IP Library › Granted Patent US 12,511,728
Granted Patent B2
US 12,511,728 · App. 17/429,443 · Granted Dec 30, 2025

Method for autonomously applying a dangling bond pattern to a substrate

Inventors: Mohammad Rashidi (Edmonton, CA); Jeremiah Croshaw (Edmonton, CA); Robert Wolkow (Edmonton, CA)
Assignee: Quantum Silicon Inc.
G06T7/0008G01Q30/04G01Q60/10G06T2207/10061G06T2207/20081G06T2207/20084G06T2207/30148
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Quick Facts
Patent No.
US 12,511,728
App. No.
17/429,443
Granted
Dec 30, 2025
Kind
B2
Abstract

A method for autonomously applying a dangling bond pattern to a substrate for atom scale device fabrication includes inputting the pattern, initiating a patterning process, scanning the substrate using a scanning probe microscope (SPM) to generate an SPM image of the substrate, feeding the SPM image into a trained convolution neural network (CNN), analyzing the SPM image using the CNN to identify substrate defects, determining a defect free substrate area for pattern application; and applying the pattern to the substrate in that area. An atom scale electronic component includes functional patches on a substrate and wires electrically connecting the functional patches. Training a CNN includes recording a Scanning Tunneling Microscope (STM) image of the substrate, extracting images of defects from the STM image, labeling pixel-wise the defect images, and feeding the extracted and labeled images of defects into a CNN to train the CNN for semantic segmentation.

Claims (13)

1 . A method for autonomously applying a dangling bond pattern to a substrate for atom scale device fabrication:

inputting the pattern to be applied to the substrate;

initiating a patterning process;

scanning the substrate using a scanning probe microscope (SPM) to generate an SPM image of the substrate;

feeding the SPM image into a trained convolution neural network (CNN) for semantic segmentation, wherein the CNN has been trained using images including a suitable region, a charged state defect region, and a neutral charge state defect region;

analyzing the SPM image using the CNN to identify defects on the substrate;

determining an area capable of supporting a pattern to be applied to the substrate as a suitable area on the substrate for application of the pattern; and

applying the pattern of dangling bonds to the substrate in the suitable area.

2 . The method of claim 1 wherein the substrate is hydrogen-terminated Si (100) surface.

3 . The method of claim 1 wherein the SPM image has a resolution of 10 pixels/nm.

4 . The method of claim 1 wherein identifying defects on the substrate includes characterizing defects on the substrate.

5 . The method of claim 1 wherein identifying defects on the substrate includes locating defects on the substrate.

6 . The method of claim 1 wherein analyzing the SPM image includes pixelating the image.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2021
From: RASHIDI, MOHAMMAD; CROSHAW, JEREMIAH; WOLKOW, ROBERT
To: QUANTUM SILICON INC.
Reel/Frame 057120/0070 →
Continuity (2)
Provisional Application 62806381 · Feb 15, 2019
Related Publication 20220130033A1 · Apr 28, 2022
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