Semiconductor device having deuterium diffused into the substrate and method of manufacturing the same
A method of manufacturing a semiconductor device includes preparing a substrate including cell regions and a scribe lane region, forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface, forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate, bonding a deuterium exchange structure to the second surface of the substrate, implanting deuterium into the deuterium exchange structure using plasma processing, and applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.
1 . A method of manufacturing a semiconductor device, the method comprising:
preparing a substrate including cell regions and a scribe lane region;
forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface;
forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate;
bonding a deuterium exchange structure to the second surface of the substrate;
implanting deuterium into the deuterium exchange structure using plasma processing; and
applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.
2 . The method as claimed in claim 1 , wherein the deuterium exchange structure is formed of a porous metal plate and a hydrogen ion exchange membrane on the porous metal plate.
3 . The method as claimed in claim 2 , wherein the porous metal plate is formed of a porous palladium plate.
4 . The method as claimed in claim 2 , wherein the hydrogen ion exchange membrane is formed of a perfluorinated compound.
5 . The method as claimed in claim 2 , wherein bonding the deuterium exchange structure to the second surface of the substrate includes using a hot press process, such that the hydrogen ion exchange membrane is attached to the second surface of the substrate.
6 . The method as claimed in claim 1 , further comprising, after the deuterium is diffused from the deuterium exchange structure into the substrate, removing the deuterium exchange structure from the second surface of the substrate.
7 . The method as claimed in claim 1 , further comprising, before bonding the deuterium exchange structure to the second surface of the substrate:
bonding an ion exchange structure to the second surface of the substrate;
applying a second voltage to the bias pad, such that impurities diffuse from the second surface of the substrate into the ion exchange structure; and
removing the ion exchange structure from the substrate.
8 . The method as claimed in claim 7 , wherein the ion exchange structure is formed of:
a metal plate including a first region and a second region;
a cation exchange membrane on the first region of the metal plate; and
an anion exchange membrane on the second region of the metal plate.
9 . The method as claimed in claim 8 , wherein the cation exchange membrane includes a polymer having an anion fixed charge, and the anion exchange membrane includes a polymer having a cation fixed charge.
10 . The method as claimed in claim 9 , wherein the anion fixed charge includes at least one of SO 3 − , COO − , PO 3 2− , PO 3 H − , and C 6 H 4 O − , and the cation fixed charge includes at least one of NH 3 + , NRH 2 + , NR 3 H + , NR 3+ , and PR 3+ , where R is hydrocarbon.
11 . The method as claimed in claim 1 , wherein applying the first voltage to the bias pad to have the deuterium diffuse into the substrate includes diffusing a first deuterium content into the substrate, such that the first deuterium content in a first portion of the substrate adjacent to the second surface of the substrate is greater than a second deuterium content in a second portion of the substrate adjacent to the first surface of the substrate.
12 . The method as claimed in claim 1 , wherein forming the bias pad includes forming the bias pad directly in direct contact with the first surface of the substrate in the scribe lane region.
13 . The method as claimed in claim 1 , wherein forming the bias pad includes:
forming an insulating layer on the first surface of the substrate in the scribe lane region, such that the insulating layer has a first thickness; and
forming the bias pad on the insulating layer, such that the insulating layer is between the bias pad and the first surface of the substrate.
14 . A method of manufacturing a semiconductor device, the method comprising:
forming circuit blocks on a substrate, the substrate including a first surface and a second surface;
forming a bias pad on the first surface of the substrate;
bonding a deuterium exchange structure to the second surface of the substrate, the deuterium exchange structure including a porous metal plate and a hydrogen ion exchange membrane on a top surface of the porous metal plate;
implanting deuterium into the deuterium exchange structure using plasma processing; and
diffusing the deuterium from the deuterium exchange structure into the substrate through the second surface of the substrate by applying a first voltage to the bias pad.
15 . The method as claimed in claim 14 , wherein bonding the deuterium exchange structure to the second surface of the substrate includes using a hot press process, such that the hydrogen ion exchange membrane is attached to the second surface of the substrate.
16 . The method as claimed in claim 14 , wherein diffusing the deuterium into the substrate includes diffusing a first deuterium content into the substrate, such that the first deuterium content in a first portion of the substrate adjacent to the second surface of the substrate is greater than a second deuterium content in a second portion of the substrate adjacent to the first surface of the substrate.
17 . The method as claimed in claim 14 , further comprising, before bonding the deuterium exchange structure to the second surface of the substrate:
bonding an ion exchange structure to the second surface of the substrate, the ion exchange structure including a metal plate having a first region and a second region, a cation exchange membrane on the first region, and an anion exchange membrane on the second region; and
diffusing impurities from the second surface of the substrate into the ion exchange structure by applying a second voltage to the bias pad.
18 . The method as claimed in claim 14 , wherein forming the bias pad includes forming the bias pad in direct contact with the first surface of the substrate.
19 . The method as claimed in claim 14 , wherein forming the bias pad includes:
forming an insulating layer on the first surface of the substrate, such that the insulating layer has a first thickness; and
forming the bias pad on the insulating layer, such that the insulating layer is between the bias pad and the first surface of the substrate.
20 . A method of manufacturing a semiconductor device, the method comprising:
forming circuit blocks on a substrate, the substrate including a first surface and a second surface;
forming a bias pad on the first surface of the substrate;
bonding an ion exchange structure to the second surface of the substrate;
diffusing impurities in the substrate from the second surface of the substrate into the ion exchange structure;
removing the ion exchange structure;
bonding a deuterium exchange structure to the second surface of the substrate;
implanting deuterium into the deuterium exchange structure using plasma processing; and
diffusing the deuterium from the deuterium exchange structure into the substrate through the second surface of the substrate.