Multiple particle beam microscope and associated method with fast autofocus around an adjustable working distance
A multiple particle beam microscope and an associated method can provide a fast autofocus around an adjustable working distance. A system can have one or more fast autofocus correction lenses for adapting, in high-frequency fashion, the focusing, the position, the landing angle and the rotation of individual particle beams upon incidence on a wafer surface during the wafer inspection. Fast autofocusing in the secondary path of the particle beam system can be implemented in analogous fashion. An additional increase in precision can be attained via fast aberration correction mechanism in the form of deflectors and/or stigmators.
1 . A multiple particle beam system, comprising:
a multi-beam particle generator configured to generate a first field of a multiplicity of charged first individual particle beams;
a first particle optical unit having a first particle optical beam path, the first particle optical unit configured to image the first individual particle beams onto a wafer surface in an object plane of the multiple particle beam system so that the first individual particle beams strike the wafer surface at incidence locations which define a second field;
a detection system comprising a multiplicity of detection regions defining a third field;
a second particle optical unit having a second particle optical beam path, the second particle optical unit configured to image second individual particle beams emanating from the incidence locations onto the detection regions of the detection system;
a magnetic and/or electrostatic objective lens configured to have the first and second individual particle beams pass therethrough;
a beam switch in the first particle optical beam path between the multi-beam particle generator and the objective lens, the beam switch in the second particle optical beam path between the objective lens and the detection system;
a sample stage configured to hold and/or position a wafer during the wafer inspection;
an autofocus determining element configured to generate data to determine actual autofocus data during use of the multiple particle beam system to inspect the wafer;
a fast autofocus correction lens; and
a controller configured to control particle optical components in the first particle optical beam path and/or in the second particle optical beam path,
wherein:
the controller is configured for static or low-frequency adaptation of a focusing to control at least the objective lens and/or an actuator of the sample stage at a first working point with a first working distance so the first individual particle beams are focused on the wafer surface situated at the first working distance;
the controller is configured for high-frequency adaptation of the focusing to generate an autofocus correction lens control signal based on the actual autofocus data at the first working point during use of the multiple particle beam system to inspect the wafer to control the fast autofocus correction lens during use of the multiple particle beam system to inspect the wafer at the first working point;
the first working point is defined by a landing angle of the first individual particle beams in the object plane and by a grid arrangement of the first individual particle beams in the object plane; and
the controller is configured to keep the landing angle and the grid arrangement substantially constant during the high-frequency adaptation at the first working point.
2 . The multiple particle beam system of claim 1 , wherein an adaptation time for the high-frequency adaptation is at least ten times less than the adaptation time TA for the low-frequency adaptation.
3 . The multiple particle beam system of claim 1 , wherein a stroke to set the working distance for the low-frequency or static adaptation is at least five times greater than a stroke for the high-frequency adaptation.
4 . The multiple particle beam system of claim 1 , wherein:
a second working point is defined at least by a second working distance between the objective lens and the wafer surface;
the second working distance differs from the first working distance;
the controller is configured to perform a low-frequency adaptation when there is a change between the first working point and the second working point; and
the controller is configured to control at least the magnetic objective lens and/or an actuator of the sample stage at the second working point so that the first individual particle beams are focused on the wafer surface situated at the second working distance.
5 . The multiple particle beam system of claim 4 , wherein:
the second working point is defined by a landing angle of the first individual particle beams in the object plane and by a grid arrangement of the first individual particle beams in the object plane; and
the controller is configured to keep the landing angle and the grid arrangement substantially constant during the high-frequency adaptation at the second working point.
6 . The multiple particle beam system of claim 1 , wherein the fast autofocus correction lens comprises a fast electrostatic lens.
7 . The multiple particle beam system of claim 6 , wherein the fast autofocus correction lens is a first fast autofocus lens between upper and lower pole shoes of the magnetic objective lens.
8 . The multiple particle beam system of claim 7 , wherein the first fast autofocus correction lens is integrated into a beam tube extension which protrudes into the objective lens from a direction of the upper pole shoe.
9 . The multiple particle beam system of claim 8 , wherein the first fast autofocus correction lens comprises at least two parts.
