Bit line read current mirroring circuit for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
An in-memory computation circuit includes a memory array with SRAM cells connected in rows by word lines and in columns by bit lines. A row controller circuit simultaneously actuates word lines in parallel for an in-memory compute operation. A column processing circuit includes a current mirroring circuit that mirrors the read current developed on each bit line in response to the simultaneous actuation to generate a decision output for the in-memory compute operation. A bias voltage for word line driver and a configuration of the current mirroring circuit to inhibit drop of a voltage on the bit line below a bit flip voltage during execution of the in-memory compute operation. The mirrored read current is integrated by an integration capacitor to generate an output voltage that is converted to a digital signal by an analog-to-digital converter circuit.
1 . An in-memory computation circuit, comprising:
a memory array including a plurality of memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a first bit line connected to the memory cells of the column;
a word line driver circuit for each row having an output connected to drive the word line of the row, wherein the word line driver circuit has a power supply node connected to receive an adaptive supply voltage having a voltage level that is modulated dependent on integrated circuit process and/or temperature conditions;
a row controller circuit configured to simultaneously actuate the plurality of word lines by applying pulses through the word line driver circuits to the word lines for an in-memory compute operation; and
a column processing circuit including a first read circuit coupled to each first bit line, wherein each first read circuit comprises:
a first current mirroring circuit configured to mirror a first read current on the first bit line to generate a first mirrored read current; and
a first integration capacitor configured to integrate the first mirrored read current to generate a first output voltage;
wherein the adaptive supply voltage and configuration of the first current mirroring circuit inhibits drop of a voltage on the first bit line below a bit flip voltage during the simultaneous actuation of the plurality of word lines for the in-memory compute operation.
2 . The circuit of claim 1 , wherein said column processing circuit further comprises an analog-to-digital converter (ADC) circuit configured to convert the first output voltage to a digital output.
3 . The circuit of claim 1 , wherein said first current mirroring circuit is switchably controlled to output the first mirrored read current in response to assertion of an integration control signal during the in-memory compute operation.
4 . The circuit of claim 1 , wherein said first integration capacitor is discharged in response to assertion of a reset control signal at a beginning of the in-memory compute operation.
5 . The circuit of claim 1 , wherein each memory cell of the memory array is an SRAM cell that is one of a 6T-type or 8T-type memory cell.
6 . An in-memory computation circuit, comprising:
a memory array including a plurality of memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a first bit line connected to the memory cells of the column;
a word line driver circuit for each row having an output connected to drive the word line of the row, wherein the word line driver circuit is powered by an adaptive supply voltage dependent on integrated circuit process and/or temperature conditions;
a row controller circuit configured to simultaneously actuate the plurality of word lines by applying pulses through the word line driver circuits to the word lines for an in-memory compute operation; and
a column processing circuit including a first read circuit coupled to each first bit line, wherein each first read circuit comprises:
a first current mirroring circuit configured to mirror a first read current on the first bit line to generate a first mirrored read current; and
a first integration capacitor configured to integrate the first mirrored read current to generate a first output voltage;
wherein the adaptive supply voltage and configuration of the first current mirroring circuit inhibits drop of a voltage on the first bit line below a bit flip voltage during the simultaneous actuation of the plurality of word lines for the in-memory compute operation; and
a voltage generator circuit configured to generate the adaptive supply voltage which is dependent on integrated circuit process and/or temperature conditions, said voltage generator circuit comprising:
a current source configured to generate a current applied to a first node; and
a series connection of a first transistor and second transistor between the first node and a reference node;
wherein the adaptive supply voltage is generated at said first node;
wherein the first transistor is a replica of a passgate transistor within the memory cell;
wherein the second transistor is a replica of a pull down transistor within the memory cell.
7 . The circuit of claim 6 , wherein:
the current generated by the current source has a magnitude set as a function of a reference current representative of current flowing through the passgate transistor and the pull down transistor for an applicable integrated circuit process corner; and
the magnitude of the current generated by the current source is scaled by a factor applied to the reference current;
wherein the first transistor is scaled by said factor for the replica of the passgate transistor; and
wherein the second transistor is scaled by said factor for the replica of the pull down transistor.
8 . The circuit of claim 6 , further comprising an amplifier circuit having an input coupled to said first node and an output coupled to power the word line driver circuits.
9 . The circuit of claim 6 , wherein the current source is controlled to generate an adjustment to the current, and further comprising a control circuit configured to generate a control signal for application to the current source for modulating a level of the current away from a nominal level in response to an applicable integrated circuit process corner for transistor devices of the memory cells.
10 . The circuit of claim 9 , wherein the applicable integrated circuit process corner is indicated by a programmed code stored in the control circuit.
11 . The circuit of claim 10 , wherein the control circuit includes a lookup table (LUT) correlating the programmed code to a value of the control signal.
