Solid-state image sensor including light-splitting structure
A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor further includes a light-splitting structure disposed in the first color filter segment or the second color filter segment and a grid structure disposed between the first color filter segment and the second color filter segment. The light-splitting structure is separated from the grid structure.
1 . A solid-state image sensor, comprising:
photoelectric conversion elements, wherein the photoelectric conversion elements are divided into first photoelectric conversion elements and second photoelectric conversion elements;
a color filter layer disposed above the photoelectric conversion elements and having a first color filter segment and a second color filter segment adjacent to the first color filter segment, wherein the first color filter segment and the second color filter segment correspond to different colors, the first color filter segment corresponds to the first photoelectric conversion elements, and the second color filter segment corresponds to the second photoelectric conversion elements;
a light-splitting structure disposed in the first color filter segment or the second color filter segment;
a grid structure disposed between the first color filter segment and the second color filter segment, wherein the light-splitting structure is separated from the grid structure; and
an isolation structure disposed between the photoelectric conversion elements and having first isolation segments and second isolation segments,
wherein the first isolation segments are disposed between the first photoelectric conversion elements and the second photoelectric conversion elements, the second isolation segments are disposed between the first photoelectric conversion elements and between the second photoelectric conversion elements, the grid structure corresponds to the first isolation segments, and the light-splitting structure corresponds to at least one of the second isolation segments, and
wherein from a top view of the solid-state image sensor, the light-splitting structure is offset from a corresponding one of the second isolation segments by over 0 to 45 degrees.
2 . The solid-state image sensor as claimed in claim 1 , wherein the grid structure has a first shift with respect to the first isolation segments, and the light-splitting structure has a second shift with respect to a corresponding one of the second isolation segments.
3 . The solid-state image sensor as claimed in claim 2 , wherein the first shift is different from the second shift.
4 . The solid-state image sensor as claimed in claim 1 , wherein a height of the light-splitting structure is equal to or less than a height of the grid structure.
5 . The solid-state image sensor as claimed in claim 1 , wherein from a top view of the solid-state image sensor, a profile of the light-splitting structure is cross-shaped.
6 . The solid-state image sensor as claimed in claim 1 , wherein a ratio of a height of the light-splitting structure to a height of the color filter layer is between 0.3 and 0.9.
7 . The solid-state image sensor as claimed in claim 1 , wherein a refractive index of the light-splitting structure is between 1 and 1.45.
8 . The solid-state image sensor as claimed in claim 1 , wherein the light-splitting structure corresponds to two photoelectric conversion elements or four photoelectric conversion elements.
9 . The solid-state image sensor as claimed in claim 1 , further comprising:
an inner pillar disposed on a bottom of the light-splitting structure, wherein the inner pillar comprises nontransparent material.
10 . The solid-state image sensor as claimed in claim 9 , wherein a width of the inner pillar is between 50 nm and 100 nm, and a height of the inner pillar is less than 150 nm.
11 . The solid-state image sensor as claimed in claim 1 , further comprising:
an auxiliary light-splitting structure disposed on a bottom of the light-splitting structure.
12 . The solid-state image sensor as claimed in claim 11 , wherein the auxiliary light-splitting structure is further disposed on a bottom of the grid structure.
13 . The solid-state image sensor as claimed in claim 11 , wherein the auxiliary light-splitting structure comprises at least one material that is different from the light-splitting structure, and a refractive index of the auxiliary light-splitting structure is between 1 and 1.65.
14 . The solid-state image sensor as claimed in claim 11 , wherein a width of the auxiliary light-splitting structure is equal to or greater than a width of the light-splitting structure, and a height of the auxiliary light-splitting structure is between 50 nm and 350 nm.
15 . A solid-state image sensor, comprising:
photoelectric conversion elements;
a color filter layer disposed above the photoelectric conversion elements and having a first color filter segment and a second color filter segment adjacent to the first color filter segment, wherein the first color filter segment and the second color filter segment correspond to different colors;
a light-splitting structure disposed in the first color filter segment or the second color filter segment; and
a grid structure disposed between the first color filter segment and the second color filter segment, wherein the light-splitting structure is separated from the grid structure,
wherein the light-splitting structure has a first portion disposed on the center of the first color filter segment or the second color filter segment and a second portion disposed near at least one corner of the first color filter segment or the second color filter segment.