Semiconductor devices and methods of manufacturing thereof
A method for fabricating semiconductor devices is disclosed. The method includes forming a gate trench over a semiconductor channel, the gate trench being surrounded by gate spacers. The method includes sequentially depositing a work function metal, a glue metal, and an electrode metal in the gate trench. The method includes etching respective portions of the electrode metal and the glue metal to form a gate electrode above a metal gate structure. The metal gate structure includes a remaining portion of the work function metal and the gate electrode includes a remaining portion of the electrode metal. The gate electrode has an upper surface extending away from a top surface of the metal gate structure.
1 . A semiconductor device, comprising:
a semiconductor fin;
gate spacers over the semiconductor fin;
a metal gate structure, over the semiconductor fin, that is sandwiched by the gate spacers; and
a gate electrode disposed above and in electrical contact with the metal gate structure;
wherein the gate electrode extends away from a top surface of the metal gate structure and a top surface of the gate spacers.
2 . The semiconductor device of claim 1 , wherein the gate electrode includes tungsten.
3 . The semiconductor device of claim 1 , further comprising a glue metal vertically disposed between a bottom surface of the gate electrode and the top surface of the metal gate structure.
4 . The semiconductor device of claim 3 , wherein the glue metal and the gate electrode have their respective sidewalls aligned with each other.
5 . The semiconductor device of claim 4 , wherein the respective sidewalls of the glue metal and the gate electrode are further aligned with inner sidewalls of the gate spacers.
6 . The semiconductor device of claim 3 , wherein the glue metal has a bottom surface positioned above the top surface of the gate spacers.
7 . The semiconductor device of claim 1 , further comprising a glue metal with its sidewalls and a bottom surface enclosed by the metal gate structure.
8 . The semiconductor device of claim 7 , wherein sidewalls of the glue metal are spaced from each other with a first distance and sidewalls of the gate electrode are spaced from each other with a second distance, and wherein the second distance is substantially similar to the first distance.
9 . The semiconductor device of claim 7 , wherein a top surface of the glue metal is positioned above the top surface of the metal gate structure.
10 . A semiconductor device, comprising:
a semiconductor channel;
gate spacers over the semiconductor channel;
a metal gate structure, over the semiconductor channel, that is in contact with the gate spacers; and
a gate electrode disposed above and in electrical contact with the metal gate structure;
wherein the gate electrode extends away from a top surface of the metal gate structure and a top surface of the gate spacers.
11 . The semiconductor device of claim 10 , wherein the gate electrode consists essentially of tungsten.
12 . The semiconductor device of claim 10 , further comprising a glue metal between a bottom surface of the gate electrode and the top surface of the metal gate structure.
13 . The semiconductor device of claim 12 , wherein the glue metal and the gate electrode have coplanar sidewalls.
14 . The semiconductor device of claim 13 , wherein the coplanar sidewalls are further aligned with inner sidewalls of the gate spacers.
15 . The semiconductor device of claim 12 , wherein the glue metal has a bottom surface extending above the top surface of the gate spacers.
16 . The semiconductor device of claim 10 , further comprising a glue metal with its sidewalls and a bottom surface enclosed by the metal gate structure.
17 . The semiconductor device of claim 16 , wherein sidewalls of the glue metal are spaced from each other with a first distance and sidewalls of the gate electrode are spaced from each other with a second distance, and wherein the second distance is substantially similar to the first distance.
18 . The semiconductor device of claim 16 , wherein a top surface of the glue metal is positioned above the top surface of the metal gate structure.
19 . The semiconductor device of claim 10 , wherein the semiconductor channel is a fin extending from a semiconductive substrate.
20 . A semiconductor device comprising:
gate spacers over a plurality of semiconductor fins;
a metal gate structure sandwiched by the gate spacers; and
a gate electrode disposed above and in electrical contact with the metal gate structure;
wherein the gate electrode extends away from a top surface of the metal gate structure and a top surface of the gate spacers.