12 . The circuit of claim 9 , wherein the control circuit further comprises a temperature sensor, and wherein the control signal is configured to cause a temperature dependent tuning of the level of the current set in response to applicable integrated circuit process corner.
13 . The circuit of claim 12 , wherein the control circuit includes a lookup table (LUT) correlating sensed integrated circuit temperature to a tuning level for the value of the control signal.
14 . The circuit of claim 6 , wherein said column processing circuit further comprises an analog-to-digital converter (ADC) circuit configured to convert the first output voltage to a digital output.
15 . The circuit of claim 6 , wherein said first current mirroring circuit is switchably controlled to output the first mirrored read current in response to assertion of an integration control signal during the in-memory compute operation.
16 . The circuit of claim 6 , wherein said first integration capacitor is discharged in response to assertion of a reset control signal at a beginning of the in-memory compute operation.
17 . The circuit of claim 6 , wherein each memory cell of the memory array is an SRAM cell that is one of a 6T-type or 8T-type memory cell.
18 . The circuit of claim 6 , wherein the adaptive supply voltage has a voltage level that is modulated dependent on integrated circuit process and/or temperature conditions.
19 . An in-memory computation circuit, comprising:
a memory array including a plurality of memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a first bit line connected to the memory cells of the column;
a word line driver circuit for each row having an output connected to drive the word line of the row, wherein the word line driver circuit is powered by an adaptive supply voltage dependent on integrated circuit process and/or temperature conditions;
a row controller circuit configured to simultaneously actuate the plurality of word lines by applying pulses through the word line driver circuits to the word lines for an in-memory compute operation; and
a column processing circuit including a first read circuit coupled to each first bit line, wherein each first read circuit comprises:
a first current mirroring circuit configured to mirror a first read current on the first bit line to generate a first mirrored read current; and
a first integration capacitor configured to integrate the first mirrored read current to generate a first output voltage;
wherein the adaptive supply voltage and configuration of the first current mirroring circuit inhibits drop of a voltage on the first bit line below a bit flip voltage during the simultaneous actuation of the plurality of word lines for the in-memory compute operation;
wherein the first current mirroring circuit comprises:
a first MOS transistor having a drain and gate directly connected to the first bit line to receive the first read current; and
a second MOS transistor having a gate directly connected to the gate of the first MOS transistor and a drain configured to output the first mirrored read current;
wherein said first MOS transistor is sized to conduct the first read current without the voltage on the first bit line dropping below the bit flip voltage during the simultaneous actuation of the plurality of word lines.
20 . The circuit of claim 19 , wherein said column processing circuit further comprises an analog-to-digital converter (ADC) circuit configured to convert the first output voltage to a digital output.
21 . The circuit of claim 19 , wherein said first current mirroring circuit is switchably controlled to output the first mirrored read current in response to assertion of an integration control signal during the in-memory compute operation.
22 . The circuit of claim 19 , wherein said first integration capacitor is discharged in response to assertion of a reset control signal at a beginning of the in-memory compute operation.
23 . The circuit of claim 19 , wherein each memory cell of the memory array is an SRAM cell that is one of a 6T-type or 8T-type memory cell.
24 . The circuit of claim 19 , wherein the adaptive supply voltage has a voltage level that is modulated dependent on integrated circuit process and/or temperature conditions.
25 . An in-memory computation circuit, comprising:
a memory array including a plurality of memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a first bit line connected to the memory cells of the column;
a word line driver circuit for each row having an output connected to drive the word line of the row, wherein the word line driver circuit is powered by an adaptive supply voltage dependent on integrated circuit process and/or temperature conditions;
a row controller circuit configured to simultaneously actuate the plurality of word lines by applying pulses through the word line driver circuits to the word lines for an in-memory compute operation; and
a column processing circuit including a first read circuit coupled to each first bit line, wherein each first read circuit comprises:
a first current mirroring circuit configured to mirror a first read current on the first bit line to generate a first mirrored read current; and
a first integration capacitor configured to integrate the first mirrored read current to generate a first output voltage;
wherein the adaptive supply voltage and configuration of the first current mirroring circuit inhibits drop of a voltage on the first bit line below a bit flip voltage during the simultaneous actuation of the plurality of word lines for the in-memory compute operation;
wherein each column further includes a second bit line connected to the memory cells of the column, and wherein the column processing circuit further includes a second read circuit coupled to each second bit line, wherein each second read circuit comprises:
a second current mirroring circuit configured to mirror a second read current on the second bit line to generate a second mirrored read current; and
a second integration capacitor configured to integrate the second mirrored read current to generate a second output voltage;
wherein the adaptive supply voltage and configuration of the second current mirroring circuit inhibits drop of a voltage on the second bit line below the bit flip voltage during the simultaneous actuation of the plurality of word lines for the in-memory compute operation.
