Plasma processing method and plasma processing apparatus
A plasma processing method includes: a) providing a substrate on a substrate support; b) supplying a process gas; c) periodically supplying a pulse voltage to the substrate support; and d) periodically supplying RF power and generating plasma from the process gas to etch a silicon-containing film included in the substrate. The pulse voltage is negative. A first period in which a first pulse voltage is supplied and a second period in which the pulse voltage is not supplied or a second pulse voltage whose absolute value is less than that of the first pulse voltage is supplied are repeated in c). A third period in which first RF power is supplied and a fourth period in which the RF power is not supplied or second RF power less than the first RF power is supplied are repeated in d). The first period starts before a start of the third period.
1 . A plasma processing method comprising:
a) providing a substrate on a substrate support in a plasma processing chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film;
b) supplying a process gas into the plasma processing chamber;
c) periodically supplying a pulse voltage to the substrate support; and
d) periodically supplying radio frequency (RF) power and generating plasma from the process gas by the RF power to etch the silicon-containing film,
wherein the pulse voltage has a negative polarity,
wherein a first period in which a first pulse voltage is supplied and a second period in which the pulse voltage is not supplied or a second pulse voltage whose absolute value is less than an absolute value of the first pulse voltage is supplied are repeated in c),
wherein a third period in which first RF power is supplied and a fourth period in which the RF power is not supplied or second RF power less than the first RF power is supplied are repeated in d), and
wherein the first period starts before a start of the third period.
2 . The plasma processing method as claimed in claim 1 , wherein the absolute value of the pulse voltage supplied to the substrate support in c) is 0.5 kV or greater and 20 kV or less.
3 . A plasma processing method comprising:
a) providing a substrate on a substrate support in a plasma processing chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film;
b) supplying a process gas into the plasma processing chamber;
c) periodically supplying a pulse voltage to the substrate support; and
d) periodically supplying RF power and generating plasma from the process gas by the RF power to etch the silicon-containing film,
wherein the pulse voltage is supplied to the substrate support to generate a potential difference between the plasma and the substrate,
wherein a first period in which a first pulse voltage is supplied and a second period in which the pulse voltage is not supplied or a second pulse voltage less than the first pulse voltage is supplied are repeated in c),
wherein a third period in which first RF power is supplied and a fourth period in which the RF power is not supplied or second RF power less than the first RF power is supplied are repeated in d), and
wherein the first period starts before a start of the third period.
4 . The plasma processing method as claimed in claim 1 , wherein c) includes performing waveform shaping on a direct-current voltage to obtain a direct-current pulse voltage and supplying the obtained direct-current pulse voltage to the substrate support as the pulse voltage.
5 . The plasma processing method as claimed in claim 1 , wherein the first period starts 1 μsec or greater and 20 μsec or less before the start of the third period.
6 . The plasma processing method as claimed in claim 5 , wherein the first period starts 3 μsec or greater and 14 μsec or less before the start of the third period.
7 . The plasma processing method as claimed in claim 6 , wherein the first period starts 5 μsec or greater and 10 μsec or less before the start of the third period.
8 . The plasma processing method as claimed in claim 1 , wherein a number of waves of the pulse voltage included in a duration from a start of the first period to the start of the third period is 1 or greater and 6 or less.
9 . The plasma processing method as claimed in claim 1 , wherein a first frequency is 100 kHz or greater and 3.2 MHz or less, the first frequency being a reciprocal of a period in which the pulse voltage becomes ON and OFF in the first period.
10 . The plasma processing method as claimed in claim 9 , wherein a first duty ratio is 30% or less, the first duty ratio being a ratio of ON time of the pulse voltage in the first period.
11 . The plasma processing method as claimed in claim 10 , wherein the first duty ratio is 20% or less.
12 . The plasma processing method as claimed in claim 1 , wherein a second frequency is 0.1 kHz or greater and 20 kHz or less, the second frequency being a reciprocal of a period of the first period and the second period in c).
13 . The plasma processing method as claimed in claim 12 , wherein a second duty ratio is 40% or less, the second duty ratio being a ratio of the first period in c).
14 . The plasma processing method as claimed in claim 1 , wherein the pulse voltage has a pulse waveform of a rectangular wave, a triangular wave, an impulse wave, a trapezoidal wave, or a combination thereof.
15 . The plasma processing method as claimed in claim 1 , wherein the silicon-containing film is a silicon oxide film, a silicon nitride film, a silicon germanium film, a silicon carbide film, or a stacked film including two or more thereof.
16 . The plasma processing method as claimed in claim 15 , wherein the silicon-containing film is the silicon oxide film or a stacked film of the silicon oxide film and the silicon nitride film.
17 . The plasma processing method as claimed in claim 1 , wherein the mask is a polysilicon film, a boron-doped silicon film, an organic film, or a tungsten-containing film.
18 . The plasma processing method as claimed in claim 17 , wherein the tungsten-containing film is a tungsten silicide film or a tungsten boron carbide film.