One-time programmable memory device
An example one-time programmable (OTP) memory device is provided. The OTP memory device include a passivation layer. A top metal layer is positioned below the passivation layer. The top metal layer includes one or more holes configured to an etching medium to pass through the holes. An array of memory elements is positioned in a memory layer below the top metal layer. A first metal address line layer is positioned below the array of memory elements and includes a plurality of first address lines extending in a first direction. A first end of each memory element being connected to one of the plurality of first metal address lines. A second metal address line layer is positioned below the first metal address line layer and includes a plurality of second metal address lines extending in a second direction. The second direction is different than the first direction.
1 . A one-time programmable (OTP) memory device comprising:
a passivation layer;
a top metal layer positioned below the passivation layer, the top metal layer including one or more holes configured to pass an etching medium through the holes;
an array of memory elements positioned in a memory layer below the top metal layer;
a first metal address line layer positioned below the array of memory elements and including a plurality of first metal address lines extending in a first direction, a first end of each memory element being connected to one of the plurality of first metal address lines; and
a second metal address line layer positioned below the first metal address line layer and including a plurality of second metal address lines extending in a second direction, the second direction being different than the first direction, a second end of each of each memory element being connected to one of the plurality of second metal address lines;
wherein, in a first region of the device, the passivation layer, top metal layer, memory layer, first metal address line layer, and second metal address line layer are separated by a first portion of SiO 2 material; and
wherein, in a second region of the device, a second portion of the SiO 2 material has been removed between the passivation layer, top metal layer, and memory layer.
2 . The device of claim 1 , wherein the etching medium includes vapour HF (vHF).
3 . The device of claim 1 , wherein the second portion of the SiO2 material was removed by the etching medium.
4 . The device of claim 1 , wherein each of the memory elements is connected to a first metal address line using at least one via.
5 . The device of claim 4 , wherein each of the memory elements is connected to a second metal address line using at least one via.
6 . The device of claim 1 , wherein the first metal address line layer and the second metal address line layer are positioned at least one layer below the memory layer.
7 . The device of claim 6 , wherein the first metal address line layer and second metal address line layer are positioned at least two layers below the memory layer.
8 . A method for fabricating a one-time programmable (OTP) memory device comprising:
providing a passivation layer;
forming a top metal layer below the passivation layer, the top metal layer including one or more holes configured to pass an etching medium through the holes;
positioning an array of memory elements positioned in a memory layer below the top metal layer;
forming a first metal address line layer below the array of memory elements and including a plurality of first metal address lines extending in a first direction, a first end of each memory element being connected to one of the plurality of first metal address lines; and
forming a second metal address line layer positioned below the first metal address line layer and including a plurality of second metal address lines extending in a second direction, the second direction being different than the first direction, a second end of each of each memory element being connected to one of the plurality of second metal address lines;
wherein, in a first region of the device, the passivation layer, top metal layer, memory layer, first metal address line layer, and second metal address line layer are separated by a first portion of SiO 2 material; and
wherein, in a second region of the device, a second portion of the SiO 2 material has been removed between the passivation layer, top metal layer, and memory layer.
9 . The method of claim 8 , wherein the etching medium includes vapour HF (vHF).
10 . The method of claim 8 , further comprising removing, by the etching medium, the second portion of the SiO 2 material.
11 . The method of claim 8 , further comprising connecting each of the memory elements to a first metal address line using at least one via.
12 . The method of claim 11 , further comprising connecting, using at least one via, each of the memory elements is connected to a second metal address line.
13 . The method of claim 8 , further comprising positioning the first metal address line layer and the second metal address line layer at least one layer below the memory layer.
14 . The method of claim 13 , further comprising positioning the first metal address line layer and second metal address line layer at least two layers below the memory layer.
15 . A method for programming a one-time programmable (OTP) memory comprising:
configuring an OTP device, the OTP device comprising:
a passivation layer;
a top metal layer positioned below the passivation layer, the top metal layer including one or more holes configured to pass an etching medium through the holes;
an array of memory elements positioned in a memory layer below the top metal layer;
a first metal address line layer positioned below the array of memory elements and including a plurality of first metal address lines extending in a first direction, a first end of each memory element being connected to one of the plurality of first metal address lines; and
a second metal address line layer positioned below the first metal address line layer and including a plurality of second metal address lines extending in a second direction, the second direction being different than the first direction, a second end of each of each memory element being connected to one of the plurality of second metal address lines;
wherein, in a first region of the device, the passivation layer, top metal layer, memory layer, first metal address line layer, and second metal address line layer are separated by a first portion of SiO 2 material; and
wherein, in a second region of the device, a second portion of the SiO 2 material has been removed between the passivation layer, top metal layer, and memory; and
applying an electrical current through the one or more memory elements to break certain connections of the one or more memory elements with the first metal address lines or the second metal address lines to configure a memory element as a logic one or zero respectively.
16 . The method of claim 15 , wherein the etching medium includes vapour HF (vHF).
17 . The method of claim 15 , wherein the OTP memory device comprises the second portion of the SiO 2 material being removed by the etching medium.
18 . The method of claim 15 , wherein the OTP memory device comprises each of the memory elements connected to a first metal address line using at least one via.
19 . The method of claim 18 , wherein the OTP memory device comprises each of the memory elements connected to a second metal address line using at least one via.
20 . The method of claim 15 , wherein the OTP memory device comprises the first metal address line layer and the second metal address line layer positioned at least one layer below the memory layer.
21 . The method of claim 20 , wherein the OTP memory device comprises the first metal address line layer and second metal address line layer positioned at least two layers below the memory layer.
22 . A one-time programmable (OTP) memory device comprising:
a memory element positioned in a memory layer;
at least one memory address line positioned below the memory layer; and
a top metal layer positioned below a passivation layer, the top metal layer including one or more holes configured to pass an etching medium through the holes;
wherein, the memory element is not buried in a SiO 2 material while connections to the at least one memory address line are buried in the SiO 2 material; and
wherein the etching medium includes vapour HF (vHF).
23 . The OTP memory device of claim 22 , wherein the memory element is connected to a first address line using at least one via.
24 . The OTP memory device of claim 23 , wherein the memory element is connected to a second address line using at least one via.
25 . The OTP memory device of claim 22 , wherein the at least one memory address line is positioned on at least one first metal address line layer positioned at least one layer below the memory layer.
26 . The OTP memory device of claim 22 , wherein the memory element is positioned in the memory layer below the top metal layer.