Ion implantation system and method for implanting aluminum using non-fluorine-containing halide species or molecules
An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.
1 . A method for forming an aluminum ion beam, the method comprising:
providing an aluminum-containing species in a gaseous form in an ion source;
introducing one or more of a halide species and a halide molecule to the ion source, wherein the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine;
reacting the one or more of the halide species and the halide molecule with the aluminum-containing species to generate an aluminum-halide vapor, and further etching and/or cleaning the ion source with the one or more of the halide species and the halide molecule; and
generating the aluminum ion beam from at least the aluminum-halide vapor.
2 . The method of claim 1 , wherein the halide molecule comprises one or more of Cl 2 , CCl 4 , BCl 3 , Br 2 , I 2 , HCl, HBr, HI, CHCl 3 , CBr 4 , ChBr 3 , CH x I y .
3 . The method of claim 1 , wherein the aluminum-containing species comprises one or more of atomic aluminum, AlN, Al 2 O 3 , and Al 4 C 3 .
4 . The method of claim 1 , wherein the one or more of the halide species and the halide molecule is introduced as a gas in a vicinity of one or more arc chamber components.
5 . The method of claim 4 , wherein the one or more arc chamber components comprise one or more of a cathode shield, an electrode, a repeller, a sidewall associated with the arc chamber, and a sidewall component operably coupled to the sidewall.
6 . The method of claim 4 , wherein the one or more arc chamber components are heated concurrent with the generation of the aluminum ion beam.
7 . The method of claim 6 , wherein the one or more arc chamber components are heated by the generation of the aluminum ion beam and/or by an auxiliary heat source.
8 . The method of claim 1 , wherein the ion source comprises an arc chamber that is at least partially enclosed by an ion source housing, and wherein the one or more of the halide species and the halide molecule is introduced as a gas within the ion source housing.
9 . The method of claim 8 , wherein the one or more of the halide species and the halide molecule is introduced to the ion source via a gas ring at least partially surrounding the arc chamber.
10 . The method of claim 8 , wherein the ion source comprises an extraction electrode disposed within the ion source housing, and wherein the one or more of the halide species and the halide molecule clean a surface of the extraction electrode.
11 . The method of claim 1 , wherein the aluminum-containing species comprises gaseous dimethylaluminum chloride (DMAC) or trimethylaluminum (TMA).
12 . The method in claim 11 , wherein the gaseous DMAC or TMA is mixed with the one or more of the halide species and the halide molecule in a common gas channel prior to being provided to an ion source housing or an arc chamber plasma cavity of the ion source.
13 . The method of claim 1 , further comprising heating the aluminum-containing species external to the ion source prior to providing the aluminum-containing species in the ion source, wherein the one or more of the halide species and the halide molecule are introduced to an arc chamber of the ion source after passing over the aluminum-containing species, thereby defining the aluminum-halide vapor.
14 . A method for forming an aluminum ion beam, the method comprising:
providing an aluminum-containing species to an ion source in a gaseous form;
introducing one or more of a halide species and a halide molecule to the ion source, wherein the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and wherein the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine;
reacting the one or more of the halide species and the halide molecule with the aluminum-containing species to generate an aluminum-halide vapor; and
generating the aluminum ion beam from at least the aluminum-halide vapor, wherein the ion source is further at least partially cleaned by the one or more of the halide species and the halide molecule.
15 . The method of claim 14 , wherein the aluminum-containing species comprises gaseous dimethylaluminum chloride (DMAC) or trimethylaluminum (TMA).
16 . The method in claim 15 , wherein the gaseous DMAC or TMA is mixed with the one or more of the halide species and the halide molecule in a common gas channel prior to being provided to an ion source housing or an arc chamber plasma cavity of the ion source.