10 . The multiple particle beam system of claim 9 , wherein:
the beam tube extension has two interruptions; and
one part of the two-parts is in each of the two interruptions, or each of two parts comprises a tube lens within the beam tube extension.
11 . The multiple particle beam system of claim 10 , wherein the controller is configured to control the two parts with voltages of the same or opposite signs via the autofocus correction lens control signal.
12 . The multiple particle beam system of claim 7 , further comprising:
a beam tube configured to be evacuated, the beam tube substantially enclosing the first particle optical beam path from the multi-beam particle generator to the objective lens; and
a field lens system comprising at least one magnetic field lens, the field lens system in the first particle optical beam path between the multi-beam particle generator and the beam switch; and
a second fast autofocus correction lens comprising a fast electrostatic lens,
wherein:
the second autofocus correction lens is configured to be within a magnetic field of the field lens system during use of the multiple particle beam system; and
the controller is configured to generate a second autofocus correction lens control signal based on the actual autofocus data of the multiple particle beam system to inspect the wafer to control the second fast autofocus correction lens in high-frequency fashion during use of the multiple particle beam system to inspect the wafer at the respective working point.
13 . The multiple particle beam system of claim 7 , further comprising a second fast autofocus correction lens, wherein:
the second fast autofocus correction lens comprises a fast magnetic lens outside and around the beam tube in the first particle optical beam path and in a position that is substantially magnetic field-free; and
the controller is configured to generate a third autofocus correction lens control signal based on the actual autofocus data during use of the multiple particle beam system to inspect the wafer to control the third fast autofocus correction lens in high-frequency fashion during use of the multiple particle beam system to inspect the wafer at the respective working point.
14 . The multiple particle beam system of claim 1 , further comprising a second fast autofocus correction lens, which comprises a fast electrostatic lens, wherein the second fast autofocus correction lens is at the multi-beam particle generator, and the controller is configured to generate a second autofocus correction lens control signal based on the actual autofocus data during use of the multiple particle beam system to inspect the wafer to control the second fast autofocus correction lens in high-frequency fashion during use of the multiple particle beam system to inspect the wafer at the respective working point.
15 . The multiple particle beam system of claim 1 , further comprising a second fast autofocus correction lens comprising a fast electrostatic lens, wherein:
the second fast autofocus correction lens is in the vicinity of an intermediate image plane as a two-part lens, the first part of which is upstream of the intermediate image plane and the second part of which is downstream of the intermediate image plane, as viewed in a direction of the particle optical beam path; and
the controller is configured to generate a second autofocus correction lens control signal based on the actual autofocus data the second fast autofocus correction lens to control the second fast autofocus correction lens in high-frequency fashion at the first respective working point.
16 . The multiple particle beam system of claim 1 , furthermore comprising a magnetic field compensation lens comprising a magnetic lens, wherein the magnetic field compensation lens is between the objective lens and the object plane, and the controller is configured to control the magnetic field compensation lens with a magnetic field compensation control signal in static or low-frequency fashion so that the magnetic field in the object plane takes the value of zero.
