IP Library › Granted Patent US 12,494,383
Granted Patent B2
US 12,494,383 · App. 18/279,712 · Granted Dec 9, 2025

Gas supply device and semiconductor manufacturing apparatus

Inventors: Jun Hirose (Miyagi, JP); Atsushi Sawachi (Miyagi, JP); Takahiro Matsuda (Osaka, JP); Kazunari Watanabe (Osaka, JP); Kohei Shigyou (Osaka, JP); Taiki Hoshiko (Osaka, JP)
Assignees: TOKYO ELECTRON LIMITED; FUJIKIN INCORPORATED
H01L21/67017H01L21/02C23C16/45561Y02E60/50
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,494,383
App. No.
18/279,712
Granted
Dec 9, 2025
Kind
B2
Abstract

A gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.

Claims (17)

1 . A gas supply device comprising:

a plurality of fluid control units each including a flow path through which a gas flows from an upstream side to a downstream side, and a fluid control device which is provided in the middle of the flow path and controls a flow of gas flowing through the flow path;

a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units, and a single gas outlet portion that leads out the gas introduced through the plurality of connecting portions;

wherein the plurality of flow paths is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more of the fluid control units are fluidly connected to each of the plurality of connecting portions, and

wherein the merging flow path has open-close valves provided in the vicinities of both sides of the gas outlet portion, respectively, and is configured so that the upstream side of each open-close valve can be isolated from other portions.

2 . The gas supply device according to claim 1 , wherein the plurality of connecting portions is provided in the same plural number on one side and the other side of the gas outlet portion, respectively, in flow path direction of the merging flow path.

3 . A semiconductor manufacturing apparatus using the gas supply device as defined in claim 1 for controlling supply of a process gas in a manufacturing process of a semiconductor device, that requires a process step by the process gas in a sealed processing chamber.

4 . A gas supply device comprising:

a plurality of fluid control units each including a flow path through which gas flows from an upstream side to a downstream side, and a fluid control device which is provided in the middle of the flow path and controls a flow of gas flowing through the flow path;

a connecting flow path that is fluidly connected to the plurality of fluid control units, introduces a gas discharged from the plurality of fluid control units, merges the gas in a tournament shape, and discharges the gas to the outside; and

the connecting flow path comprising:

2 N of first stage partial flow paths (N is an integer equal to or greater than 2) each having an inlet connectable to the fluid control unit;

k-th stage partial flow paths each formed by merging two k-1 stage partial flow paths (k is an integer from 2 to N);

a (N+1)-th stage partial flow path formed by merging the N-th stage partial flow paths and having an outlet for outputting the gases to the outside;

wherein flow path lengths or internal volumes of flow paths from the inlets to the outlet of the connecting flow path are equal to or substantially equal to each other, and

wherein the connecting flow path has open-close valves provided in the vicinities of respective upstream sides of a point where two of the k-th stage partial flow paths (k is an integer of 1 to) merge, and is configured to isolate the upstream sides of the valves from other portions.

5 . The gas supply device according to claim 4 , wherein one or a plurality of the fluid control units are directly connected to the respective gas inlet ports of the connecting flow path, or the plurality of the fluid control units are connected via a merging pipe that fluidly connects downstream sides of the fluid control units to each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2023
From: HIROSE, JUN; SAWACHI, ATSUSHI; MATSUDA, TAKAHIRO; WATANABE, KAZUNARI; SHIGYOU, KOHEI; HOSHIKO, TAIKI
To: TOKYO ELECTRON LIMITED; FUJIKIN INCORPORATED
Reel/Frame 065765/0777 →
Priority Claims (1)
JP 2021-045537 · Mar 19, 2021 · national
Continuity (1)
Related Publication 20240242976A1 · Jul 18, 2024
References Cited (12)
US 5470390A · Nishikawa · 1995 [cited by examiner]
US 6071349A · Kurosawa · 2000 [cited by examiner]
US 10022689B2 · Shareef et al. · 2018 [cited by applicant]
US 20090320754A1 · Oya et al. · 2009 [cited by applicant]
JP 1028855 · 1998 [cited by applicant]
JP 2988949B2 · 1999 [cited by examiner]
JP 5037510 · 2012 [cited by applicant]
JP 201888336 · 2018 [cited by applicant]
JP 201898387 · 2018 [cited by applicant]
JP 2019152234 · 2019 [cited by applicant]
WO 2008023711A1 · 2008 [cited by applicant]
International Search Report Issued in International Patent Application No. PCT/JP2022/009314, dated May 24, 2022, along with an English translation thereof. [cited by applicant]