Apparatus with refresh management mechanism
Methods, apparatuses, and systems related to managing operations performed in response to refresh management (RFM) commands. A controller generates the RFM command for coordinating a refresh management operation targeted for implementation at an apparatus. The apparatus tracks refresh target set that includes refresh management target locations within the apparatus. According to the tracked refresh management target set, the apparatus selectively implements the targeted refresh management operation and/or a response operation in addition to or as a replacement for the targeted refresh management operation.
1 . A method, comprising:
receiving, at a memory device from a memory controller external to the memory device, a refresh management (RFM) command for refreshing the memory device; and
determining, at the memory device in response to receiving the RFM command, whether to perform a refresh operation on an address of the memory device during a time associated with the RFM command, wherein the time associated with the RFM command comprises a predetermined duration following reception of the RFM command.
2 . The method of claim 1 , wherein the RFM command is received at the memory device via command and address terminals of the memory device that are coupled with a command bus and an address bus.
3 . The method of claim 1 , wherein the memory device comprises dynamic random-access memory (DRAM).
4 . The method of claim 1 , wherein the memory device is a double data rate (DDR) device.
5 . The method of claim 1 , wherein determining whether to perform the refresh operation on the address of the memory device during the time associated with the RFM command is based on one or more counters of the memory device that track row activations of the memory device or column accesses of the memory device.
6 . The method of claim 1 , further comprising:
performing the refresh operation on the address of the memory device during the time associated with the RFM command based on a determination at the memory device that a quantity of activations associated with the address of the memory device since a last refresh operation exceeds a threshold.
7 . The method of claim 1 , further comprising:
performing the refresh operation on the address of the memory device and a second operation of the memory device during the time associated with the RFM command based on a determination at the memory device to perform the refresh operation on the address of the memory device during the time associated with the RFM command.
8 . The method of claim 1 , further comprising:
performing the refresh operation on a first subset of the address of the memory device and refraining from performing the refresh operation on a second subset of the address of the memory device based on first quantity of activations of the first subset of the address tracked by the memory device and a second quantity of activations of the second subset of the address tracked by the memory device.
9 . The method of claim 1 , further comprising:
performing the refresh operation on the address of the memory device at a time different than the time associated with the RFM command based on scheduling performed at the memory device.
10 . The method of claim 1 , further comprising:
refraining from performing the refresh operation on the address of the memory device during the time associated with the RFM command based on a determination at the memory device that the memory device has scheduled refresh of the address of the memory device within a threshold duration of receiving the RFM command.
11 . The method of claim 1 , further comprising:
performing the refresh operation on a second address of the memory device, different from the address of the memory device targeted by the RFM command, during the time associated with the RFM command in response to receiving the RFM command.
12 . The method of claim 1 , further comprising:
refraining from performing the refresh operation on the address of the memory device during the time associated with the RFM command based on a determination by the memory device that a disturbance associated with the RFM command has been addressed by the memory device.
13 . The method of claim 1 , further comprising:
performing, at the memory device during the time associated with the RFM command, an operation different than the refresh operation based on a determination to refrain from performing the refresh operation on the address of the memory device.
14 . The method of claim 13 , wherein the operation different than the refresh operation comprises an error check and scrub operation, an error correction code (ECC) operation, a memory management operation, a calibration operation, or a background operation.
15 . A method, comprising:
receiving, at a memory device from a memory controller external to the memory device, a refresh management (RFM) command for refreshing the memory device; and
performing, at the memory device during a time associated with the RFM command, one or more operations selected by the memory device in response to receiving the RFM command, wherein the time associated with the RFM command comprises a predetermined duration following reception of the RFM command.
16 . An apparatus, comprising:
a memory array of a memory device;
an input circuit of the memory device configured to receive command signals and address signals; and
a refresh control circuit of the memory device configured to determine, in response to the memory device receiving a refresh management (RFM) command via the input circuit, whether to perform a refresh operation on an address of the memory array during a time associated with the RFM command, wherein the time associated with the RFM command comprises a predetermined duration following reception of the RFM command.
17 . The apparatus of claim 16 , wherein the RFM command is received at the memory device via command and address terminals of the memory device that are coupled with a command bus and an address bus.
18 . The apparatus of claim 16 , wherein the memory device comprises dynamic random-access memory (DRAM).