Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

1 . A mask blank substrate comprising two opposing main surfaces,

wherein the substrate consists of a glass material containing SiO 2 and TiO 2 ,

wherein the substrate has a first region in one main surface side,

wherein the first region is a region within a 132 mm×104 mm square comprising a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth,

wherein an inner region of the substrate excluding the first region has a locally non-uniform portion,

wherein a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and

wherein a variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.

2 . The mask blank substrate according to claim 1 , wherein the substrate has a second region in the other main surface side, and

wherein the second region is a region within a 132 mm×104 mm square comprising a center portion in the other main surface and which is a region extending from the other main surface toward the one main surface up to a position of 500 μm in depth, and

wherein the second region has the non-uniform portion therein.

3 . The mask blank substrate according to claim 1 , wherein Ti content rate of the substrate excluding the non-uniform portion is 3 mass % or more.

4 . The mask blank substrate according to claim 1 , wherein Ti/Si of the non-uniform portion is less than Ti/Si of the inner region excluding the non-uniform portion.

5 . A substrate with a multilayer reflective film comprising a substrate having two opposing main surfaces and a multilayer reflective film provided on one main surface of the substrate,

wherein the substrate consists of a glass material containing SiO 2 and TiO 2 ,

wherein the substrate has a first region on the one main surface side,

wherein the first region is a region within a 132 mm×104 mm square comprising a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth,

wherein an inner region of the substrate excluding the first region has a locally non-uniform portion,

wherein a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and

wherein a variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.

6 . The substrate with a multilayer reflective film according to claim 5 , wherein the substrate has a second region in the other main surface side,

wherein the second region is a region within a 132 mm×104 mm square comprising a center portion in the other main surface and which is a region extending from the other main surface toward the one main surface up to a position of 500 μm in depth, and

wherein the second region has the non-uniform portion therein.

7 . The substrate with a multilayer reflective film according to claim 5 , wherein Ti content rate of the substrate excluding the non-uniform portion is 3 mass % or more.

8 . The substrate with a multilayer reflective film according to claim 5 , wherein Ti/Si of the non-uniform portion is less than Ti/Si of the inner region excluding the non-uniform portion.

9 . A reflective mask blank comprising a substrate having two opposing main surfaces, a multilayer reflective film provided on one main surface of the substrate, and a thin film for pattern formation provided on the multilayer reflective film,

wherein the substrate consists of a glass material containing SiO 2 and TiO 2 ,

wherein the substrate has a first region on the one main surface side,

wherein the first region is a region within a 132 mm×104 mm square comprising a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth,

wherein an inner region of the substrate excluding the first region has a locally non-uniform portion,

wherein a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and

wherein a variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.

10 . The reflective mask blank according to claim 9 , wherein the substrate has a second region on the other main surface side,

wherein the second region is a region within a 132 mm×104 mm square comprising a center portion in the other main surface and which is a region extending from the other main surface toward the one main surface up to a position of 500 μm in depth, and

wherein the second region has the non-uniform portion therein.

11 . The reflective mask blank according to claim 9 , wherein Ti content rate of the substrate excluding the non-uniform portion is 3 mass % or more.

12 . The reflective mask blank according to claim 9 , wherein Ti/Si of the non-uniform portion is less than Ti/Si of the inner region excluding the non-uniform portion.

13 . A reflective mask comprising a substrate having two opposing main surfaces, a multilayer reflective film provided on one main surface of the substrate, and a thin film provided on the multilayer reflective film and having a transfer pattern,

wherein the substrate consists of a glass material containing SiO 2 and TiO 2 ,

wherein the substrate has a first region on the one main surface side,

wherein the first region is a region within a 132 mm×104 mm square comprising a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth,

wherein an inner region of the substrate excluding the first region has a locally non-uniform portion,

wherein a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and

wherein a variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.

14 . The reflective mask according to claim 13 , wherein the substrate has a second region on the other main surface side,

wherein the second region is a region within a 132 mm×104 mm square comprising a center portion in the other main surface and which is a region extending from the other main surface toward the one main surface up to a position of 500 μm in depth, and

wherein the second region has the non-uniform portion therein.

15 . The reflective mask according to claim 13 , wherein Ti content rate of the substrate excluding the non-uniform portion is 3 mass % or more.

16 . The reflective mask according to claim 13 , wherein Ti/Si of the non-uniform portion is less than Ti/Si of the inner region excluding the non-uniform portion.

17 . A method of manufacturing a semiconductor device comprising transferring the transfer pattern to a resist film on a semiconductor substrate by exposure using the reflective mask according to claim 13 .