size and spacing in an array.
12 . The light emitting device of claim 11 , wherein the plurality of nanowires have an optical cavity structure configured to form a standing wave without a dynamic Bragg reflector.
13 . The light emitting device of claim 11 , wherein the plurality of nanowires are arranged in a triangular lattice.
14 . The light emitting device of claim 11 , wherein the plurality of nanowires have a hexagonal shape.
15 . The light emitting device of claim 11 , wherein the heterostructure region comprises quantum disks and shell layers interleaved between the quantum disks.
16 . The light emitting device of claim 15 , wherein the heterostructure region further comprises shell layers disposed on sidewalls of the quantum disks.
17 . The light emitting device of claim 15 , wherein:
the quantum disks comprise indium gallium nitride (InGaN) quantum disks;
the shell layers comprise aluminum gallium nitride (AlGaN) shell layers;
the first cladding layer comprises a n-doped gallium nitride (n-GaN) cladding layer; and
the second cladding layer comprises a p-doped gallium nitride (p-GaN) cladding layer.
18 . The light emitting device of claim 17 , wherein the semipolar plane comprises a gallium polarity (Ga-polarity).
19 . The light emitting device of claim 11 , wherein the plurality of nanowires comprise a nanocrystal surface-emitting laser (NCSEL) diode.