IP Library › Granted Patent US 12,494,781
Granted Patent B2
US 12,494,781 · App. 18/413,737 · Granted Dec 9, 2025

Semiconductor relay device

Inventors: Naoya Takai (Yukuhashi Fukuoka, JP); Yukihiro Takifuji (Chikujo Fukuoka, JP); Keita Saito (Buzen Fukuoka, JP); Kazuki Tanaka (Kitakyushu Fukuoka, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation
H03K17/6874H03K17/08108H03K17/73H03K17/08
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Quick Facts
Patent No.
US 12,494,781
App. No.
18/413,737
Granted
Dec 9, 2025
Kind
B2
Abstract

A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.

Claims (18)

1 . A semiconductor relay device comprising:

a conversion circuit configured to receive an input signal from outside, and pass a first current to a first node based on the input signal;

an overheat protection circuit provided between the first node and a second node and configured to short the first node to the second node while a temperature in the semiconductor relay device is higher than a predetermined temperature; and

a transistor having a gate coupled to the first node, wherein

the overheat protection circuit includes:

a zener diode having an anode coupled to the second node and a cathode coupled to the first node;

a resistor coupled between the second node and a third node;

a number n of diodes that are serially coupled, wherein an anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to the third node, where n is a natural number larger than or equal to 2; and

a thyristor having an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node.

2 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein:

the transmission circuit is a light emitting diode, and

the conversion circuit includes a photodiode.

3 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein:

the input signal is a magnetic signal generated from a coil included in the transmission circuit, and

the conversion circuit includes a coil detecting the input signal.

4 . The semiconductor relay device according to claim 1 , further comprising a transmission circuit configured to output the input signal, wherein:

the transmission circuit connected to the conversion circuit via a capacitor, and

the input signal is an electric signal generated from the transmission circuit and transmitted to the conversion circuit via the capacitor.

Priority Claims (1)
JP 2021-048949 · Mar 23, 2021 · national
Continuity (3)
Division 17902737 · Sep 2, 2022
Continuation 17473889 · Sep 13, 2021
Related Publication 20240154613A1 · May 9, 2024
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