IP Library Granted Patent US 12,532,600
Granted Patent B2
US 12,532,600 · App. 17/950,090 · Granted Jan 20, 2026

Nanomaterial, preparation method thereof, and quantum dot light-emitting diode

Inventors: Xingyuan Ma (Huizhou, CN); Wei Xu (Huizhou, CN); Jianxin Zhang (Huizhou, CN)
Assignee: TCL TECHNOLOGY GROUP CORPORATION
H10K50/115H10K50/15H10K85/00
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Quick Facts
Patent No.
US 12,532,600
App. No.
17/950,090
Granted
Jan 20, 2026
Kind
B2
Abstract

A nanomaterial includes a core and an outer shell. The core includes ZnO nanoparticles and a metal element doped in the ZnO nanoparticles. The outer shell includes a metal oxide.

Claims (45)

1 . A nanomaterial comprising:

a core including:

ZnO nanoparticles; and

a metal element doped in the ZnO nanoparticles; and

an outer shell including a metal oxide,

wherein the metal element doped in the ZnO nanoparticles includes at least one of Al, Li, Ca, Ga, or In.

2 . The nanomaterial according to claim 1 , wherein:

a metal element in the metal oxide includes at least one of Al, Mg, Li, Ca, Ga, or In.

3 . The nanomaterial according to claim 1 , wherein the metal element doped in the ZnO nanoparticles is the same as a metal element in the metal oxide.

4 . The nanomaterial according to claim 1 , wherein a ratio of a molar amount of the doped metal element to a total molar amount of the doped metal element and a zinc element ranges from 0.5% to 30%.

5 . The nanomaterial according to claim 1 , wherein a thickness of the outer shell ranges from 0.5 to 2 nm.

6 . The nanomaterial according to claim 1 , wherein the metal element doped in the ZnO nanoparticles and a metal element in the metal oxide are both Li.

7 . The nanomaterial according to claim 1 , wherein:

the core of the nanomaterial consists of the ZnO nanoparticles and the metal element doped in the ZnO nanoparticles; and

the outer shell of the nanomaterial includes the metal oxide.

8 . A preparation method of a nanomaterial comprising:

mixing a zinc salt and a salt of a to-be-doped metal element with an alkaline solution for a reaction to obtain ZnO nanoparticles doped with the metal element; and

using the ZnO nanoparticles doped with the metal element as a core and forming a metal oxide shell on a surface of the core to obtain the nanomaterial with a core-shell structure,

wherein the salt of the metal element that is to be doped includes at least one of Al salt, Li salt, Ca salt, Ga salt, or In salt;.

9 . The method according to claim 8 , wherein using the ZnO nanoparticles doped with the metal element as the core and forming the metal oxide shell on the surface of the core to obtain the nanomaterial with the core-shell structure includes:

adding a metal salt to a reaction system for obtaining the ZnO nanoparticles doped with the metal element, to obtain the metal oxide shell on the surface of the core of the ZnO nanoparticles doped with the metal element to obtain the nanomaterial with the core-shell structure.

10 . The method according to claim 8 , wherein:

the zinc salt includes at least one of zinc acetate, zinc nitrate, zinc chloride, zinc sulfate, or zinc acetate dihydrate; and/or

a metal element in the metal oxide includes at least one of Al, Mg, Li, Ca, Ga, or In; and/or

alkali in the alkaline solution includes at least one of potassium hydroxide, sodium hydroxide, or tetramethylammonium hydroxide.

11 . The method according to claim 8 , wherein the metal element doped in the ZnO nanoparticles is the same as a metal element in the metal oxide.

12 . The method according to claim 8 , wherein a ratio of a molar amount of the doped metal element to a total molar amount of the doped metal element and a zinc element ranges from 0.5% to 30%.

13 . The method according to claim 8 , wherein a thickness of the outer shell ranges from 0.5 to 2 nm.

14 . The method according to claim 8 , wherein the metal element doped in the ZnO nanoparticles and a metal element in the metal oxide are both Li.

15 . A quantum dot light-emitting diode comprising:

an anode and a cathode arranged oppositely to each other;

a quantum dot light-emitting layer arranged between the anode and the cathode; and

an electron transmission layer arranged between the cathode and the quantum dot light-emitting layer, wherein a material for forming the electron transmission layer includes a nanomaterial, the nanomaterial including:

a core including:

ZnO nanoparticles; and

a metal element doped in the ZnO nanoparticles; and

an outer shell including a metal oxide,

wherein the metal element doped in the ZnO nanoparticles includes at least one of Al, Li, Ca, Ga, or In.

16 . The quantum dot light-emitting diode according to claim 15 , wherein a material for forming the electron transmission layer is the nanomaterial.

17 . The quantum dot light-emitting diode according to claim 15 , further comprising:

a hole transmission layer arranged between the anode and the quantum dot light-emitting layer.

18 . The quantum dot light-emitting diode according to claim 15 , wherein a thickness of the electron transmission layer ranges from 20 to 60 nm.

19 . The method according to claim 1 , further comprising:

preparing the alkaline solution by dissolving an alkali in an organic solvent, the organic solvent being at least one of 2-methoxyethanol, methanol, ethanol, isopropanol, or dimethyl sulfoxide.

20 . The nanomaterial according to claim 1 , wherein the metal element doped in the ZnO nanoparticles is Li.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2022
From: MA, XINGYUAN; XU, WEI; ZHANG, JIANXIN
To: TCL TECHNOLOGY GROUP CORPORATION
Reel/Frame 061195/0407 →
Priority Claims (1)
CN 202010692288.9 · Jul 17, 2020 · national
Continuity (2)
Continuation PCTCN2020141155 · Dec 30, 2020
Related Publication 20230023531A1 · Jan 26, 2023
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