26 . The circuit of claim 25 , wherein said column processing circuit further comprises an analog-to-digital converter (ADC) circuit configured to convert a difference between the first and second output voltages to a digital output.
27 . The circuit of claim 25 , wherein the second current mirroring circuit comprises:
a first MOS transistor having a drain and gate directly connected to the second bit line to receive the second read current; and
a second MOS transistor having a gate directly connected to the gate of the first MOS transistor and a drain configured to output the second mirrored read current;
wherein said first MOS transistor is sized to conduct the second read current without the voltage on the second bit line dropping below the bit flip voltage during the simultaneous actuation of the plurality of word lines.
28 . The circuit of claim 25 , wherein said first and second current mirroring circuits are switchably controlled to output the first and second mirrored read currents, respectively, in response to assertion of an integration control signal during the in-memory compute operation.
29 . The circuit of claim 25 , wherein said first and second integration capacitors are discharged in response to assertion of a reset control signal at a beginning of the in-memory compute operation.
30 . The circuit of claim 25 , wherein said first current mirroring circuit is switchably controlled to output the first mirrored read current in response to assertion of an integration control signal during the in-memory compute operation.
31 . The circuit of claim 25 , wherein said first integration capacitor is discharged in response to assertion of a reset control signal at a beginning of the in-memory compute operation.
32 . The circuit of claim 25 , wherein each memory cell of the memory array is an SRAM cell that is one of a 6T-type or 8T-type memory cell.
33 . The circuit of claim 25 , wherein the adaptive supply voltage has a voltage level that is modulated dependent on integrated circuit process and/or temperature conditions.
34 . An in-memory computation circuit, comprising:
a memory array including a plurality of memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a first bit line connected to the memory cells of the column;
a word line driver circuit for each row having an output connected to drive the word line of the row, wherein the word line driver circuit is powered by an adaptive supply voltage dependent on integrated circuit process and/or temperature conditions;
a row controller circuit configured to simultaneously actuate the plurality of word lines by applying pulses through the word line driver circuits to the word lines for an in-memory compute operation; and
a column processing circuit including a first read circuit coupled to each first bit line, wherein each first read circuit comprises:
a first current mirroring circuit configured to mirror a first read current on the first bit line to generate a first mirrored read current; and
a first integration capacitor configured to integrate the first mirrored read current to generate a first output voltage;
wherein the adaptive supply voltage and configuration of the first current mirroring circuit inhibits drop of a voltage on the first bit line below a bit flip voltage during the simultaneous actuation of the plurality of word lines for the in-memory compute operation;
wherein each column further includes a second bit line connected to the memory cells of the column, and wherein the column processing circuit further includes a second read circuit coupled to each second bit line, wherein each second read circuit comprises:
a second current mirroring circuit configured to mirror a second read current on the second bit line to generate a second mirrored read current;
wherein said first integration capacitor configured to integrate a difference between the first and second mirrored read currents to generate the first output voltage;
wherein the adaptive supply voltage and configuration of the second current mirroring circuit inhibits drop of a voltage on the second bit line below the bit flip voltage during the simultaneous actuation of the plurality of word lines for the in-memory compute operation.
35 . The circuit of claim 34 , wherein said column processing circuit further comprises an analog-to-digital converter (ADC) circuit configured to convert the first output voltage to a digital output.
36 . The circuit of claim 34 , wherein the second current mirroring circuit comprises:
a first MOS transistor having a drain and gate directly connected to the second bit line to receive the second read current; and
a second MOS transistor having a gate directly connected to the gate of the first MOS transistor and a drain configured to output the second mirrored read current;
wherein said first MOS transistor is sized to conduct the second read current without the voltage on the second bit line dropping below the bit flip voltage during the simultaneous actuation of the plurality of word lines.
37 . The circuit of claim 34 , wherein said first and second current mirroring circuits are switchably controlled to output the first and second mirrored read currents, respectively, in response to assertion of an integration control signal during the in-memory compute operation.
38 . The circuit of claim 34 , wherein said first integration capacitor is discharged in response to assertion of a reset control signal at a beginning of the in-memory compute operation.
39 . The circuit of claim 34 , wherein said first current mirroring circuit is switchably controlled to output the first mirrored read current in response to assertion of an integration control signal during the in-memory compute operation.
40 . The circuit of claim 34 , wherein said first integration capacitor is discharged in response to assertion of a reset control signal at a beginning of the in-memory compute operation.
41 . The circuit of claim 34 , wherein each memory cell of the memory array is an SRAM cell that is one of a 6T-type or 8T-type memory cell.
42 . The circuit of claim 34 , wherein the adaptive supply voltage has a voltage level that is modulated dependent on integrated circuit process and/or temperature conditions.