Buried gate semiconductor device with reduced gate induced drain leakage
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes a lower gate electrode, an upper gate electrode over the lower gate electrode and a first dielectric layer partially disposed between the lower gate electrode and the upper gate electrode. The lower gate electrode and the upper gate electrode are spaced apart from the substrate by different distances, and the lower gate electrode and the upper gate electrode are configured to receive different voltages.
1 . A semiconductor device, comprising:
a substrate having a trench; and
a gate structure in the trench, wherein the gate structure comprising:
a lower gate electrode;
an upper gate electrode over the lower gate electrode;
a first dielectric layer partially disposed between the lower gate electrode and the upper gate electrode;
a second dielectric layer conformally formed on a bottom surface and a sidewall of the trench and disposed between the lower gate electrode and the substrate, wherein the first dielectric layer is spaced apart from the substrate by the second dielectric layer; and
a capping layer formed on the upper gate electrode, the capping layer being in contact with the first dielectric layer and the upper gate electrode;
wherein the lower gate electrode and the upper gate electrode are spaced apart from the substrate by different distances;
wherein the lower gate electrode and the upper gate electrode are configured to receive different voltages;
wherein a bottom surface of the capping layer is in contact with the upper gate electrode;
wherein a top surface of the capping layer, a top surface of the first dielectric layer, and a top surface of the second dielectric layer are coplanar;
wherein the capping layer and the second dielectric layer are separated by the first dielectric layer.
2 . The semiconductor device of claim 1 , wherein the lower gate electrode and the upper gate electrode are configured to receive different voltages.
3 . The semiconductor device of claim 2 , wherein a voltage of the lower gate electrode is greater than a voltage of the upper gate electrode.
4 . The semiconductor device of claim 2 , wherein a voltage difference between the lower gate electrode and the upper gate electrode is greater than 0.3 volts (V).
5 . The semiconductor device of claim 1 , wherein a density of the second dielectric layer is lower than a density of the first dielectric layer.
6 . The semiconductor device of claim 1 , wherein the first dielectric layer directly contacts the lower gate electrode and the upper gate electrode, wherein a width of the capping layer is the same as a width of the upper gate electrode.
7 . The semiconductor device of claim 1 , wherein the gate structure is disposed in an active region of the substrate.
8 . The semiconductor device of claim 1 , wherein the gate structure is disposed in an isolation region of the substrate.