Method for manufacturing image display device and image display device
A method for manufacturing an image display device according to an embodiment includes preparing a structure including a semiconductor layer formed on a first substrate, bonding the semiconductor layer to a first surface of a second substrate, removing the first substrate, forming a light-emitting element including a light-emitting surface opposite to a bottom surface on the first surface by etching the semiconductor layer, forming a first insulating film that covers the first surface and the light-emitting element, forming a circuit element on the first insulating film, forming a second insulating film that covers the circuit element and the first insulating film, exposing a surface including the light-emitting surface by removing a portion of the first and second insulating films, forming a via extending through the first and second insulating films, and forming a wiring layer on the second insulating film.
1 . A method for manufacturing an image display device, the method comprising:
preparing at least one structure comprising a semiconductor layer formed on a first substrate, the semiconductor layer including a light-emitting layer;
bonding the semiconductor layer to a first surface of a second substrate;
removing the first substrate;
forming a light-emitting element by etching the semiconductor layer, the light-emitting element including a bottom surface on the first surface, and a light-emitting surface located opposite to the bottom surface;
forming a first insulating film that covers the first surface and the light-emitting element;
forming a circuit element on the first insulating film;
forming a second insulating film that covers the circuit element and the first insulating film;
exposing a surface that includes the light-emitting surface by removing a portion of the first insulating film and a portion of the second insulating film;
forming a via that extends through the first and second insulating films; and
forming a wiring layer on the second insulating film, wherein
the light-emitting element comprises a connection part formed on the first surface, and
the via is located between the wiring layer and the connection part and electrically connects the wiring layer and the connection part.
2 . The method for manufacturing the image display device according to claim 1 , the method further comprising:
before the step of bonding the semiconductor layer to the first surface, forming a light-reflective layer on the first surface; and
forming an insulating layer on the light-reflective layer.
3 . The method for manufacturing the image display device according to claim 2 , wherein:
the light-reflective layer comprises a first part that is light-reflective,
the light-emitting element is formed on the first part, and
in a plan view, an outer perimeter of the first part includes an outer perimeter of the light-emitting element when the light-emitting element is projected onto the first part.
4 . The method for manufacturing the image display device according to claim 1 , wherein:
in the step of preparing the at least one structure, a plurality of the structures are prepared, and
the step of bonding the semiconductor layer to the second substrate comprises bonding the semiconductor layers of the plurality of structures to the single second substrate.
5 . The method for manufacturing the image display device according to claim 1 , wherein:
the second substrate comprises a light-transmitting substrate.
6 . The method for manufacturing the image display device according to claim 5 , wherein:
the second substrate further comprises a third substrate located on the light-transmitting substrate,
the third substrate is flexible, and
the step of bonding the semiconductor layer to the second substrate comprises, after bonding the semiconductor layer to the third substrate, removing the light-transmitting substrate.
7 . The method for manufacturing the image display device according to claim 1 , wherein:
the semiconductor layer comprises an n-type semiconductor layer, the light-emitting layer, and a p-type semiconductor layer, stacked in this order from a first substrate side, and
the p-type semiconductor layer includes the connection part.
8 . The method for manufacturing the image display device according to claim 1 , the method further comprising:
forming a light-transmitting electrode at the exposed light-emitting surface.
9 . The method for manufacturing the image display device according to claim 1 , wherein:
the semiconductor layer comprises a gallium nitride compound semiconductor.
10 . The method for manufacturing the image display device according to claim 1 , the method further comprising:
forming a wavelength conversion member on the light-emitting element.
11 . An image display device, comprising:
a substrate including a first surface;
a light-emitting element including a bottom surface on the first surface, and a light-emitting surface opposite to the bottom surface;
a first insulating film covering the first surface and a lateral surface of the light-emitting element;
a circuit element located on the first insulating film;
a second insulating film covering the circuit element and the first insulating film;
a via provided to extend through the first and second insulating films; and
a wiring layer located on the second insulating film, wherein:
the light-emitting element comprises a connection part formed on the first surface, and
the via is located between the wiring layer and the connection part and electrically connects the wiring layer and the connection part.
12 . The image display device according to claim 11 , wherein:
the substrate comprises a light-transmitting substrate.
13 . The image display device according to claim 11 , wherein:
the substrate includes a substrate that is flexible.
14 . The image display device according to claim 11 , further comprising:
a light-reflective layer located on the first surface; and
an insulating layer covering the light-reflective layer.
15 . The image display device according to claim 14 , wherein:
the light-reflective layer comprises a first part,
the light-emitting element is located on the first part, and
in a plan view, an outer perimeter of the first part includes an outer perimeter of the light-emitting element when the light-emitting element is projected onto the first part.
16 . The image display device according to claim 11 , wherein:
the light-emitting element comprises a first semiconductor layer of a first conductivity type, a light-emitting layer, and a second semiconductor layer of a second conductivity type, stacked in this order from the first surface toward the light-emitting surface, the second conductivity type is different from the first conductivity type, and
the first semiconductor layer comprises the connection part.
17 . The image display device according to claim 16 , wherein:
the wiring layer comprises:
a first wiring portion connected to the via, and
a second wiring portion connected to a surface including the light-emitting surface, and
the second semiconductor layer is electrically connected to the circuit element via the second wiring portion and the surface including the light-emitting surface.
18 . The image display device according to claim 16 , wherein:
the wiring layer comprises:
a third wiring portion connected to the via, and
a fourth wiring portion connected to a surface including the light-emitting surface, and
the first semiconductor layer is electrically connected to the circuit element by the via and the third wiring portion.
19 . The image display device according to claim 16 , wherein:
the first conductivity type is a p-type, and
the second conductivity type is an n-type.
20 . The image display device according to claim 16 , further comprising:
a light-transmitting electrode located on the light-emitting surface, wherein:
the second semiconductor layer is connected to the wiring layer via the light-transmitting electrode.
21 . The image display device according to claim 11 , wherein:
the light-emitting element comprises a gallium nitride compound semiconductor.
22 . The image display device according to claim 11 , wherein:
the circuit element comprises a thin film transistor.
23 . The image display device according to claim 11 , further comprising:
a wavelength conversion member on the light-emitting element.
24 . An image display device, comprising:
a substrate including a first surface;
a semiconductor layer including a bottom surface on the first surface, a surface opposite to the bottom surface, and a plurality of light-emitting surfaces at the surface,
a first insulating film covering the first surface and a lateral surface of the semiconductor layer;
a plurality of transistors located on the first insulating film;
a second insulating film covering the plurality of transistors and the first insulating film;
a plurality of vias extending through the first and second insulating films; and
a wiring layer located on the second insulating film, wherein:
the semiconductor layer comprises a connection part formed on the first surface, and
the plurality of vias are located between the wiring layer and the connection part and electrically connect the wiring layer and the connection part.
25 . The image display device according to claim 24 , wherein:
the semiconductor layer comprises a first semiconductor layer of a first conductivity type, a light-emitting layer, and a second semiconductor layer of a second conductivity type, stacked in this order from the bottom surface toward the plurality of light-emitting surfaces,
the second conductivity type is different from the first conductivity type, and
the second semiconductor layer is divided by the first insulating film.