Integrated circuit, semiconductor device having stop segment in connection region between logic region and memory cell region
Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.
1 . A semiconductor device, comprising:
a gate electrode within a first dielectric layer that overlies a substrate;
a gate dielectric layer over the gate electrode;
a channel layer on the gate dielectric layer;
an insulating layer over the channel layer;
a first source/drain electrode and a second source/drain electrode in the insulating layer, and connected to the channel layer;
a second dielectric layer beside one of the first source/drain electrode and the second source/drain electrode; and
a stop segment embedded in the second dielectric layer within a second region between a first region and a third region of the substrate,
wherein the first region comprises a logic region, the third region comprises a memory cell region, and the second region comprises a connection region connected to the logic region and the memory cell region.
2 . The semiconductor device of claim 1 , wherein the stop segment comprises amorphous silicon, SiN, SiC, SiCN, SiCON or a combination thereof.
3 . The semiconductor device of claim 1 , wherein the stop segment is located on a inclined sidewall of the insulating layer.
4 . The semiconductor device of claim 1 , further comprising:
a cap layer on the channel layer;
an intermediate layer between the cap layer and the insulating layer; and
a liner layer between the cap layer and the intermediate layer.
5 . The semiconductor device of claim 4 , wherein the intermediate layer comprises aluminum oxide, titanium oxide or a combination thereof.
6 . The semiconductor device of claim 4 , wherein the stop segment has a bottom higher than a top surface of the cap layer.
7 . The semiconductor device of claim 1 , wherein an extension direction of the stop segment forms an acute angle with a top surface of the substrate.
8 . The semiconductor device of claim 1 , wherein a bottom of the stop segment is between a top of the first source/drain electrode and a bottom of the first source/drain electrode.
9 . An integrated circuit, comprising:
a substrate comprising a memory cell region, a logic region, and a connection region, wherein the connection region is connected to the memory cell region and the logic region;
an interconnection layer disposed on the substrate, wherein the interconnection layer comprises a plurality of dielectric layers and a plurality of conductive layers alternately stacked up along a build-up direction;
a plurality of transistors located between the plurality of dielectric layers in the memory cell region; and
a stop segment embedded in the plurality of dielectric layers in the connection region,
wherein the stop segment is adjacent to an edge transistor of the plurality of the transistors, and the edge transistor is adjacent to the connection region,
wherein an extension direction of the stop segment forms an acute angle with a top surface of the substrate.
10 . The integrated circuit of claim 9 , wherein the stop segment is laterally aside a source/drain electrode of the edge transistor.
11 . The integrated circuit of claim 10 , wherein a top surface of the stop segment is coplanar with a top surface of the source/drain electrode of the edge transistor, and a bottom of the stop segment is higher than a bottom of the source/drain electrode of the edge transistor.
12 . The integrated circuit of claim 9 , wherein sidewalls and the bottom of the stop segment are enclosed by the plurality of dielectric layers and a top surface of the stop segment is coplanar with a top surface of one of the plurality of dielectric layers.
13 . The integrated circuit of claim 9 , wherein the plurality of dielectric layers in logic region is free of the stop segment.
14 . A semiconductor device, comprising:
a gate electrode within a first dielectric layer that overlies a substrate;
a gate dielectric layer over the gate electrode;
a channel layer on the gate dielectric layer;
an insulating layer over the channel layer;
a first source/drain electrode and a second source/drain electrode in the insulating layer, and connected to the channel layer;
a second dielectric layer beside one of the first source/drain electrode and the second source/drain electrode; and
a stop segment embedded in the second dielectric layer, wherein the stop segment comprises amorphous silicon, SiN, SiC, SiCN, SiCON or a combination thereof.
15 . The semiconductor device of claim 14 , wherein the stop segment is located on a inclined sidewall of the insulating layer.
16 . The semiconductor device of claim 14 , wherein the stop segment is within a second region in the substrate between a first region and a third region of the substrate.
17 . The semiconductor device of claim 16 , wherein the first region comprises a logic region, the third region comprises a memory cell region, and the second region comprises a connection region connected to the logic region and the memory cell region.
18 . The semiconductor device of claim 14 , further comprising:
a cap layer on the channel layer;
an intermediate layer between the cap layer and the insulating layer; and
a liner layer between the cap layer and the intermediate layer.
19 . The semiconductor device of claim 18 , wherein the intermediate layer comprises aluminum oxide, titanium oxide or a combination thereof.
20 . The semiconductor device of claim 18 , wherein the stop segment has a bottom higher than a top surface of the cap layer.