Semiconductor device
A semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.
1 . A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region of a first transistor and a channel formation region of a second transistor;
a first conductive layer over the oxide semiconductor layer, the first conductive layer comprising a region configured to serve as a gate electrode of the first transistor;
a second conductive layer over the oxide semiconductor layer, the second conductive layer comprising a region configured to serve as a gate electrode of the second transistor;
a first insulating layer over the first conductive layer and the second conductive layer;
a third conductive layer comprising a region in contact with an upper surface of the first insulating layer;
a fourth conductive layer under the oxide semiconductor layer; and
a capacitor electrically connected to the first transistor,
wherein the third conductive layer is electrically connected to one of a source region and a drain region of the first transistor and one of a source region and a drain region of the second transistor;
wherein the third conductive layer is electrically connected to the oxide semiconductor layer through an opening of the first insulating layer,
wherein the oxide semiconductor layer comprises a first region, a second region, and a third region,
wherein the first region and the first conductive layer overlap with each other,
wherein the second region and the second conductive layer overlap with each other,
wherein the third region and the first conductive layer do not overlap with each other,
wherein the third region and the second conductive layer do not overlap with each other,
wherein the third region and the fourth conductive layer overlap with each other, and
wherein the opening of the first insulating layer overlaps with the third region and the fourth conductive layer.
2 . The semiconductor device according to claim 1 ,
wherein c-axes of the oxide semiconductor layer face in a direction substantially perpendicular to a top surface of the oxide semiconductor layer.
3 . The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer comprises In, Ga, and Zn.
4 . The semiconductor device according to claim 1 ,
wherein the third conductive layer is electrically connected to the first transistor and the second transistor.
5 . The semiconductor device according to claim 1 , further comprising:
a fifth conductive layer in contact with the upper surface of the oxide semiconductor layer, the fifth conductive layer comprising a region in contact with the other of the source region and the drain region of the first transistor; and
a sixth conductive layer in contact with the upper surface of the oxide semiconductor layer, the sixth conductive layer comprising a region in contact with the other of the source region and the drain region of the second transistor.
6 . The semiconductor device according to claim 1 , further comprising a second insulating layer between the oxide semiconductor layer and the fourth conductive layer,
wherein the second insulating layer comprises silicon nitride.
7 . A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region of a first transistor and a channel formation region of a second transistor;
a first conductive layer over the oxide semiconductor layer, the first conductive layer comprising a region configured to serve as a gate electrode of the first transistor;
a second conductive layer over the oxide semiconductor layer, the second conductive layer comprising a region configured to serve as a gate electrode of the second transistor;
a first insulating layer over the first conductive layer and the second conductive layer;
a third conductive layer comprising a region in contact with an upper surface of the first insulating layer;
a fourth conductive layer under the oxide semiconductor layer;
a second insulating layer under the fourth conductive layer;
a semiconductor region under the second insulating layer, the semiconductor region comprising a channel formation region of a third transistor; and
a capacitor electrically connected to the first transistor,
wherein the third conductive layer is electrically connected to one of a source region and a drain region of the first transistor and one of a source region and a drain region of the second transistor;
wherein the third conductive layer is electrically connected to the oxide semiconductor layer through an opening of the first insulating layer,
wherein the oxide semiconductor layer comprises a first region, a second region, and a third region,
wherein the first region and the first conductive layer overlap with each other,
wherein the second region and the second conductive layer overlap with each other,
wherein the third region and the first conductive layer do not overlap with each other,
wherein the third region and the second conductive layer do not overlap with each other,
wherein the third region and the fourth conductive layer overlap with each other,
wherein the opening of the first insulating layer overlaps with the third region and the fourth conductive layer, and
wherein the semiconductor region comprises silicon.
8 . The semiconductor device according to claim 7 ,
wherein c-axes of the oxide semiconductor layer face in a direction substantially perpendicular to a top surface of the oxide semiconductor layer.
9 . The semiconductor device according to claim 7 ,
wherein the oxide semiconductor layer comprises In, Ga, and Zn.
10 . The semiconductor device according to claim 7 ,
wherein the third conductive layer is electrically connected to the first transistor and the second transistor.
11 . The semiconductor device according to claim 7 , further comprising:
a fifth conductive layer in contact with the upper surface of the oxide semiconductor layer, the fifth conductive layer comprising a region in contact with the other of the source region and the drain region of the first transistor; and
a sixth conductive layer in contact with the upper surface of the oxide semiconductor layer, the sixth conductive layer comprising a region in contact with the other of the source region and the drain region of the second transistor.
12 . The semiconductor device according to claim 7 , further comprising a third insulating layer between the oxide semiconductor layer and the fourth conductive layer,
wherein the third insulating layer comprises silicon nitride.
13 . A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region of a first transistor and a channel formation region of a second transistor;
a first conductive layer over the oxide semiconductor layer, the first conductive layer comprising a region configured to serve as a gate electrode of the first transistor;
a second conductive layer over the oxide semiconductor layer, the second conductive layer comprising a region configured to serve as a gate electrode of the second transistor;
a first insulating layer over the first conductive layer and the second conductive layer;
a third conductive layer comprising a region in contact with an upper surface of the first insulating layer;
a fourth conductive layer under the oxide semiconductor layer;
a second insulating layer under the fourth conductive layer;
a semiconductor region under the second insulating layer, the semiconductor region comprising a channel formation region of a third transistor; and
a capacitor electrically connected to the first transistor,
wherein the third conductive layer is electrically connected to one of a source region and a drain region of the first transistor and one of a source region and a drain region of the second transistor;
wherein the third conductive layer is electrically connected to the oxide semiconductor layer through an opening of the first insulating layer,
wherein the oxide semiconductor layer comprises a first region, a second region, and a third region,
wherein the first region and the first conductive layer overlap with each other
wherein the second region and the second conductive layer overlap with each other,
wherein the third region and the first conductive layer do not overlap with each other,
wherein the third region and the second conductive layer do not overlap with each other,
wherein the third region and the fourth conductive layer overlap with each other,
wherein the opening of the first insulating layer overlaps with the third region and the fourth conductive layer, and
wherein the semiconductor region comprises single crystal.
14 . The semiconductor device according to claim 13 ,
wherein c-axes of the oxide semiconductor layer face in a direction substantially perpendicular to a top surface of the oxide semiconductor layer.
15 . The semiconductor device according to claim 13 ,
wherein the oxide semiconductor layer comprises In, Ga, and Zn.
16 . The semiconductor device according to claim 13 ,
wherein the third conductive layer is electrically connected to the first transistor and the second transistor.
17 . The semiconductor device according to claim 13 , further comprising:
a fifth conductive layer in contact with the upper surface of the oxide semiconductor layer, the fifth conductive layer comprising a region in contact with the other of the source region and the drain region of the first transistor; and
a sixth conductive layer in contact with the upper surface of the oxide semiconductor layer, the sixth conductive layer comprising a region in contact with the other of the source region and the drain region of the second transistor.
18 . The semiconductor device according to claim 13 , further comprising a third insulating layer between the oxide semiconductor layer and the fourth conductive layer,
wherein the third insulating layer comprises silicon nitride.