IP Library Granted Patent US 12,464,739
Granted Patent B2
US 12,464,739 · App. 17/856,785 · Granted Nov 4, 2025

Micro-scale passive device with particles in insulator layer

Inventors: Sombel Diaham (Villeneuve les Bouloc, FR); Baoxing Chen (Westford, MA)
Assignee: Analog Devices International Unlimited Company
H10D1/692H01L23/5223H01L23/5227H10D1/20
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Quick Facts
Patent No.
US 12,464,739
App. No.
17/856,785
Granted
Nov 4, 2025
Kind
B2
Abstract

Micro-scale passive devices, such as transformers and capacitors, having an insulator layer with insulative particles and/or conductive or nonlinear conductive particles disposed therein. The insulative particles disposed in the insulator layer can increase a breakdown electric field of the device, and the conductive or nonlinear conductive particles disposed in the insulator layer can reduce a maximum electric field of the device. Increasing the breakdown electric field of the device and/or reducing the maximum electric field of the device can increase the lifespan of a micro-scale passive device, and/or may allow the device to operate at a higher threshold electric field without breakdown of the device.

Claims (34)

1 . An isolated micro-scale passive device comprising:

a first conductor and a second conductor formed on a substrate;

a first insulator layer disposed over the first conductor;

a second insulator layer disposed at least partially between the first insulator layer and the second conductor; and

a plurality of conductive or nonlinear conductive particles embedded in at least a portion of the second insulator layer, wherein:

a first portion of the second insulator layer has a first conductivity; and

the plurality of conductive or nonlinear conductive particles define a second portion of the second insulator layer with a second conductivity greater than the first conductivity.

2 . The isolated micro-scale passive device of claim 1 , wherein at least a subset of the plurality of conductive or nonlinear conductive particles are disposed between the first conductor and the second conductor.

3 . The isolated micro-scale passive device of claim 1 , comprising a third insulator layer disposed over the second conductor with an additional plurality of conductive or nonlinear conductive particles disposed in the third insulator layer.

4 . The isolated micro-scale passive device of claim 1 , further comprising a plurality of insulative particles embedded in at least one of the first insulator layer or the second insulator layer.

5 . The isolated micro-scale passive device of claim 4 , wherein:

at least a subset of the plurality of insulative particles form an isolation layer between the first conductor and the second conductor; and

at least a subset of the plurality of conductive or nonlinear conductive particles form a barrier layer of the second conductor.

6 . The isolated micro-scale passive device of claim 1 , wherein the plurality of conductive or nonlinear conductive particles comprise at least one of SiC, ZnO, Ag 2 C 2 , graphene, carbon nanotubes, or a negative temperature coefficient (NTC) material.

7 . The isolated micro-scale passive device of claim 1 , wherein the plurality of conductive or nonlinear conductive particles have a size between 1 nm and 1 um.

8 . The isolated micro-scale passive device of claim 1 , wherein the plurality of conductive or nonlinear conductive particles have a conductivity between 1×10 −8 S/m and 100 MS/m.

9 . The isolated micro-scale passive device of claim 1 , wherein the plurality of conductive or nonlinear conductive particles have a particle-to-particle distance in the second insulator layer such that conductivity of at least the second insulator layer having the plurality of conductive or nonlinear conductive particles embedded therein is below a percolation threshold.

10 . The isolated micro-scale passive device of claim 1 , wherein:

the first conductor is patterned as a first coil; and

the second conductor is patterned as a second coil.

11 . The isolated micro-scale passive device of claim 1 , wherein:

the first conductor is disposed in a first plane; and

the second conductor is disposed in a second plane parallel to the first plane, the second plane different than the first plane.

12 . The isolated micro-scale passive device of claim 1 , wherein:

at least a portion of the first conductor is disposed in a first plane; and

at least a portion of the second conductor is disposed in the first plane.

13 . An isolated micro-scale passive device comprising:

a first conductor and a second conductor formed on a substrate; and

means for increasing, between the first conductor and the second conductor, a threshold electric field for operating without breakdown of the isolated micro-scale passive device, wherein the means for increasing the threshold electric field for operating without breakdown includes a first insulator layer disposed over the first conductor and a second insulator layer disposed at least partially between the first insulator layer and the second conductor.

14 . The isolated micro-scale passive device of claim 13 , wherein the means for increasing the threshold electric field for operating without breakdown is configured to reduce a maximum electric field of the isolated micro-scale passive device.

15 . The isolated micro-scale passive device of claim 13 , wherein the means for increasing the threshold electric field for operating without breakdown comprises a plurality of conductive or nonlinear conductive particles embedded in the second insulator layer disposed between the first conductor and the second conductor, wherein:

a first portion of the second insulator layer has a first conductivity; and

the plurality of conductive or nonlinear conductive particles define a second portion of the second insulator layer with a second conductivity greater than the first conductivity.

16 . The isolated micro-scale passive device of claim 15 , wherein the means for increasing the threshold electric field for operating without breakdown further comprises a plurality of insulative particles embedded in at least one of the first insulator layer or the second insulator layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2022
From: DIAHAM, SOMBEL; CHEN, BAOXING
To: ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANY
Reel/Frame 061264/0518 →
Continuity (1)
Related Publication 20240006469A1 · Jan 4, 2024
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