Microfluidic channels in a substrate with a surface covered by a layer stack
Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a semiconductor substrate including a trench and a layer stack on the semiconductor substrate. The layer stack includes a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench. The structure further comprises a third layer inside the opening in the layer stack. The third layer, which comprises a semiconductor material, obstructs the opening to define a cavity inside the trench.
1 . A structure comprising:
a semiconductor substrate including a trench;
a layer stack on the semiconductor substrate, the layer stack including a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench, and the first layer including a surface surrounding the opening; and
a third layer inside the opening in the layer stack, the third layer comprising a semiconductor material, the third layer is in direct contact with the surface of the first layer, and the third layer occluding the opening to define a cavity inside the trench.
2 . A structure comprising:
a semiconductor substrate including a trench;
a layer stack on the semiconductor substrate, the layer stack including a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench; and
a third layer inside the opening in the layer stack, the third layer comprising a semiconductor material, and the third layer occluding the opening to define a cavity inside the trench,
wherein the cavity has an inlet and an outlet, and the inlet and the outlet are each surrounded by a portion of the third layer.
3 . The structure of claim 1 wherein the trench includes a plurality of sidewalls in the semiconductor substrate, and further comprising:
a fourth layer on the plurality of sidewalls of the trench, the fourth layer comprising a dielectric material, and the fourth layer extending in a vertical direction to the layer stack.
4 . The structure of claim 1 wherein the semiconductor material of the third layer comprises silicon or silicon-germanium.
5 . The structure of claim 1 wherein the first layer comprises a single-crystal semiconductor material.
6 . The structure of claim 1 wherein the first layer comprises an amorphous semiconductor material.
7 . The structure of claim 1 wherein the first layer comprises silicon nitride.
8 . The structure of claim 1 wherein the layer stack fully surrounds the opening.
9 . The structure of claim 1 wherein the cavity includes a plurality of chambers.
10 . The structure of claim 1 wherein the layer stack includes a fourth layer on the first layer, the opening penetrates through the fourth layer, and the fourth layer comprises a dielectric material.
11 . The structure of claim 1 wherein the third layer extends in a vertical direction into a portion of the trench.
12 . The structure of claim 1 further comprising:
a field-effect transistor adjacent to the trench, the field-effect transistor including a gate positioned above the semiconductor substrate or above the first layer.
13 . The structure of claim 1 wherein the trench includes a first portion with a first geometrical shape and a second portion with a second geometrical shape that is different from the first geometrical shape.
14 . The structure of claim 13 wherein the second geometrical shape is cylindrical.
15 . The structure of claim 2 wherein the opening and the trench have a first end portion, a second end portion, and a central portion longitudinally between the first end portion and the second end portion, and the inlet is in the first end portion and the outlet is in the second end portion.
16 . The structure of claim 2 wherein the first layer includes a surface surrounding the opening, and the third layer is in direct contact with the surface of the first layer.
17 . The structure of claim 2 wherein the first layer comprises a single-crystal semiconductor material, an amorphous semiconductor material, or silicon nitride, and the semiconductor material of the third layer comprises silicon or silicon-germanium.
18 . A method comprising:
forming a trench in a semiconductor substrate;
forming a layer stack on the semiconductor substrate, wherein the layer stack includes a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench; and
forming a third layer inside the opening in the layer stack, wherein the third layer comprises a semiconductor material, and the third layer obstructs the opening to define a cavity inside the trench,
wherein the first layer includes a surface surrounding the opening, and the third layer is in direct contact with the surface of the first layer.
19 . The method of claim 18 wherein the third layer is formed by an epitaxial growth process nucleated by the first layer bordering the opening.
20 . The method of claim 18 further comprising:
forming an inlet and an outlet to the cavity.