Plasma processing apparatus
A plasma processing apparatus includes a temperature regulator, which includes a plurality of fans and provides a flow path, wherein the flow path is axially or rotationally symmetrical with respect to a central axis and includes a first partial flow path and a second partial flow path, and wherein the first partial flow path extends along an upper surface of an excitation electrode, and the second partial flow path extends alternately in opposite directions between the plurality of fans and the first partial flow path.
1 . A plasma processing apparatus comprising:
a chamber providing a processing space therein;
a substrate support provided in the processing space;
an excitation electrode provided above the substrate support;
an emitter provided to emit electromagnetic waves to a plasma generation space below the excitation electrode, and extending around a central axis of the chamber and the excitation electrode; and
a temperature regulator configured to supply a heat medium along an upper surface of the excitation electrode,
wherein the temperature regulator includes a plurality of fans configured to create a flow of the heat medium, and provides a flow path for the heat medium between each of the plurality of fans and the excitation electrode,
wherein the plurality of fans is arranged above the excitation electrode at equal intervals around the central axis,
wherein the flow path is axially or rotationally symmetrical with respect to the central axis, and includes:
a first partial flow path extending along the upper surface of the excitation electrode; and
a second partial flow path extending alternately in opposite directions between the plurality of fans and the first partial flow path.
2 . The plasma processing apparatus of claim 1 , further comprising a resonator including a first end and a second end, providing a cavity extending from the first end to the second end, configured to resonate electromagnetic waves propagating via the cavity by reflecting the electromagnetic waves at the first end and the second end, and provided above the excitation electrode,
wherein the first end is located above the second end and extends in a circumferential direction around the central axis,
wherein the emitter is disposed to receive the electromagnetic waves from the second end, and
wherein the second partial flow path is formed with the cavity.
3 . The plasma processing apparatus of claim 2 , wherein the cavity and the flow path of the temperature regulator extend alternately in a direction toward the central axis and in a direction away from the central axis to form a plurality of layers.
4 . The plasma processing apparatus of claim 3 , wherein the resonator further includes an outer periphery,
wherein the outer periphery includes a plurality of stages arranged along a vertical direction, and
wherein in the outer periphery, one stage of the plurality of stages, other than an uppermost stage and a lowermost stage, is made of an insulating material.
5 . The plasma processing apparatus of claim 4 , wherein the one stage is constituted by a plurality of pillars arranged along the circumferential direction.
6 . The plasma processing apparatus of claim 5 , wherein each of the plurality of stages, other than the one stage, is constituted by a plurality of metallic pillars arranged along the circumferential direction.
7 . The plasma processing apparatus of claim 6 , wherein the resonator further includes an inner periphery surrounding the central axis,
wherein the resonator forms, as a portion of the flow path, a third partial flow path inward of the inner periphery,
wherein the third partial flow path is connected to the first partial flow path,
wherein the plasma processing apparatus further comprises a heater provided inward of the inner periphery, and
wherein the plurality of fans creates a flow of the heat medium flowing from the third partial flow path to the second partial flow path via the first partial flow path.
8 . The plasma processing apparatus of claim 7 , wherein the excitation electrode includes:
a shower plate provided above the substrate support; and
an upper electrode provided on the shower plate and forming a gas diffusion chamber between the shower plate and the upper electrode,
wherein the plasma processing apparatus further comprises a gas pipe extending in the vertical direction at a location inward of the inner periphery,
wherein the gas pipe is connected to the gas diffusion chamber, and
wherein the heater is located inward of the inner periphery and surrounds the gas pipe.
9 . The plasma processing apparatus of claim 5 , wherein the resonator further includes a cylindrical and metallic shield thin plate surrounding the outer periphery.
10 . The plasma processing apparatus of claim 4 , wherein the one stage is positioned at a location where an antinode of standing waves of the electromagnetic waves is formed in the resonator.
11 . The plasma processing apparatus of claim 3 , further comprising a plurality of plates forming the plurality of layers and arranged alternately with the plurality of layers,
wherein a plurality of slits extending in a radial direction with respect to the central axis and arranged along the circumferential direction is formed in at least one of the plurality of plates.
12 . The plasma processing apparatus of claim 3 , wherein the plurality of fans is connected to an uppermost layer of the plurality of layers, and
wherein a vertical length of the uppermost layer is longer than a vertical length of each of all remaining layers among the plurality of layers.
13 . The plasma processing apparatus of claim 2 , further comprising a conductor provided between the resonator and the excitation electrode to form a gap between the resonator and the excitation electrode, and configured to electrically connect the resonator and the excitation electrode to each other.
14 . The plasma processing apparatus of claim 2 , wherein the resonator further includes an inner periphery surrounding the central axis,
wherein the resonator forms, as a portion of the flow path, a third partial flow path inward of the inner periphery,
wherein the third partial flow path is connected to the first partial flow path,
wherein the plasma processing apparatus further comprises a heater provided inward of the inner periphery, and
wherein the plurality of fans creates a flow of the heat medium flowing from the third partial flow path to the second partial flow path via the first partial flow path.
15 . The plasma processing apparatus of claim 2 , wherein the first partial flow path is provided between the resonator and the excitation electrode,
wherein the excitation electrode includes a plurality of fins forming the first partial flow path, and
wherein the plurality of fins extends in a radial direction with respect to the central axis and is arranged along the circumferential direction.
16 . The plasma processing apparatus of claim 1 , wherein the excitation electrode incorporates a heater in the excitation electrode.
17 . The plasma processing apparatus of claim 1 , wherein the temperature regulator further includes a cooler into which a coolant is supplied, and
wherein the cooler forms a portion of the second partial flow path.