Method of cleaning electrostatic chuck and method of manufacturing semiconductor device while exposing electrostatic chuck to plasma and introducing electron current
A cleaning method according to one aspect of the present disclosure which cleans an electrostatic chuck includes exposing the electrostatic chuck to plasma and maintaining a relationship between a potential of the electrostatic chuck and a potential of the plasma such that electron current is introduced from the plasma toward the electrostatic chuck.
1 . A cleaning method of cleaning an electrostatic chuck comprising:
exposing the electrostatic chuck to plasma and maintaining a relationship between a potential of the electrostatic chuck and a potential of the plasma such that an electron current is introduced from the plasma toward the electrostatic chuck,
wherein the plasma is formed between a pair of electrodes arranged to face each other,
wherein the pair of electrodes include a first electrode inside the electrostatic chuck and a second electrode facing the electrostatic chuck,
wherein a distance between the first electrode and the second electrode is 80 mm or less, and
wherein the exposing includes applying an anode voltage of 400 V to 600 V to the first electrode.
2 . The cleaning method of claim 1 , wherein the electrostatic chuck is of a Johnson-Rahbek type.
3 . The cleaning method of claim 2 , wherein radio frequency power is applied to the first electrode.
4 . The cleaning method of claim 3 , wherein the cleaning method is performed without a substrate on the electrostatic chuck.
5 . The cleaning method of claim 4 , wherein the electrostatic chuck is connected to a variable impedance device configured to adjust an impedance.
6 . The cleaning method of claim 5 , wherein the anode voltage is controlled based on the electron current introduced toward the electrostatic chuck.
7 . The cleaning method of claim 1 , wherein radio frequency power is applied to the first electrode.
8 . The cleaning method of claim 1 , wherein the cleaning method is performed without a substrate on the electrostatic chuck.
9 . The cleaning method of claim 1 , wherein the electrostatic chuck is connected to a variable impedance device configured to adjust an impedance.
10 . The cleaning method of claim 1 , wherein the anode voltage is controlled based on the electron current introduced toward the electrostatic chuck.
11 . A method of manufacturing a semiconductor device, the method comprising:
performing film formation while attracting and holding a substrate on an electrostatic chuck; and
exposing the electrostatic chuck to plasma without a substrate on the electrostatic chuck to clean the electrostatic chuck,
wherein the exposing includes maintaining a relationship between a potential of the electrostatic chuck and a potential of the plasma such that an electron current is introduced from the plasma toward the electrostatic chuck,
wherein the plasma is formed between a pair of electrodes arranged to face each other,
wherein the pair of electrodes include a first electrode inside the electrostatic chuck and a second electrode facing the electrostatic chuck,
wherein a distance between the first electrode and the second electrode is 80 mm or less, and
wherein the exposing includes applying an anode voltage of 400 V to 600 V to the first electrode.