Patterning method for photonic devices
Methods and apparatus for etching a wafer. The wafer is positioned adjacent to a cathode within a vacuum chamber. The wafer includes a first layer stack, where the first layer stack includes a crystalline composition of a first element and a second element different from the first element. The crystalline composition may be BaTiO3 (BTO). A gas is received that includes a first partial gas and a second partial gas. The first and second partial gases may be HBr and Cl2, respectively. The gas is ionized, and the wafer is chemically etched by bombarding the layer stack with the ionized gas. The chemical etching includes reacting the first partial gas with the first element and reacting the second partial gas with the second element.
1 . A method for etching a wafer, comprising:
positioning the wafer inside a plasma etching chamber, wherein the wafer comprises a layer of barium titanate (BTO);
introducing a gas into the vacuum plasma etching chamber, wherein the gas comprises a mixture of hydrogen bromide (HBr) and chlorine (Cl 2 );
ionizing the HBr and the Cl 2 to produce an ionized gas; and
etching the wafer by bombarding the layer of BTO with the ionized gas to pattern the layer of BTO.
2 . The method of claim 1 , the method further comprising pumping out desorbed by-products of a chemical reaction of the ionized gas with the layer of BTO.
3 . The method of claim 2 , wherein the desorbed by-products comprise barium bromide (BaBr 2 ) and titanium tetrachloride (TiCl 4 ), and wherein the layer of barium titanate consists essentially of barium, titanium and oxygen.
4 . The method of claim 1 , wherein the wafer further comprises a hard mask layer disposed on the layer of BTO, wherein the hard mask layer shields a portion of the layer of BTO from bombardment by the ionized gas.
5 . The method of claim 4 , wherein the hard mask comprises one of:
silicon dioxide (SiO 2 ); or
silicon nitride (Si 3 N 4 ).
6 . The method of claim 4 , wherein:
the wafer further comprises a substrate layer disposed on a side of the layer of BTO opposite the hard mask layer, and
chemically etching the wafer comprises completely etching through a portion of the layer of BTO until the substrate layer is exposed.
7 . The method of claim 6 , wherein the substrate layer comprises one of:
silicon dioxide (SiO 2 ); or
silicon nitride (Si 3 N 4 ).
8 . The method of claim 1 , wherein the gas further comprises oxygen gas (O 2 ).
9 . The method of claim 1 , wherein the gas further comprises argon (Ar).
10 . The method of claim 1 , wherein the layer of BTO comprises a waveguide layer of the electro-optic device.
11 . The method of claim 10 , wherein the layer of BTO comprises a slab/ridge waveguide layer and the electro-optic device comprises a Mach-Zehnder interferometer.