17 . A method, comprising:
providing a multiple particle beam system comprising:
a multi-beam particle generator configured to generate a first field of a multiplicity of charged first individual particle beams;
a first particle optical unit having a first particle optical beam path, the first particle optical unit configured to image the first individual particle beams onto a wafer surface in an object plane of the multiple particle beam system so that the first individual particle beams strike the wafer surface at incidence locations which define a second field;
a detection system comprising a multiplicity of detection regions defining a third field;
a second particle optical unit having a second particle optical beam path, the second particle optical unit configured to image second individual particle beams emanating from the incidence locations onto the detection regions of the detection system;
a magnetic and/or electrostatic objective lens configured to have the first and second individual particle beams pass therethrough;
a beam switch in the first particle optical beam path between the multi-beam particle generator and the objective lens, the beam switch in the second particle optical beam path between the objective lens and the detection system;
a sample stage configured to hold and/or position a wafer during the wafer inspection;
an autofocus determining element configured to generate measurement data to determine actual autofocus data during use of the multiple particle beam system to inspect the wafer;
a fast autofocus correction lens; and
a controller configured to control particle optical components in the first particle optical beam path and/or in the second particle optical beam path,
wherein:
the controller is configured for static or low-frequency adaptation of a focusing to control at least the objective lens and/or an actuator of the sample stage at a first working point with a first working distance so the first individual particle beams are focused on the wafer surface situated at the first working distance;
the controller is configured for high-frequency adaptation of the focusing to generate an autofocus correction lens control signal based on the actual autofocus data at the first working point during use of the multiple particle beam system to inspect the wafer to control the fast autofocus correction lens during use of the multiple particle beam system to inspect the wafer at the first working point;
the first working point is defined by a landing angle of the first individual particle beams in the object plane and by a grid arrangement of the first individual particle beams in the object plane; and
the controller is configured to keep the landing angle and the grid arrangement substantially constant during the high-frequency adaptation at the first working point;
generating the measurement data at the first working point for a current focus in the object plane;
determining the actual autofocus data based on the measurement data;
determining the autofocus correction lens control signal based on the actual autofocus data; and
controlling the first fast autofocus correction lens such that a focusing in the object plane is kept constant at the first working point in a high-frequency fashion,
wherein the landing angle and the grid arrangement of first individual particle beams in the object plane are also kept constant at the first working point.
18 . The multiple particle beam system of claim 16 , wherein the fast autofocus lens is a first fast autofocus correction lens comprising a two-part fast electrostatic lens arranged between the upper and the lower pole shoe of the magnetic objective lens, and wherein the multiple particle beam system further comprises:
a second fast autofocus correction lens comprising a fast electrostatic lens arranged within a magnetic field of a magnetic lens of a field lens system, the field lens system disposed in the first particle optical beam path between the multi-beam particle generator and the beam switch; and
a third fast autofocus correction lens comprising an electrostatic lens disposed at the multi-beam particle generator,
wherein the controller is configured so that, during use of the multiple particle beam system in a wafer inspection, the controller generates:
a first autofocus correction lens control signal based on the actual autofocus data to control the two-part fast electrostatic lens via the first autofocus correction lens control signal with voltages of different signs during the wafer inspection at the first working point;
a second autofocus correction lens control signal based on the actual autofocus data to control the second fast autofocus correction lens in high-frequency fashion during the wafer inspection at the first working point; and
a third autofocus correction lens control signal based on the actual autofocus data to control the third fast autofocus correction lens in high-frequency fashion during the wafer inspection at the first working point.
19 . The multiple particle beam system of claim 16 , wherein the fast autofocus correction lens is a first fast autofocus correction lens comprising a one-part embodiment and arranged between the upper and the lower pole shoe of the magnetic objective lens, and wherein the multiple particle beam system further comprises:
a second fast autofocus correction lens comprising a fast magnetic lens disposed outside and around a beam tube in the first particle optical beam path and disposed at a position that is substantially magnetic field free;
a third fast autofocus correction lens comprising an electrostatic lens disposed within a magnetic field of a magnetic lens of a field lens system, the field lens system disposed in the first particle optical beam path between the multi-beam particle generator and the beam switch; and
a fourth fast autocorrection lens disposed at the multi-beam particle generator,
wherein the controller is configured so that, during use of the multiple particle beam system in a wafer inspection, the controller generates:
a first autofocus correction lens control signal based on the actual autofocus data to control the first fast electrostatic lens via the first autofocus correction lens control signal in a high frequency fashion during the wafer inspection at the first working point;
a second autofocus correction lens control signal based on the actual autofocus data to control the second fast autofocus correction lens in high-frequency fashion during the wafer inspection at the first working point;
a third autofocus correction lens control signal based on the actual autofocus data to control the third fast autofocus correction lens in high-frequency fashion during the wafer inspection at the first working point; and
a fourth autofocus correction lens control signal on the basis of the actual autofocus data to control the fourth fast autofocus correction lens in high-frequency fashion during the wafer inspection at the first working point.
20 . One or more machine-readable hardware storage devices comprising instructions that are executable by one or more processing devices to perform operations comprising the method of claim 17 .
21 . A system comprising:
one or more processing devices; and
one or more machine-readable hardware storage devices comprising instructions that are executable by the one or more processing devices to perform operations comprising the method of claim 17 .