Two-port acoustic wave sensor device
An acoustic wave sensor device comprises a quartz material layer surface; arranged along a first axis, a first interdigitated transducer disposed over the planar surface of the quartz material layer, a first reflection structure disposed over the planar surface of the quartz material layer, and a second reflection structure disposed over the planar surface of the quartz material layer; and arranged along a second axis, a second interdigitated transducer disposed over the planar surface of the quartz material layer, a third reflection structure disposed over the planar surface of the quartz material layer, and a fourth reflection structure disposed over the planar surface of the quartz material layer; and wherein the first axis and the second axis are inclined to each other by a finite angle.
1 . An acoustic wave sensor device, comprising:
a quartz material layer comprising a planar surface;
arranged along a first axis, a first interdigitated transducer disposed over the planar surface of the quartz material layer, a first reflection structure disposed over the planar surface of the quartz material layer, and a second reflection structure disposed over the planar surface of the quartz material layer; and
arranged along a second axis, a second interdigitated transducer disposed over the planar surface of the quartz material layer, a third reflection structure disposed over the planar surface of the quartz material layer, and a fourth reflection structure disposed over the planar surface of the quartz material layer;
and wherein:
the first axis and the second axis are inclined to each other by a finite angle; and
the planar surface of the quartz material layer is defined by a crystal cut of a quartz material of the quartz material layer with angles φ in the range of −14° to −24°, θ in the range of −25° to −45° and ψ in the range of +8° to +28°.
2 . The acoustic wave sensor device of claim 1 , wherein the quartz material layer is a bulk substrate.
3 . The acoustic wave sensor device of claim 2 , further comprising a bulk substrate, and wherein the quartz material layer is disposed over the bulk substrate.
4 . The acoustic wave sensor device of claim 3 , wherein the bulk substrate comprises a silicon or sapphire bulk substrate.
5 . The acoustic wave sensor device of claim 1 , wherein at least one of the first, second, third and fourth reflection structures comprises or consists of a Bragg mirror.
6 . The acoustic wave sensor device of claim 5 , wherein the first reflection structure consists of a first Bragg mirror, the second reflection structure consists of a second Bragg mirror, the third reflection structure consists of a third Bragg mirror and the fourth reflection structure consists of a fourth Bragg mirror, and wherein all of the first, second, third and fourth Bragg mirrors have the same number and/or lengths of electrodes.
7 . The acoustic wave sensor device of claim 5 , wherein the first reflection structure consists of a first Bragg mirror, the second reflection structure consists of a second Bragg mirror, the third reflection structure consists of a third Bragg mirror and the fourth reflection structure consists of a fourth Bragg mirror and electrodes of each of the first, second, third and fourth Bragg mirrors are, respectively,
a) connected to each other; or
b) grounded; or
c) neither connected to each other nor grounded.
8 . The acoustic wave sensor device of claim 1 , wherein the first and second reflection structures are located adjacent to the first interdigitated transducer and the third and fourth reflections structures are located adjacent to the second interdigitated transducer.
9 . The acoustic wave sensor device of claim 1 , wherein:
a first resonance cavity is disposed between the first interdigitated transducer and the first reflection structure and a second resonance cavity is disposed between the first interdigitated transducer and the second reflection structure; and
a third resonance cavity is disposed between the second interdigitated transducer and the third reflection structure and a fourth resonance cavity is disposed between the second interdigitated transducer and the fourth reflection structure.
10 . The acoustic wave sensor device of claim 9 , wherein:
an upper surface of the second resonance cavity comprises a physical and/or chemical modification as compared to an upper surface of the first resonance cavity; and/or
an upper surface of the fourth resonance cavity comprises a physical and/or chemical modification as compared to an upper surface of the third resonance cavity.
11 . The acoustic wave sensor device of claim 10 , wherein the physical and/or chemical modification comprises a metallization layer or passivation layer disposed on the upper surface of the second resonance cavity and/or fourth resonance cavity.
12 . The acoustic wave sensor device of claim 9 , wherein extension lengths of the first resonance cavity and the second resonance cavity differ from each other.
13 . The acoustic wave sensor device of claim 1 , wherein the first and second interdigitated transducers are connected in series or in parallel to each other.
14 . The acoustic wave sensor device of claim 1 , wherein the acoustic wave sensor device is a passive surface acoustic wave sensor device configured for sensing an ambient parameter selected from one of a temperature, chemical species, strain, pressure, torque of a rotating axis, and acceleration or frequency vibration of a vibrating part.
15 . The acoustic wave sensor device of claim 1 , wherein q is in the range of −17° to −22°, θ is in the range of −30° to −40° and ψ is in the range of +10° to +25°.
16 . The acoustic wave sensor device of claim 15 , wherein q is in the range of −19° to −21°, θ is in the range of −33° to −39° and ψ is in the range of +15° to +25°.
17 . The acoustic wave sensor device of claim 1 , wherein the first and second interdigitated transducers have a same number of electrodes and/or a same metallization ratio and/or a same aperture and/or a same tapering and/or lengths of electrodes.