Vertically spaced intra-level interconnect line metallization for integrated circuit devices
An integrated circuit interconnect level including a lower metallization line vertically spaced from upper metallization lines. Lower metallization lines may be self-aligned to upper metallization lines enabling increased metallization line width without sacrificing line density for a given interconnect level. Combinations of upper and lower metallization lines within an interconnect metallization level may be designed to control intra-layer resistance/capacitance of integrated circuit interconnect. Dielectric material between two adjacent co-planar metallization lines may be recessed or deposited selectively to the metallization lines. Supplemental metallization may then be deposited and planarized. A top surface of the supplemental metallization may either be recessed to form lower metallization lines between upper metallization lines, or planarized with dielectric material to form upper metallization lines between lower metallization lines. Vias to upper and lower metallization line may extend another metallization level.
1 . An integrated circuit (IC) interconnect structure, comprising:
a first interconnect level comprising:
a first metallization line adjacent to a second metallization line;
a third metallization line between the first and second metallization lines and out of a plane of the first and second metallization lines; and
via metallization coupling each of the first, second and third metallization lines to at least one of a second interconnect level below the first interconnect level or a third interconnect level above the first interconnect level.
2 . The IC interconnect structure of claim 1 , wherein a bottom surface of the first metallization line is coplanar with a bottom surface of the second metallization line.
3 . The IC interconnect structure of claim 2 , wherein a top surface of the third metallization line is below bottom surface of the first and second metallization lines.
4 . The IC interconnect structure of claim 1 , wherein the third metallization line has a centerline coincident with a centerline of a space between the first and second metallization lines.
5 . The IC interconnect structure of claim 1 , wherein:
the first and second metallization lines have a first metal composition; and
the third metallization line has a second metal composition, different than the first.
6 . The IC interconnect structure of claim 5 , wherein the first metal composition comprises predominantly one of Cu, Ru, W, Mo, Co, or Al, and the second metal composition comprises predominantly one of Cu, Ru, W, Mo, Co, or Al.
7 . The IC interconnect structure of claim 1 , wherein the via metallization couples the first and second metallization lines to the third interconnect level and couples the third metallization line to the second interconnect level.
8 . The IC interconnect structure of claim 1 , wherein the via metallization couples the first, second, and third metallization lines to the third interconnect level.
9 . The IC interconnect structure of claim 1 , wherein:
the via metallization comprises:
a first via metallization in contact with the first metallization line; and
a second via metallization in contact with the third metallization line; and
the first via metallization has a diameter smaller than the width of the first metallization line, or the second via metallization has a diameter smaller than a width of the third metallization line.
10 . The IC interconnect structure of claim 9 , wherein:
the first via metallization has a minimum diameter larger than a minimum diameter of the second via metallization.
11 . An apparatus, comprising:
a plurality of transistors comprising one or more semiconductor materials; and
a plurality of interconnect levels over the transistors, wherein the interconnect levels further comprise:
a first interconnect level comprising:
a first metallization line adjacent to a second metallization line;
a third metallization line out of a plane of the first and second metallization lines; and
a second interconnect level above or below the first interconnect level, the second interconnect level comprising one or more metallization lines interconnected to one or more of the first, second, or third metallization lines by via metallization.
12 . The apparatus of claim 11 , wherein the third metallization line has a centerline coincident with a centerline of a space between the first and second metallization lines.
13 . The apparatus of claim 11 , wherein a bottom surface of the first metallization line is co-planar with a bottom surface of the second metallization line.
14 . The apparatus of claim 11 , wherein a top surface of the third metallization line is below bottom surfaces of the first and second metallization lines.
15 . The apparatus of claim 11 , wherein:
the first and second metallization lines have a first metal composition; and
the third metallization line has a second metal composition, different than the first.
16 . The apparatus of claim 15 , wherein the first metal composition comprises predominantly one of Cu, Ru, W, Mo, Co, or Al, and the second metal composition comprises predominantly one of Cu, Ru, W, Mo, Co, or Al.
17 . An apparatus comprising:
a plurality of transistors; and
an interconnect structure coupling the transistors into an integrated circuit, wherein the interconnect structure comprises:
a first interconnect line level between second and third interconnect line levels, the first interconnect line level comprising a pair of first interconnect lines proximal to the second interconnect line level and a second interconnect line laterally between the pair of first interconnect lines and proximal to the third interconnect line level; and
a plurality of vias interconnecting each of the first and second interconnect lines to interconnect lines in the second or third interconnect line levels.
18 . The apparatus of claim 17 , wherein the pair of first interconnect lines have a first metal composition, and the second interconnect line has a second metal composition, different than the first.
19 . The apparatus of claim 18 , wherein the first metal composition comprises predominantly one of Cu, Ru, W, Mo, Co, or Al, and the second metal composition comprises predominantly one of Cu, Ru, W, Mo, Co, or Al.
20 . The apparatus of claim 17 , wherein the second interconnect line has a centerline coincident with a centerline of a space between the pair of first interconnect lines.